26N50P Search Results

26n50

Abstract: IXFH .26n50 PLUS220SMD
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ

PLUS220SMD

Contextual Info: PolarHVTM Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS ID25 RDS on trr = = ≤ ≤ 500 V 26 A Ω 230 mΩ 200 ns Avalanche Rated Fast Instrinsic Diode Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS on = 260 mΩ Electrically Isolated Tab, N-Channel Enhancement Mode, Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: PolarHVTM Power MOSFET ISOPLUS220TM IXTC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS on ≤ 260 mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ

Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 26N50P VDSS = = ID25 RDS on ≤ ≤ trr (Electrically Isolated Tab) 500 V 15 A Ω 260 mΩ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS = ID25 = RDS on ≤ ≤ trr IXFH 26N50P IXFV 26N50P IXFV 26N50PS N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ

IXTQ26N50P

Abstract: PLUS220SMD 26n50ps b5237
Contextual Info: Advanced Technical Information IXTQ 26N50P IXTV 26N50P IXTV 26N50PS PolarHVTM Power MOSFET VDSS ID25 = 500 V = 26 A ≤ 230 mΩ Ω RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

26N50P

Abstract: IXTQ26N50P ixtq-26n50p IXTQ 26N50P IXTV26N50PS PLUS220SMD ixtt26n50p
Contextual Info: IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS PolarHVTM Power MOSFET VDSS ID25 = = ≤ RDS on 500 26 230 V A Ω mΩ N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ

t26n

Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 26N50P VDSS = = ID25 RDS on ≤ ≤ trr (Electrically Isolated Tab) 500 V 15 A Ω 260 mΩ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFH 26N50P IXFT 26N50P RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode = = ≤ ≤ 500 V 26 A Ω 230 mΩ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500

Contextual Info: IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS PolarHVTM Power MOSFET VDSS ID25 = = ≤ RDS on 500 26 230 V A Ω mΩ N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR

5007a

Contextual Info: IXTH 26N60P IXTQ 26N60P IXTT 26N50P IXTV 26N60P IXTV 26N60PS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 26 A RDS on ≤ 270 m Ω TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C

Contextual Info: Advanced Technical Information PolarHVTM Power MOSFET IXTC 26N50P VDSS = 500 V = 13 A ID25 Ω RDS on = 260 mΩ Electrically Isolated Tab, N-Channel Enhancement Mode, Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V

t26n

Abstract: 7V24
Contextual Info: PolarHVTM Power MOSFET ISOPLUS220TM IXTC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS on ≤ 260 mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

STW20N60

Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal