HY5117404B Search Results

HY5117404B

Contextual Info: HYM536A814B M-Series 8Mx36 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536A814B M-Series is a 4Mx36-bit Extended Data Out mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF

Contextual Info: HY5117404B,HY5116404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

Contextual Info: -HYUNDAI HYM536A814B M-Series 8M X 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A814B is a 8M x 36-bit EDO mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 iiF and 0.01 nFdecoupling capacitors are mounted

HYM532414BM

Abstract: HY5117404B
Contextual Info: HYM532414B M-Series 4Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414B M-Series is a 4Mx32-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF

Contextual Info: »HYUNDAI HYM532814B M-Series 8M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. O.lyF and 0.01 nF decoupling capacitors are

HYM532814BM

Abstract: HY5117404B HYM532814B
Contextual Info: HYM532814B M-Series 8Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532814B M-Series is a 8Mx32-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF

HY5117404B

Contextual Info: HYM536A414B M-Series 4Mx36 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536A414B M-Series is a 4Mx36-bit Extended Data Out mode CMOS DRAM module consisting of nine HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF

1MX16BIT

Abstract: 16MX1
Contextual Info: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE

BEDO RAM

Abstract: hy5118160b HY512264 HY5117404 HY5118164B
Contextual Info: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE

Contextual Info: •HYUNDAI H Y 5 1 1 7 4 0 4 B ,H Y 5 1 1 6 4 0 4 B 4Mx4, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration w ith Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process

IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Contextual Info: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.