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STMicroelectronics STL26N60DM6 N-Channel Power MOSFET 600V 15A 5-Pin PowerFLAT T/R - Tape and Reel (Alt: STL26N60DM6)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	STL26N60DM6	Tape & Reel		32 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $1.59	Buy Now
Newark	STL26N60DM6	Cut Tape	60		1	1 $5.80 10 $5.80 100 $3.10 1000 $2.71 10000 $2.60	Buy Now
Avnet Silica	STL26N60DM6			33 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	STL26N60DM6			33 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SIHH26N60EF-T1-GE3 - Tape and Reel (Alt: SIHH26N60EF-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHH26N60EF-T1-GE3	Tape & Reel		35 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $3.79	Buy Now
EBV Elektronik	SIHH26N60EF-T1-GE3			42 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics STB26N60M2 - Tape and Reel (Alt: STB26N60M2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	STB26N60M2	Tape & Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark ()	STB26N60M2	Tape & Reel			100	1 - 10 - 100 $3.69 1000 $2.54 10000 $2.33	Buy Now
	STB26N60M2	Cut Tape			1	1 $4.42 10 $4.42 100 $3.69 1000 $2.54 10000 $2.33	Buy Now
STMicroelectronics	STB26N60M2		291		1	1 $3.52 10 $2.63 100 $1.93 1000 $1.64 10000 $1.64	Buy Now
Vyrian	STB26N60M2		2,535			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SIHG026N60EF-GE3 N-CHANNEL 600V - Tape and Reel (Alt: SIHG026N60EF-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHG026N60EF-GE3	Tape & Reel		35 Weeks	500	1 - 10 - 100 - 1000 $8.76 10000 $8.10	Buy Now
Newark	SIHG026N60EF-GE3	Bulk	18		1	1 $17.51 10 $10.15 100 $9.96 1000 $9.56 10000 $9.56	Buy Now
EBV Elektronik	SIHG026N60EF-GE3			42 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics STW26N60M2 - Bulk (Alt: STW26N60M2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	STW26N60M2	Bulk		26 Weeks	600	1 - 10 - 100 - 1000 $1.55 10000 $1.47	Buy Now
STMicroelectronics	STW26N60M2		226		1	1 $4.68 10 $2.40 100 $2.18 1000 $2.18 10000 $2.18	Buy Now
ComSIT USA	STW26N60M2		595			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	STW26N60M2			27 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	STW26N60M2			27 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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26N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
26N60P Abstract: PLUS220SMD Contextual Info: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 = = RDS on ≤ ≤ trr TO-247 (IXFH) Symbol	Original	26N60P 26N60PS O-247 PLUS220SMD PLUS220 O-268 26N60P PLUS220SMD	PDF
26n60q Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFK 26N60Q IXFX 26N60Q VDSS ID25 RDS on Q-Class = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions Maximum Ratings VDSS VDGR	Original	26N60Q 247TM O-264 728B1 26n60q	PDF
26n60 Abstract: 28n60 IXFK28N60 IXFH26N60 IXFT26N60 ixfh 26 n 49 Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 600 V 26 A 600 V 28 A trr £ 250 ns RDS on 0.25 W 0.25 W Preliminary data Symbol Test Conditions Maximum Ratings IXFH/ IXFT	Original	26N60/IXFT 26N60 28N60 O-247 26n60 28n60 IXFK28N60 IXFH26N60 IXFT26N60 ixfh 26 n 49	PDF
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60 IXFT 26N60 ID25 RDS on 600 V 26 A 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	26N60 O-268 O-247 O-268 728B1 123B1 065B1	PDF
26N60Q Contextual Info: HiPerFETTM Power MOSFETs IXFR 26N60Q ISOPLUS247TM Q-CLASS Electrically Isolated Back Surface N-Channel Enhancement Mode Avalance Rated, High dV/dt Low Gate Charge and Capacitances trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C	Original	26N60Q ISOPLUS247TM 247TM E153432	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFK 26N60Q IXFX 26N60Q VDSS ID25 RDS on Q-Class = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	26N60Q 247TM 728B1	PDF
26n60 Abstract: 26N60P PLUS220SMD Contextual Info: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions	Original	26N60P 26N60PS O-247 PLUS220SMD PLUS220 O-268 26n60 26N60P PLUS220SMD	PDF
max2678 Contextual Info: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A RDS on ≤ 270 m Ω ≤ 200 ns trr IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C	Original	26N60P 26N60PS O-247 O-268 PLUS220 max2678	PDF
Contextual Info: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET VDSS ID25 = = RDS on ≤ ≤ trr IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated TO-247 (IXFH) Symbol	Original	26N60P 26N60PS O-247 405B2 26N60P PLUS220	PDF
DSA003703 Abstract: 26n60 Contextual Info: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions	Original	26N60P 26N60PS O-247 O-268 DSA003703 26n60	PDF
26N60P Abstract: TO-248 Contextual Info: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions	Original	26N60P 26N60PS O-247 O-268 PLUS220 PLUS220SMD TO-248	PDF
26N60Q Abstract: C2770 IXFH26N60Q Contextual Info: HiPerFETTM Power MOSFETs IXFH 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM	Original	26N60Q O-247 728B1 123B1 728B1 065B1 26N60Q C2770 IXFH26N60Q	PDF
26N60Q Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60Q IXFK 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V I D25 IDM I AR	Original	26N60Q 26N60Q O-247 O-268 O-268	PDF
26N60Q Contextual Info: HiPerFETTM Power MOSFETs IXFH 26N60Q IXFK 26N60Q IXFT 26N60Q Q-Class VDSS ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600	Original	26N60Q 26N60Q O-247 O-268 O-264 O-268	PDF

spf560 Abstract: 26N60Q Contextual Info: HiPerFETTM Power MOSFETs IXFR 26N60Q ISOPLUS247TM Q-CLASS Electrically Isolated Back Surface N-Channel Enhancement Mode Avalance Rated, High dV/dt Low Gate Charge and Capacitances trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	26N60Q ISOPLUS247TM spf560 26N60Q	PDF
26N60Q Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60Q IXFK 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V	Original	26N60Q 26N60Q O-247 O-268 O-268AA	PDF
26N60 Abstract: 28n60 Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 600 V 26 A 600 V 28 A trr £ 250 ns RDS on 0.25 W 0.25 W Preliminary data Symbol Test Conditions Maximum Ratings IXFH/ IXFT	Original	26N60/IXFT 26N60 28N60 O-247 O-268AA 28n60	PDF
26n60q Contextual Info: HiPerFETTM Power MOSFETs IXFH 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM	Original	26N60Q O-247 728B1 26n60q	PDF
26n60 Abstract: 26N60Q k 2134 Contextual Info: HiPerFETTM Power MOSFETs IXFK 26N60Q IXFX 26N60Q VDSS ID25 RDS on Q-Class = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	26N60Q 247TM O-264 728B1 26n60 26N60Q k 2134	PDF
Contextual Info: n ix Y S Advanced Technical Information HiPerFET Power MOSFETs V DSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr D DS on ^D25 600 V 26 A 600 V 28 A trr < 250 ns 0.25 Q 0.25 Q Maximum Ratings IXFH/IXFT	OCR Scan	26N60/IXFT 26N60 28N60 O-247	PDF
5007a Contextual Info: IXTH 26N60P IXTQ 26N60P IXTT 26N50P IXTV 26N60P IXTV 26N60PS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 26 A RDS on ≤ 270 m Ω TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C	Original	26N60P 26N50P 26N60PS O-247 O-268 26N60P 5007a	PDF
Contextual Info: PolarHVTM Power MOSFET VDSS = 800 V ID25 = 16 A Ω RDS on ≤ 600 mΩ ≤ 250 ns trr IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS	Original	16N80P 16N80PS O-247 26N60P 26N60P 26N60PS	PDF
transistor 12n60c Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design	Original	ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET	PDF
12N60c equivalent Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q Contextual Info: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t	OCR Scan	ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q	PDF

26N60 Search Results

26N60 Price and Stock

STMicroelectronics STL26N60DM6

Vishay Intertechnologies SIHH26N60EF-T1-GE3

STMicroelectronics STB26N60M2

Vishay Intertechnologies SIHG026N60EF-GE3

STMicroelectronics STW26N60M2

26N60 Datasheets Context Search

26N60P

26n60q

26n60

26N60Q

26n60

max2678

DSA003703

26N60P

26N60Q

26N60Q

26N60Q

spf560

26N60Q

26N60

26n60q

26n60

5007a

transistor 12n60c

12N60c equivalent