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    4B75DFLA Search Results

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    hym536810

    Abstract: HYM53
    Contextual Info: HYM536810 M-Series •HYUNDAI 8M x 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810 is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400 in 24/28 pin SOJ orTSOP and eight HY514100A in 20/26 pin SOJ orTSOP II on a 72 pin glass-epoxy printed circuit board.


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    hym53681036-blt36-bithy5117400+6hy514100a22fifhym53681om/lm/tm/ltmhym53681omg/lmg/tmg/ltmghym53681ot/lthym53 PDF

    721 KXC

    Abstract: moc 3048
    Contextual Info: «HYUNDAI H Y 6 2 V 8 1 0 0 A 128K S e r ie s CMOS SRAM X 8 -b it PRELIMINARY DESCRIPTION The HY62V8100A is a high-speed, low power and 131.072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V8100A has a data retention mode that


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    hy62v8100a128kx55/70/85/100ns-100/120/150/200ns+5t00-h792e01dd04-11-may95721 kxcmoc 3048 PDF

    Contextual Info: -HYUNDAI H Y 5 1 1 6 1 6 4 B S e r ie s 1Mx 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    16-bithy5116164b1ads7-10-may95hy5116164bjc+2hy5116164bsljchy5116164btc PDF

    Contextual Info: Y I I I I VI A I I U 11 U l l l HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 70 ns access time • Compatible with JEDEC-Standard Commands


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    hy29f200t/bhy29f20016-bitg-70i+6t-70ir-701g-70et-70er-70eg-90i PDF

    Contextual Info: •HYUNDAI SEMICONDUCTOR HYM540410 Series 4M X 40-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM540410 is a 4M x 40-bit Fast page mode CMOS DRAM module consisting often HY5117400 in 24/28 pin SOJ orTSOP-ll on a 72 pin glass-epoxy printed circuit board. O.Zty? decoupling capacitor is mounted for each


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    hym54041040-bithy5117400hym54041om/lm/tm/ltm+4hym54041omg/lmg/tmg/ltmghym540410m/lmhym540410tm/ltm1ce09-00-may93 PDF

    Contextual Info: » H Y U N D A I H Y M 5 3 6 8 1 0 A M - S e r ie s 8M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or 7SOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit


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    36-bithym536810ahy5117400ahy514100a+5hym53681oam/alm/atm/altmhym53681oamg/almg/atmg/altmghym536810a/alhym536810at/alt4b75dfla PDF

    Contextual Info: • HYUNDAI HYM536220A W-Series 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536220A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^Fdecoupling


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    hym536220a36-bithy5118160bhy531000a+4hym536220aw/lwhym536220awg/lwgback-14dq0-dq35 PDF

    Contextual Info: •HYUNDAI H Y 5 2 1 6 2 5 7 256K x S e r ie s 16-bit Video RAM with 2WE Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.


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    16-bit16bits1vc02-00-may95hy5216257+5525mil64pin4b750flfl1vc02-00-may9shy5216256ge PDF