200NS Search Results

UZ210

Abstract: P1275
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TMM27512ADI-20, TMM27512ADI-25 DESCRIPTION The TMM27512ADI is a 65,536 words * 8 bits ultraviolet light erasable and electri­ cally programmable read only memory. For read operation, the TMM27512ADI's access time is 200ns/250ns, and the TMM27512ADI

54256AP

Abstract: TC54256AF 54256a TC54256P 54256AF tmm23256p 27256D tc54256ap
Contextual Info: TOSHIBA TC54256AP/AF SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT ONE TIME PROGRAMMABLE READ ONLY MEMORY D e s c rip tio n The TC54256AP/AF is a 32,768 word x 8 bit one time programm able read only m em or/ m olded in a 28-pin plastic package. The TC54256AP/AF’s access time is 200ns and it has a low power standby m ode which reduces the power dissipation without

Contextual Info: SILICON DIFFUSED TYPE FAST RECOVERY RECTIFIER <j SWITCHING TYPE POWER SUPPLY APPLICATIONS. Unit in mm . Repetitive Peak Reverse Voltage : Vrr{,j=600V . Average Forward Current : If AV =1.5A . Very Fast Reverse-Recovery Time : trr=200ns (Max.) + MAXIMUM RATINGS

Contextual Info: 2NH45 SILICON DIFFUSED TYPE FAST RECOVERY RECTIFIER SWITCHING TYPE POWER SUPPLY APPLICATIONS. Unit in mm . Repetitive Peak Reverse Voltage : VRRf.j=1000V . Average Forward Current : If AV =2.0A . Very Fast Reverse-Recovery Time : trr=200ns(Max.) MAXIMUM RATINGS

Contextual Info: 1R5JH45 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1R5JH45 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS z Repetitive Peak Reverse Voltage : VRRM = 600V z Average Forward Current : IF AV = 1.5A z Very Fast Reverse−Recovery Time : trr = 200ns (MAX.)

80N10

Abstract: 80N10Q
Contextual Info: HiPerFETTM Power MOSFETs IXFH 80N10Q IXFT 80N10Q VDSS ID25 = 100 V = 80 A = 15 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C

HA7-2520-2

Abstract: HA2525 HA-2525 HA2-2520-2 HA2-2522-2 HA2-2525-5 HA-2520 HA-2522 ha-2525-5
Contextual Info: HA-2520, HA-2522, HA-2525 Data Sheet February 16, 2009 20MHz, High Slew Rate, Uncompensated, High Input Impedance, Operational Amplifiers Features • High Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . 120V/µs • Fast Settling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200ns

IA317

Contextual Info: STK12C68 SimTEH CMOS nvSRAM 8K x 8 High Performance AutoStore Nonvolatile Static RAM FEATURES 30,35 and 45ns Access Times 15 mA Ice at 200ns Access Speed Automatic STORE to EEPROM on Power Down Hardware or Software initiated STORE to EEPROM Automatic sro/?£Timing

1GH46

Contextual Info: TOSHIBA 1GH46 TOSHIBA FIELD EFFECT TRANSISTOR CMOS A / D CONVERTER 1 G H 46 SWITCHING TYPE PO W ER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Reeovery Time Vr RM = 400V :F AV = !-0 a trr = 200ns (Max.)

1JH46

Contextual Info: TOSHIBA 1JH46 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1J H46 SWITCHING TYPE PO W ER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Reeovery Time V r r m = 600V :F AV = !-Oa trr = 200ns (Max.)

25LS2521

Abstract: 25LS244 8051 interface 8155 8251 with 8086 9511A 6259A 8155 programmable peripheral interface 9517A AMZ8536 8253 interface with 8086 Peripheral
Contextual Info: MOS Microprocessor MOS Microprocessor Family Selector Guide 8086/88 8085A 8085A-2 8080A Z8001/2t Z8001/2-A Clock Parted 200ns 320ns 200ns Clock Generator 8284A On-Chip On-Chip 8224 8127 8127 Arithmetic Processing Unit 8087 9511A-1 9512-1 9 5Í1A -4 9512-1

Contextual Info: Am9131 •Am91L31 1024 x 4 Static R/W Random Access Memories D I S T I N C T I V E C H A R A C T E R I S T IC S G E N E R A L D E S C R IP T I O N I k X 4 organization Fully static data storage — no refreshing Single + 5 V power supply High-speed — access times dow n to 200ns max.

Contextual Info: 1GH46 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFUSED TYPE 1GH46 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS z Repetitive Peak Reverse Voltage : VRRM = 400V z Average Forward Current : IF AV = 1.0A z Very Fast Reverse Recovery Time : trr = 200ns (Max)

Contextual Info: 1JH46 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1JH46 SWITCHING MODE POWER SUPPLY APPLICATIONS z Repetitive Peak Reverse Voltage : VRRM = 600V z Average Forward Current : IF AV = 1.0A Unit: mm z Very Fast Reverse−Recovery Time : trr = 200ns (Max)

Contextual Info: ß lä § L 0M flß 9M f 87C75PF MICROCONTROLLER PERIPHERAL I/O PORT EXPANDER WITH 32Kx8 EPROM • 2 Configurable 8-bit I/O Ports — Open Drain — Quasi-bi-directional — CMOS ■ 32K x 8 EPROM — 200nS Access Time ■ Quick-Pulse Programming Algorithm

idt8m864

Abstract: IDT7m864 7m864 IDT6116 8M864 idt6116s
Contextual Info: IDT7M864 IDT8M864 6 4 K 8K X 8 C M O S STATIC RA MPAK 64K RAM PAK FEATURES: • Equivalent to JEDEC standard 8K x 8 monolithic RAM • 8,192 x 8 CMOS static RAM module complete w ith decoder and decoupling capacitor _ • High-speed 65 (commercial only) 75/85/120/150/200ns

HM472114AP-2

Abstract: HM472114A HM472114A-2 2114L HM472114A-1 HM472114AP-1 HM472114AP2
Contextual Info: H M 472114A -1 ,H M 4 7 2 1 1 4 A -2 , H M 472114A P-1 ,H M 4 7 2 1 1 4 A P -2 1 0 2 4 -word X 4 - bit Static Random Access M em ory Fast Access T i m e . H M 4 72 114 A -1 150ns max. H M 4 7 2 1 1 4 A -2 200ns (m ax.)

Microchip vk 1103

Contextual Info: fiW l e « « . 27LV128 M Ie r o o h Ip 128K 16K X 8 Low Voltage CMOS EPROM FEATURES DESCRIPTION • Wide voltage rang« 3.0V to 5.5V • High speed performance — 200ns Maximum access time at 3.0V • CMOS Technology for low power consumption — 8mA active current at 3.0V

Contextual Info: & PIC16C5X Microchip EPROM-Based 8-Bit CMOS Microcontroller Series FEATURES High-Performance RISC-like CPU • Only 33 single word instructions to leam • All single cycle instructions 200ns except for program branches which are two-cycle • Operating speed: DC - 20 MHz clock input

RH111

Contextual Info: RH111 Voltage Comparator U W W W U DESCRIPTIO ABSOLUTE The RH111 is a general purpose voltage comparator. The RH111 offers maximum input offset voltage of 3mV and input offset current of 10nA with a typical response time of 200ns. The RH111 can operate from a single 5V supply

tc 9310

Abstract: RURU150120
Contextual Info: RURU150120 Data Sheet January 2000 File Number 4146.1 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

Contextual Info: MICROELECTRONICS XL28C64B E x txH o n ctin? 8K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle PIN C O N F IG U R A TIO N S F E A TU R ES • Fast Read A ccess T im es — 120ns, 150ns, 200ns and 250ns ■ Low C M O S P o w er C onsum ption

Contextual Info: Fast Settling, Video Op Amp with Disable FEATURES typical • -3dB bandw idth of 200M Hz • 0.05% settling in 12ns • low power, 160mW (40m W disabled) • low distortion, -60dB c at 20M Hz • fast disable (200ns) • differential gain/phase: 0.01% /0.01°

Contextual Info: Preliminary CAT28HT64 Extended Tem perature: 170 °C 64K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: - 1 50/200ns ■ Automatic Page Write Operation: - 1 to 32 Bytes in 5ms - Page Load Timer ■ Low Power CMOS Dissipation: - Active: 25 mA Max. - Standby: 300 nA Max.