36BIT Search Results

marking WMM

Abstract: RA52 1cas5 22r29
Contextual Info: 1 MEG x 4 DRAM DRAM QUAD CAS PARITY, FAST PAGE MODE FEATURES • Four independent CAS controls, allowing individual m anipulation to each of the four data In p u t/O u tp u t ports DQ1 through DQ4 . • Offers a single chip solution to byte level parity for 36bit w ords w hen using 1 Meg x 4 DRAMs for mem ory

HMD8M36M6

Abstract: HMD8M36M6G
Contextual Info: HANBit HMD8M36M6G 32Mbyte 8Mx36 72-pin SIMM FP with Parity Mode, 4K Ref. 5V Part No. HMD8M36M6, HMD8M36M6G GENERAL DESCRIPTION The HMD8M36M6 is a 8M x 36bit dynamic RAM high density memory module. The module consists of four CMOS 4M x 16 bit DRAMs in 50-pin TSOP packages and two CMOS 4M x 4bit Quad CAS DRAM in 28pin SOJ package mounted on a

Contextual Info: MT4C4004J 1 MEG X 4 DRAM M IC R O N DRAM 1 MEG x 4 DRAM FEATURES _ • Four independent CAS controls, allowing individual manipulation to each of the four data Input/Output ports DQ1 through DQ4 . • Offers a single chip solution to byte level parity for 36bit words when using 1 Meg x 4 DRAMs for memory

MB811

Abstract: TPC 8608
Contextual Info: November 1996 Revision 1.1 DATA SHEET FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. FSA4UN3644 supports 4K refresh. FSA4UN3642

dq35j

Abstract: Nippon capacitors
Contextual Info: MM2M0J32L / MM2M0J36L CMOS 2M x 32bit / 36bit Fast Page Mode Memory Module DESCRIPTION The MM1M0J32L/J36L is a 64 Megabit Dynamic Random Access Memory Module organized as 2,097,152 x 32 x 36 bits in a 72 lead single inline module. The module contains sixteen 1M x 4bit Dynamic Random Access

Nippon capacitors

Contextual Info: MM1M0J32L/MM1M0J36L CMOS 1Mx 32bit / 36bit Fast Page Mode Memory Module DESCRIPTION The MM1M0J32L/J36L is a 32 Megabit Dynamic Random Access Memory Module organized as 1,048,576 x 32 x 36 bits in a 72 lead single inline module. The module contains eight 1M x 4bit Dynamic Random Access

Contextual Info: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet FSA4UN364 2/4 B-60J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)B-60J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. FSA4UN3644B supports 4K refresh. FSA4UN3642B sup­

Contextual Info: MT4C4004J 1 MEG X 4 DRAM |U|IC=RON DRAM 1 MEG x 4 DRAM FEATURES _ • Four independent CAS controls, allowing individual manipulation to each of the four data input/output ports DQ1 through DQ4 . • Offers a single chip solution to byte level parity for 36bit words when using 1 Meg x 4 DRAMs for memory

T4C400

Abstract: mt4c4004jdj
Contextual Info: M T4C4004J 1 MEG X 4 DRAM l^ldRON DRAM 1 MEG x 4 DRAM QUAD CAS PARITY, FAST PAGE MODE FEATURES _ • Four independent C A S controls, allo w ing in d ivid u al m anipulation to each of the four data In p u t/O u tp ut ports DQ1 through DQ4 . • Offers a single chip solution to byte level parity for 36bit words w hen using 1 M eg x 4 D R A M s for m emory

MB811

Contextual Info: July 1997 Revision 1.0 data sheet FSA4UN364 2/4 B-60J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)B-60J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. FSA4UN3644B supports 4K refresh. FSA4UN3642B supports 2K refresh.

HMD8M36M18

Abstract: HMD8M36M18G
Contextual Info: HANBit HMD8M36M18G 32Mbyte 8Mx36 72-pin FP with Parity MODE 2K Ref. SIMM Design 5V Part No. HMD8M36M18, HMD8M36M18G GENERAL DESCRIPTION The HMD8M36M18G is a 8M x 36bit dynamic RAM high density memory module. The module consists of sixteen CMOS 4M x 4bit DRAM in 24-pin SOJ packages and two CMOS 4Mx 4bit Quad-CAS DRAM in 28pin SOJ packages

simm EDO 72pin

Abstract: HMD8M36M24EG edo dram 72-pin simm 4 m edo dram 50ns 72-pin simm ess u17
Contextual Info: HANBit HMD8M36M24EG 32Mbyte 8Mx36 72-pin EDO with Parity MODE 2K Ref. SIMM Design 5V Part No. HMD8M36M24EG GENERAL DESCRIPTION The HMD8M36M24EG is a 8M x 36bit dynamic RAM high density memory module. The module consists of twenty four CMOS 4M x 4bit DRAM in 24-pin SOJ packages mounted on a 72 -pin, double-sided, FR-4-printed circuit board.

pj 996

Abstract: Fujitsu IR c code
Contextual Info: <p Jun e l 996 Revision 1.0 HATA fíH F F T - FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. DM4M4N360 supports 4K refresh. DM4M2N360

application tca 780

Abstract: MH1M36EJ7
Contextual Info: MITSUBISHI LSIs M H 1 M 3 6 E J - 6 , - 7 , - 8 , - 1 37748736-BIT 1048576-WORD BY36-BIT DYNAMIC RAM DESCRIPTION The MH1M36EJ is 1048576word x 36bit dynamic RAM. This consists of four industry standard 1M x 1 dynamic RAMs in TSOP and eight industry standard 1M x 4 dynamic RAMs

Contextual Info: O K I semiconductor MSC2320A-XXYS9 262, 144 BY 36BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION The Oki MSC2320A-XXYS9 is a fully decoded, 262,144 words X 36 bit CMOS dynamic random access memory composed of eight 1 Mb DRAMs in SOJ MSM514256AJS and four 256 Kb drams in

Contextual Info: blE D • bEM^f i SS 0DE047Û ‘l ô T ■ MITI MITSUBISHILSIs MH1M36EJ-6,-7,-8,-10 MITSUBISHI M E M O R Y / A S I C 37748736- BIT(1048576- WORD BY 36- BlT)DYNAMIC RAM DESCRIPTION The MH1M36EJ is 1048576word x 36bit dynamic RAM. This consists of four industry standard 1M x 1 dynamic RAMs

Contextual Info: blE D • b 5 MSfl2 5 0 0 2 DSG1 OTE ■ M I T I MITSUBISHILSIs MH2M36EJ - 6, - 7, - 8, - 1 0 MITSUBISHI NEMORY/ASIC 75497472-BIT(2097152-WORD B Y 3 6 - BIT)DYNAMIC RAM DESCRIPTION The MH2M36EJ is 2097152 word x 36bit dynamic RAM. This consists of eight industry standard 1M x 1 dynamic

Contextual Info: MITSUBISHI LSIs M H 2 M 3 6 E J - 6 , - 7 , - 8 , - 1 75497472- BU 2097152- WORD BY36-B!T DYNAMIC RAM DESCRIPTION The MH2M 36EJ is 2 0 9 7 1 5 2 word x 36bit dynamic RAM. This consists of eight industry standard 1M x 1 PIN CONFIGURATIONfTOP VIEW ) dynamic

T4C4004JDJ

Abstract: marking W7F
Contextual Info: MT4C4004J 1 MEG X 4 DRAM I^ IIC R O N DRAM 1 MEG x 4 DRAM FEATURES _ PIN ASSIGNMENT Top View • Four independent CAS controls, allowing individual manipulation to each of the four data inpu t/output ports (DQ1 through DQ4). • Offers a single chip solution to byte level parity for 36bit words when using 1 M eg x 4 DRAMs for memory

54e4

Contextual Info: 4bE O K I D • b ? B 4 2 4 0 ÜÜÜTb' I S 1 ^ 7 « O K I J O K I SEMI CONDUCTOR GROUP semiconductor MSC2320A-XXYS9 r - v r - 2 3 262, 144 BY 36BIT DYNAM IC RAM MODULE GENERAL DESCRIPTION The Oki M SC 2320A-XXY S9 is a fu lly decoded, 2 6 2 ,1 4 4 w ords X 36 bit CMOS dynam ic random

TAA 840

Abstract: MSM51256
Contextual Info: 4bE O K I D • b ? B 4 2 4 0 ÜÜÜTb' I S 1 ^ 7 « O K I J O K I SEMI CONDUCTOR GROUP semiconductor MSC2320A-XXYS9 r - v r - 2 3 262, 144 BY 36BIT DYNAM IC RAM MODULE GENERAL DESCRIPTION The Oki M SC 2320A-XXY S9 is a fu lly decoded, 2 6 2 ,1 4 4 w ords X 36 bit CMOS dynam ic random

Contextual Info: TC55VDM536AFFN22/20/16/15 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 36M 3.3V Pipelined NtRAMTM 1M Word by 36Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55VDM536AFFN is a synchronous static random access memory SRAM organized as 1,048,576 words

Contextual Info: Preliminary Datasheet PD44164182B-A μPD44164362B-A 18M-BIT DDR II SRAM 2-WORD BURST OPERATION R10DS0014EJ0002 Rev.0.02 Aug 18, 2010 Description The μPD44164182B-A is a 1,048,576-word by 18-bit and the μPD44164362B-A is a 524,288-word by 36bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS

Contextual Info: Datasheet PD44164182B-A μPD44164362B-A 18M-BIT DDR II SRAM 2-WORD BURST OPERATION R10DS0014EJ0100 Rev.1.00 Dec 13, 2010 Description The μPD44164182B-A is a 1,048,576-word by 18-bit and the μPD44164362B-A is a 524,288-word by 36bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS