HY5117400A Search Results

Contextual Info: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide

HYM53

Contextual Info: • HYUNDAI HYM536A810A M-Series 8M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A81OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of eighteen HY5117400A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each

Contextual Info: HY5117400A Series ••HYUNDAI 4M x 4-bit CMOS DRAM DESCRIPTION me HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. "Hie HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

M53241

Contextual Info: HYM532410 N-Series •HYUN DAI 4M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410 is a 4M x 32-bit Fast page mode CMOS DRAM Module consisting of eight HY5117400A in 24/26 pin TSOPII on a 72 pin Zig Zag Dual tabs glass-epoxy printed circuit board. 0 22^F decoupling capacitor is

HY5117400A

Contextual Info: ••H Y U N D A I HY5117400A Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit, The HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HYM572A410A N-Series “H Y U N D A I 4M X 72-bit CMOS DRAM MODULE DESCRIPTION The HYM572A410A is a 4M x 72-bit Fast page m ode CMOS DRAM m odule consisting of eighteen HY5117400A in 24/28 pin TSOP-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit board.

Contextual Info: ’«YUHDAt * H Y M 5 3 6 8 1 0 A M - S e r ie s 8Mx36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin

1CE13-10-DEC94

Abstract: HY5117400A
Contextual Info: HYM532410A M-Series 4Mx32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410A is a 4M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted

Contextual Info: » « Y I I H D W I HYM532810A M-Series 8Mx32-blt CMOS DRAM MODULE DESCRIPTION The HYM532810A is a 8M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SQJ or TSOPfl on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling

MAX7523

Contextual Info: HY5117400A, HY5116400A -HYUNDAI 4M DESCRIPTION X 4-bit CMOS DRAM ORDERING INFORMATION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode C M O S DRAMs. Fast Page mode offers high speed random access o f m em ory cells w ithin the sam e row.

HY5117400A

Abstract: A1D10 HY5117400AJ60 HY5117400AJ 1AD27-10-MA HY5117400 AMO 0210 OH371
Contextual Info: HY5117400A Series • H Y U N D A I 4M 4-bit CMOS DRAM X DESCRIPTION The HY5117400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. T he HY5117400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: •HYUNDAI 532810A HYM 8M X M-Series 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532810A is a 8M x 32-bit R et page mods CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted

HY5117400A

Contextual Info: HYM532810A M-Series 8Mx32-bit CMOS DRAM MODULE DESCRIPTION The HYM532810A is a 8M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted for each DRAM. The HYM532810AM/ASLM/ATM/ASLTM are Tin-Lead plated and

HYM536410AMG

Abstract: hym536410am HY5117400A HY514100A
Contextual Info: HYM536410A M-Series 4Mx36-bit CMOS DRAM MODULE DESCRIPTION The HYM536410A is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted for each DRAM. The HYM536410AM / ASLM / ATM /

Contextual Info: •HYUNDAI HYM536810A M-Series 8M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM53681OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOP1I and eight HY514100Ain 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit

Contextual Info: “HYUNDAI HYM536A810A M-Series 8M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A81OA is a 8M x 36-bit Fast page mode CMOS DRAM m odule consisting of eighteen HY5117400A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is m ounted tor each

simm 72 dram

Contextual Info: - H Y U N D A I H Y M 5 3 2 8 1 0 A 8M X M - S e r ie s 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532810A is a 8M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22 iF decoupling capacitor is mounted

Contextual Info: 'HYUNDAI HYM536A410A M-Series 4M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A41OA is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5117400A in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for each DRAM.

Contextual Info: H Y C 5 3 6 4 1 0 • • H Y U N D A I S e r i e s 4Mx36 DRAM CARD DESCRIPTION The HYC536410 is the DRAM memory card consisting of eight HY5117400ASLTand four HY5141OOALT built in the metal plate housing. The Hyundai DRAM card is optimized forthe applications such as buffering, main and add-in

Contextual Info: “H Y U N D A I HYM536A410A M-Series 4M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A41OA is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5117400A in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.

Contextual Info: » H Y U N D A I H Y M 5 3 6 8 1 0 A M - S e r ie s 8M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or 7SOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit

HYM53241

Contextual Info: -0 0 Y U I I P I I I HYM532410A M-Series 4Mx32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410A is a 4M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|*Fdecoupling are mounted

Contextual Info: •HYUNDAI HYM564410A N-Series 4M x 64-bit CMOS DRAM MODULE DESCRIPTION The HYM564410A is a 4M x 64-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/28 pin SOJ or TSOP-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit

jeida dram 88 pin

Contextual Info: HYC532410 Series ‘ HYUNDAI 4Mx32 DRAM CARD DESCRIPTION The HYC532410 is the DRAM memory card consisting of eight HY5117400ASLT built in the metal plate housing. The Hyundai DRAM card is optimized orthe applications such as buffering, main and add-in memory in the portable