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CTS Corporation 526N50020DTR - Tape and Reel (Alt: 526N50020DTR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	526N50020DTR	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SIPC26N50C3X1SA2 - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIPC26N50C3X1SA2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIPC26N50C3X1SA2	Waffle Pack			169	1 - 10 - 100 - 1000 - 10000 -	Get Quote
CTS Corporation 526N50025ITR - Tape and Reel (Alt: 526N50025ITR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	526N50025ITR	Tape & Reel		10 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $1.91	Buy Now
CTS Corporation 526N50025CTR - Tape and Reel (Alt: 526N50025CTR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	526N50025CTR	Tape & Reel		10 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $1.91	Buy Now
CTS Corporation 526N50020CTR - Tape and Reel (Alt: 526N50020CTR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	526N50020CTR	Tape & Reel		10 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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26N50 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ixf26n50q Abstract: 24N50 26N50Q 125OC ixf26N50 Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	24n50q 26n50q 125oc 728b1 +3ixf26n50q 24n50 ixf26n50	PDF
24N50 Abstract: 26N50 .24n50 IXFH26N50 IXFR24N50 IXFR26N50 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	26n50 isoplus247tm 24n50 247tm +3ixfr26n50 ixfr24n50 ixfh26n50	PDF
26N50 Abstract: IXFC 26N50 IXFH26N50 24N50 ixfc26n50 .26n50 .24n50 IXFC24N50 Contextual Info: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface IXFC 26N50 IXFC 24N50 ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM	Original	isoplus220tm 26n50 24n50 220lvtm +6ixfc26n50 ixfc24n50 ixfh26n50 728b1 123b1 ixfc 26n50	PDF
Contextual Info: Photoelectric sensors FHDK 26N5001/S14 Diffuse sensors with background suppression dimension drawing 58 40 Pot LED 5,5 80 62 * 13 5,5 25,2 5,5 M12 x 1 24,3 13 8 8 * emitter axis general data photo type background suppression light source pulsed infrared diode	Original	26n5001/s14	PDF
Contextual Info: Photoelectric sensors FHDK 26N5001/S14 Diffuse sensors with background suppression dimension drawing 58 40 Pot LED 5,5 80 62 * 13 5,5 25,2 5,5 M12 x 1 24,3 13 8 8 * emitter axis general data type photo background suppression light source pulsed infrared diode	Original	26n5001/s14	PDF
ixfh26n50q Abstract: 26N50 IXFC 26N50 Contextual Info: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50Q IXFC 24N50Q Electrically Isolated Back Surface ID25 RDS on 0.20 Ω 0.23 Ω 500 V 23 A 500 V 21 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	isoplus220tm 26n50q 24n50q 220tm +426n50 24n50 ixfh26n50q ixfc 26n50	PDF
26n50 Abstract: IXFH .26n50 PLUS220SMD Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	26n50p 26n50ps 26n50 ixfh +1plus220smd	PDF
PLUS220SMD Contextual Info: PolarHVTM Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS ID25 RDS on trr = = ≤ ≤ 500 V 26 A Ω 230 mΩ 200 ns Avalanche Rated Fast Instrinsic Diode Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	26n50p 26n50ps o-247 plus220smd	PDF
24n50 Abstract: IXFH26N50Q A24N50 .24n50 26N50 ISOPLUS247 IXFR24N50Q IXFR26N50Q SST250 Contextual Info: □IXYS Advanced Technical Information V DSS HiPerFET Power MOSFETs IXFR ISOPLUS247™ 26N50Q IXFR 24N50Q Electrically Isolated Back Surface D ^D25 24 A 500 V 22 A 500 V t rr < 250 ns DS(on) 0.20 Q 0.23 Q N-Channel Enhancement Mode HighdV/dt, Lowtrr, HDMOS™ Family	OCR Scan	isoplus247 26n50q 24n50q 26n50 +624n50 ixfr26n50q ixfh26n50q a24n50 ixfr24n50q sst250	PDF
Contextual Info: Photoelectric sensors FHDK 26N5001/S14 Diffuse sensors with background suppression dimension drawing 58 40 Pot LED 5,5 80 62 * 13 5,5 25,2 5,5 13 8 8 M12 x 1 24,3 * emitter axis general data photo type background suppression light source pulsed infrared diode	Original	26n5001/s14	PDF
26N50 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	26n50 isoplus247tm 24n50 ixfr26n50	PDF
ixf26N50 Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	24n50q 26n50q o-240 125oc +2728b1 ixf26n50	PDF
26n50 Abstract: .24n50 24n50 ixfc26n50 IXFC24N50 IXFH26N50 W26-1 Ixfc 26n50 Contextual Info: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50 IXFC 24N50 Electrically Isolated Back Surface ID25 500 V 23 A 500 V 21 A trr ≤ 250 ns RDS on 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Symbol	Original	isoplus220tm 26n50 24n50 220tm +5ixfc26n50 ixfc24n50 ixfh26n50 w26-1 ixfc 26n50	PDF
26N80Q Abstract: 26N80 Contextual Info: dIXYS Advanced Technical Information HiPerFET Power MOSFETs IXFH 26N50Q IXFT 26N50Q Q-Class Symbol Test Conditions Maximum Ratings VDSS Td = 25° C to 150° C 500 V Voon Tj = 25° C to 150°C; RGS= 1 MQ 500 V Vos Continuous ±20 V Transient ±30 V osm '* 5	OCR Scan	26n50q ul94v-0 10transientthermal 26n80q +126n80	PDF

Contextual Info: Photoelectric sensors FHDK 26N5001/S14 Diffuse sensors with background suppression dimension drawing 58 40 Pot LED 5,5 80 62 * 13 5,5 25,2 5,5 M12 x 1 24,3 13 8 8 * emitter axis general data photo type background suppression light source pulsed infrared diode	Original	26n5001/s14	PDF
26N50 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS 26N50 IXFR 24N50 Electrically Isolated Back Surface ID25 500 V 24 A 500 V 22 A trr £ 250 ns RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	isoplus247tm 26n50 24n50 ixfr26n50	PDF
26N50 Contextual Info: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50Q IXFC 24N50Q Electrically Isolated Back Surface ID25 500 V 23 A 500 V 21 A trr ≤ 250 ns RDS on 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	isoplus220tm 26n50q 24n50q 26n50 +224n50 ixfc26n50q	PDF
26N50Q Abstract: IXFH26N50Q 24N50Q Contextual Info: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS 26N50Q IXFR 24N50Q Electrically Isolated Back Surface ID25 RDS(on) 500 V 24 A 500 V 22 A trr £ 250 ns 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol	Original	isoplus247tm 26n50q 24n50q ixfr26n50q +1ixfh26n50q	PDF
26N50 Contextual Info: HiPerFETTM Power MOSFETs IXFH 26N50Q IXFT 26N50Q Q-Class VDSS ID25 RDS on = 500 V = 26 A = 0.20 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	o-247 o-268 26n50q o-24eristic +2125oc 26n50	PDF
Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS on = 260 mΩ Electrically Isolated Tab, N-Channel Enhancement Mode, Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS	Original	26n50p	PDF
Contextual Info: PolarHVTM Power MOSFET ISOPLUS220TM IXTC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS on ≤ 260 mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	isoplus220tm 26n50p isolated55 2-06-05-a	PDF
Contextual Info: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50 IXFC 24N50 Electrically Isolated Back Surface ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM	Original	isoplus220tm 26n50 24n50 220lvtm +5ixfc26n50 ixfc24n50 ixfh26n50 728b1 123b1	PDF
Contextual Info: Photoelectric sensors FHDK 26N5001/S14 Diffuse sensors with background suppression dimension drawing 58 40 Pot LED 5,5 80 62 * 13 5,5 25,2 5,5 M12 x 1 24,3 13 8 8 * emitter axis general data photo type background suppression light source pulsed infrared diode	Original	26n5001/s14	PDF
Contextual Info: Photoelectric sensors FHDK 26N5001/S14 Diffuse sensors with background suppression dimension drawing 58 40 Pot LED 5,5 80 62 * 13 5,5 25,2 5,5 M12 x 1 24,3 13 8 8 * emitter axis general data photo type background suppression light source pulsed infrared diode	Original	26n5001/s14	PDF

26N50 Search Results

26N50 Price and Stock

CTS Corporation 526N50020DTR

Infineon Technologies AG SIPC26N50C3X1SA2

CTS Corporation 526N50025ITR

CTS Corporation 526N50025CTR

CTS Corporation 526N50020CTR

26N50 Datasheets Context Search

ixf26n50q

24N50

26N50

ixfh26n50q

26n50

PLUS220SMD

24n50

26N50

ixf26N50

26n50

26N80Q

26N50

26N50

26N50Q

26N50