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    120N20 Search Results

    120N20 Datasheets (2)

    Huashuo Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge HSX120N20
    		Huashuo Semiconductor HSX120N20 N-channel 200V MOSFET with 8.9 mΩ RDS(ON), 120 A continuous drain current, TO-247 package, suitable for high-efficiency power switching applications. Original PDF
    badge HSH120N20
    		Huashuo Semiconductor 200V N-channel trench MOSFET with 8.9 mΩ typical RDS(ON), 120A continuous drain current, and high cell density for fast switching applications in power conversion. Original PDF
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    120N20 Price and Stock

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    IXYS Corporation IXTQ120N20P

    MOSFET N-CH 200V 120A TO3P
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    DigiKey IXTQ120N20P Tube 2,551 1
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    Mouser Electronics IXTQ120N20P
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    TTI IXTQ120N20P Tube 300
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    Torex Semiconductor LTD XC6120N202NR-G

    IC SUPERVISOR 1 CHANNEL SSOT24
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    DigiKey () XC6120N202NR-G Tape & Reel 2,292 3,000
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    XC6120N202NR-G Digi-Reel 2,292 1
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    Mouser Electronics XC6120N202NR-G 1,320
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    Avnet Silica XC6120N202NR-G 21 Weeks 3,000
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    IXYS Corporation IXTP120N20X4

    MOSFET
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    DigiKey IXTP120N20X4 Tube 487 1
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    Mouser Electronics IXTP120N20X4 523
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    TTI IXTP120N20X4 Tube 300
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    IXYS Corporation IXTH120N20X4

    MOSFET
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    DigiKey IXTH120N20X4 Tube 216 1
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    Mouser Electronics IXTH120N20X4 1,197
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    ROHM Semiconductor RCX120N20

    MOSFET N-CH 200V 12A TO220FM
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    Mouser Electronics RCX120N20 451
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    Newark RCX120N20 Bulk 1
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    Ameya Holding Limited RCX120N20 1,000 10
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    120N20 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    120N20

    Contextual Info: IXFX 120N20 HiPerFET TM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = = = 200 V 120 A 17 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 200 200 V V VGS


    Original     		120N20 120N20 PDF

    Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		120N20 120N20 ID104 247TM O-264 125OC 728B1 PDF

    120N20

    Contextual Info: HiPerFET TM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		120N20 120N20 ID104 247TM O-264 125OC 728B1 PDF

    120N20

    Abstract: motor IG 2200 19 125OC ID104
    Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		120N20 ID104 247TM 125OC 728B1 120N20 motor IG 2200 19 125OC ID104 PDF

    Contextual Info: PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P VDSS = 200 V ID25 = 120 A RDS on ≤ 22 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		120N20P O-264 PDF

    Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		120N20 ID104 247TM 125OC 728B1 PDF

    120N20

    Abstract: DS965
    Contextual Info: IXFN 120N20 HiPerFETTM Power MOSFETs VDSS ID25 = 200 V = 120 A Ω = 17 mΩ Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr ≤ 250 ns Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		120N20 OT-227 E153432 728B1 120N20 DS965 PDF

    Contextual Info: HiPerFETTM Power MOSFETs IXFR 120N20 VDSS = 200 ID25 = 105 ISOPLUS247TM V A Ω 17 mΩ Electrically Isolated Back Surface RDS(on) = Single MOSFET Die trr ≤ 250 ns Preliminary Data Sheet Maximum Ratings ISOPLUS 247TM E153432 Symbol Test Conditions VDSS


    Original     		120N20 ISOPLUS247TM 728B1 PDF

    Contextual Info: □ IXYS H H ifl JL æ* X HiPerFET 120N20 Power MOSFETs OD N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr V DSS v DGR ^ ^ v GS VGSM ^D25 ” 200 V 120 A 17 m Q t < 250 ns /|[~ 1 G VI. " 1 I Preliminary data sheet TestConditions = R DS on =


    OCR Scan     		IXFN120N20 OT-227 E153432 PDF

    110N20

    Abstract: pf 480 d25
    Contextual Info: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX F K Single MOSFET Die 12 0N 2 0 11 0N 20 120 N 20 11 0N 2 0 200V 200V 200V 200V p DS on ^D25 120A 110A 120A 110A 17m£2 20m£2 17m£2 20m£2 200ns 200ns 200ns 200ns TO-264 AA (IXFK)


    OCR Scan     		200ns 200ns O-264 110N20 120N20 Cto150 110N20 pf 480 d25 PDF