80N10 Search Results

80N10

Abstract: 80N10Q
Contextual Info: HiPerFETTM Power MOSFETs IXFH 80N10Q IXFT 80N10Q VDSS ID25 = 100 V = 80 A = 15 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFETs IXFR 80N10Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns RDS(on) = 100 V = 76 A = 15 mW Preliminary Data Sheet Symbol Test Conditions

smd marking 58a

Abstract: 80N10L INFINEON PART MARKING to220 pcb footprint SPI80N10L SPP80N10L 80N10 SMD marking code 58A
Contextual Info: 80N10L 80N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS Package Ordering Code Marking 80N10L PG-TO220-3-1 Q67042-S4173 80N10L

80N10

Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC 80N10 VDSS ID25 RDS on trr ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

80N10

Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC 80N10 VDSS ID25 RDS on trr ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

80N10

Abstract: to-268
Contextual Info: HiPerFETTM Power MOSFETs VDSS = 100 V = 80 A ID25 Ω RDS on = 12.5 mΩ IXFH 80N10 IXFT 80N10 N-Channel Enhancement Mode Avalanche Rated, High dv/dt trr ≤ 200 ns Preliminary data sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR VGS Maximum Ratings

80N10Q

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 80N10Q IXFT 80N10Q Q-Class VDSS ID25 RDS on trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFETs IXFR 80N10Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns = 100 V = 76 A = 15 mW RDS(on) Preliminary Data Sheet Symbol Test Conditions

Contextual Info: DIXYS Advanced Technical Information HiPerFET Power MOSFETs IXFH 80N10Q IXFT 80N10Q Q Class R DS on = 100 V = 80 A = 15 m f t t < 200 ns V DSS ^D25 rr N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions

ISOPLUS247

Abstract: 80N10Q E153432 80N10
Contextual Info: HiPerFETTM Power MOSFETs IXFR 80N10Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns RDS(on) = 100 V = 76 A = 15 mW Preliminary Data Sheet Symbol Test Conditions

80N10

Abstract: 4800 mosfet mosfet 4800
Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC 80N10 VDSS ID25 RDS on trr ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFETs IXFH 80N10Q IXFT 80N10Q VDSS ID25 = 100 V = 80 A = 15 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C

80N10

Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC 80N10 VDSS ID25 RDS on trr ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

smd marking 58a

Abstract: 80N10L SPP80N10L SMD marking code 58A SPB80N10L SPI80N10L TP 80N10 SPP80N1
Contextual Info: Preliminary data 80N10L 80N10L,80N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS P-TO262-3-1 100 V RDS on 14 m
ID 80 A P-TO263-3-2

smd marking 58a

Abstract: SPB80N10L SPP80N10L 80N10L SPI80N10
Contextual Info: 80N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 100 V RDS on 14 m
ID 80 A P-TO263-3-2 Type Package Ordering Code Marking 80N10L

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

smd marking 58a

Abstract: 80N10L IEC61249-2-21 SPB80N10L SPP80N10L
Contextual Info: 80N10L G SIPMOSΤΜPower-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated; Halogen-free according to IEC61249-2-21 Type Package 80N10L P-TO263-3 100 VDS V RDS on

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

Contextual Info: 80N10F7, 80N10F7, 80N10F7-2, 80N10F7 N-channel 100 V, 0.008 Ω typ., 80 A STripFET VII DeepGATE™ Power MOSFETs in DPAK, TO-220FP, H2PAK-2 and TO-220 Datasheet - production data Features TAB Order codes 3 1 DPAK 1 2 3 TO-220FP 80N10F7 80N10F7

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

C1146

Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06