120N20 Search Results

120N20 Datasheets (2)

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Huashuo Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
HSH120N20		Huashuo Semiconductor	200V N-channel trench MOSFET with 8.9 mΩ typical RDS(ON), 120A continuous drain current, and high cell density for fast switching applications in power conversion.	Original	PDF
HSX120N20		Huashuo Semiconductor	HSX120N20 N-channel 200V MOSFET with 8.9 mΩ RDS(ON), 120 A continuous drain current, TO-247 package, suitable for high-efficiency power switching applications.	Original	PDF

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Torex Semiconductor LTD XC6120N202NR-G IC SUPERVISOR 1 CHANNEL SSOT24
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	XC6120N202NR-G	Cut Tape	2,292		1	1 $0.42 10 $0.29 100 $0.23 1000 $0.19 10000 $0.19	Buy Now
	XC6120N202NR-G	Tape & Reel	2,292		3,000	1 - 10 - 100 - 1000 - 10000 $0.17	Buy Now
	XC6120N202NR-G	Digi-Reel	2,292		1	1 $0.42 10 $0.29 100 $0.23 1000 $0.19 10000 $0.19	Buy Now
Mouser Electronics ()	XC6120N202NR-G		2,890			1 $0.42 10 $0.29 100 $0.23 1000 $0.19 10000 $0.18	Buy Now
	XC6120N202NR-G		1,370			1 $0.42 10 $0.29 100 $0.23 1000 $0.19 10000 $0.18	Buy Now
TME	XC6120N202NR-G				1	1 $0.40 10 $0.28 100 $0.21 1000 $0.18 10000 $0.18	Get Quote
Avnet Silica	XC6120N202NR-G			21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXTP120N20X4 MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP120N20X4	Tube	492		1	1 $11.29 10 $11.29 100 $5.82 1000 $4.94 10000 $4.94	Buy Now
Mouser Electronics ()	IXTP120N20X4		623			1 $11.29 10 $6.30 100 $5.80 1000 $5.73 10000 $5.73	Buy Now
	IXTP120N20X4		623			1 $11.29 10 $6.30 100 $5.81 1000 $5.73 10000 $5.73	Buy Now
TTI	IXTP120N20X4	Tube			300	1 - 10 - 100 - 1000 $5.64 10000 $5.64	Buy Now
IXYS Corporation IXTH120N20X4 MOSFET
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DigiKey	IXTH120N20X4	Tube	216		1	1 $13.10 10 $13.10 100 $7.89 1000 $6.00 10000 $6.00	Buy Now
Mouser Electronics ()	IXTH120N20X4		1,392			1 $13.10 10 $7.89 100 $7.89 1000 $6.96 10000 $6.96	Buy Now
	IXTH120N20X4		1,197			1 $13.10 10 $7.89 100 $7.89 1000 $6.47 10000 $6.47	Buy Now
TTI	IXTH120N20X4	Tube			300	1 - 10 - 100 - 1000 $6.74 10000 $6.74	Buy Now
IXYS Corporation IXTQ120N20P MOSFET N-CH 200V 120A TO3P
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DigiKey	IXTQ120N20P	Tube	1		1	1 $16.10 10 $16.10 100 $9.86 1000 $7.83 10000 $7.83	Buy Now
Mouser Electronics	IXTQ120N20P					1 $16.10 10 $9.87 100 $9.87 1000 $9.09 10000 $9.09	Get Quote
Newark	IXTQ120N20P	Bulk			1	1 $15.78 10 $13.72 100 $10.32 1000 $9.54 10000 $9.54	Buy Now
TTI	IXTQ120N20P	Tube			300	1 - 10 - 100 - 1000 $8.75 10000 $8.75	Buy Now
TME	IXTQ120N20P		1		1	1 $9.24 10 $9.24 100 $7.72 1000 $6.41 10000 $6.34	Buy Now
ROHM Semiconductor RCX120N20 MOSFET N-CH 200V 12A TO220FM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RCX120N20	Bulk			500	1 - 10 - 100 - 1000 $1.08 10000 $1.08	Buy Now
Mouser Electronics ()	RCX120N20		451			1 $3.11 10 $2.02 100 $1.39 1000 $1.06 10000 $1.01	Buy Now
	RCX120N20		451			1 $3.11 10 $2.02 100 $1.39 1000 $1.06 10000 $1.01	Buy Now
Newark	RCX120N20	Bulk			1	1 $1.19 10 $1.19 100 $1.19 1000 $1.19 10000 $1.19	Buy Now

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120N20 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
120N20 Contextual Info: IXFX 120N20 HiPerFET TM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = = = 200 V 120 A 17 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 200 200 V V VGS	Original	120N20 120N20	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	120N20 120N20 ID104 247TM O-264 125OC 728B1	PDF
120N20 Contextual Info: HiPerFET TM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	120N20 120N20 ID104 247TM O-264 125OC 728B1	PDF
e15343 Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTR 120N20P VDSS = 200 V ID25 = 85 A Ω RDS on ≤ 25 mΩ Electrically Isolated Tab, N-Channel Enhancement Mode, Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200	Original	120N20P e15343	PDF
ID104 Abstract: IXFX Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A = 17 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 200 200	Original	120N20 ID104 247TM ID104 IXFX	PDF
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 120N20 VDSS = 200 ISOPLUS247TM ID25 = 105 RDS on = (Electrically Isolated Back Surface) trr £ 250 ns Single MOSFET Die Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW	Original	120N20 ISOPLUS247TM 247TM	PDF
120N20 Abstract: motor IG 2200 19 125OC ID104 Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	120N20 ID104 247TM 125OC 728B1 120N20 motor IG 2200 19 125OC ID104	PDF
Contextual Info: PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P VDSS = 200 V ID25 = 120 A RDS on ≤ 22 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	120N20P O-264	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	120N20 ID104 247TM 125OC 728B1	PDF
NS152 Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXFN 120N20P VDSS = 200 V ID25 = 120 A Ω RDS on ≤ 22 mΩ ≤ 220 ns trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ	Original	120N20P NS152	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A = 17 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 200 200	Original	120N20 120N20 ID104 247TM O-264	PDF
120n20 Abstract: ID104 Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	120N20 ID104 247TM 728B1 123B1 728B1 065B1 120n20 ID104	PDF
120N20 Abstract: DS965 Contextual Info: IXFN 120N20 HiPerFETTM Power MOSFETs VDSS ID25 = 200 V = 120 A Ω = 17 mΩ Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr ≤ 250 ns Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions	Original	120N20 OT-227 E153432 728B1 120N20 DS965	PDF
120N20P Contextual Info: PolarHTTM HiPerFET IXFH 120N20P IXFK 120N20P Power MOSFET VDSS = 200 V ID25 = 120 A RDS on ≤ 22 m Ω ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	120N20P O-247 120N20P	PDF

Contextual Info: Advanced Technical Information HiPerFET Power MOSFETs IXFR 120N20 ISOPLUS247™ Electrically Isolated Back Surface Symbol Test Conditions v T j = 25° C to 150° C ^ = 25°Cto150°C ;R GS=1 Mi2 200 200 V V Continuous T ranslent ±20 £30 V V Tc = 25° C (MOSFET chip capability)	OCR Scan	120N20 ISOPLUS247TM Cto150 247TM	PDF
Contextual Info: IXFN 120N20 HiPerFET TM Power MOSFETs VDSS ID25 = 200 V = 120 A = 17 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Preliminary data sheet Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol	Original	120N20 OT-227 E153432	PDF
120N20 Contextual Info: HiPerFET TM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	120N20 120N20 ID104 247TM O-264 125OC 728B1	PDF
Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTQ 120N20P IXTK 120N20P VDSS = 200 V ID25 = 120 A Ω RDS on ≤ 22 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	120N20P	PDF
IXFH120N20P Contextual Info: Advanced Technical Information PolarHTTM HiPerFET IXFH 120N20P IXFK 120N20P Power MOSFET VDSS = 200 V ID25 = 120 A Ω RDS on ≤ 22 mΩ ≤ 140 ns trr N-Channel Enhancement Mode Avalanche Rated, Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	120N20P IXFH120N20P	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFN 120N20 VDSS ID25 = 200 V = 120 A = 17 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Preliminary data sheet Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol	Original	120N20 OT-227 E153432	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFR 120N20 VDSS = 200 ID25 = 105 ISOPLUS247TM V A Ω 17 mΩ Electrically Isolated Back Surface RDS(on) = Single MOSFET Die trr ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	120N20 ISOPLUS247TM 728B1	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFN 120N20 VDSS ID25 = 200 V = 120 A = 17 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Preliminary data sheet Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol	Original	120N20 OT-227	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFR 120N20 VDSS = 200 ID25 = 105 ISOPLUS247TM V A Ω 17 mΩ Electrically Isolated Back Surface RDS(on) = Single MOSFET Die trr ≤ 250 ns Preliminary Data Sheet Maximum Ratings ISOPLUS 247TM E153432 Symbol Test Conditions VDSS	Original	120N20 ISOPLUS247TM 728B1	PDF
120N20P Abstract: IXTQ120N20P 120N20 Contextual Info: PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P VDSS = 200 V ID25 = 120 A RDS on ≤ 22 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	120N20P O-264 120N20P IXTQ120N20P 120N20	PDF

120N20 Search Results

120N20 Datasheets (2)

120N20 Price and Stock

Torex Semiconductor LTD XC6120N202NR-G

IXYS Corporation IXTP120N20X4

IXYS Corporation IXTH120N20X4

IXYS Corporation IXTQ120N20P

ROHM Semiconductor RCX120N20

120N20 Datasheets Context Search

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