220TM Search Results

ixys dsi

Abstract: 30-08AC 30-12AC ir 2411
Contextual Info: DSI 30 Rectifier Diode 220TM VRRM = 800 - 1200 V IF AV M = 30 A Electrically Isolated Back Surface VRSM VRRM V V 900 1300 800 1200 Type ISOPLUS 220TM DSI 30-08AC DSI 30-12AC A C Preliminary Data Sheet C A Symbol IFRMS IFAV IFSM I2t Conditions Maximum Ratings

IXUC160N075

Contextual Info: ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC160N075 VDSS = 75 V ID25 = 160 A Ω RDS on = 6.5 mΩ 220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C 75 V VGS Continuous

52N30

Abstract: 52N30P IXFC52N30P 1M300 52APF
Contextual Info: IXFC52N30P PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300V 24A Ω 75mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: CS 29 Phase Control Thyristor VRRM = 800/1200 V IT RMS = 35 A IT(AV)M = 23 A 220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 29-08io1C CS 29-12io1C G C A G Isolated back surface*

STE30NA50-DK

Abstract: ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220
Contextual Info: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 ISOWATT 220TM Fully isolated TO-220 220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000

IXFC24N50

Abstract: IXFH24N50
Contextual Info: ADVANCED TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC24N50 VDSS ID25 RDS on trr 220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V Maximum Ratings

Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFC16N50P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 500V 10A Ω 450mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings

Contextual Info: CS 29 Phase Control Thyristor VRRM = 800/1200 V IT RMS = 35 A IT(AV)M = 23 A 220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 ISOPLUS 220TM Type A 800 1200 C CS 29-08io1C CS 29-12io1C G TVJ = TVJM TC = 95°C; 180° sine (IT(RMS) current limit)

13N50

Abstract: IXTH12N50A
Contextual Info: Power MOSFET IXTC 13N50 VDSS = 500 V ID25 = 12 A RDS on = 0.4 Ω 220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary Data Sheet ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS

IXUC200N055

Abstract: 123B16
Contextual Info: ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC200N055 VDSS = 55 V ID25 = 200 A Ω RDS on = 5.1 mΩ 220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 55 V VGS Continuous

Z 728

Abstract: 15N80Q IXFH15N80Q 15N80
Contextual Info: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg 220TM Symbol Test Conditions Maximum Ratings

Phase-leg Rectifier Diode

Contextual Info: DSP 8 Phase-leg Rectifier Diode VRRM = 800/1200 V IF AV M = 2 x 11 A 220TM Electrically Isolated Back Surface VRSM VRRM V V 900 1300 800 1200 Type ISOPLUS 220TM E153432 DSP 8-08AC DSP 8-12AC Preliminary Data Sheet 1 2 3 Isolated back surface* Symbol

IGD 001

Contextual Info: CS 29 Phase Control Thyristor VRRM = 800/1200 V IT RMS = 35 A IT(AV)M = 23 A 220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 29-08io1C CS 29-12io1C G Isolated back surface*

60n10

Contextual Info: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 60 A Ω RDS on = 16.4 mΩ ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VGS Continuous

Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFC14N60P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 600V 8A Ω 630mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings

Contextual Info: CS 19 ADVANCE TECHNICAL INFORMATION VRRM IT RMS IT(AV)M Phase Control Thyristor 220TM = 800 - 1200 V = 35 A = 13 A Electrically Isolated Back Surface VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 19-08ho1C CS 19-12ho1C G G Test Conditions

IXFC14N60P

Abstract: 14n60 T14n
Contextual Info: IXFC14N60P PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 600V 8A Ω 630mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings

CS19

Contextual Info: CS 19 ADVANCE TECHNICAL INFORMATION VRRM IT RMS IT(AV)M Phase Control Thyristor 220TM = 800 - 1200 V = 35 A = 13 A Electrically Isolated Back Surface VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 19-08ho1C CS 19-12ho1C G C Symbol

Contextual Info: HiPerDynFREDTM Epitaxial Diode IFAV VRRM trr 220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VRRM V V 600 600 600 600 DSEA ISOPLUS 220TM Type 1 DSEC 2 3 DSEA 16-06AC DSEC 16-06AC G 1 Symbol 2 Conditions 3 TC = 120°C; rectangular, d = 0.5

IXUC100N055

Contextual Info: ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC100N055 VDSS = 55 V ID25 = 100 A RDS on = 7.7 mW 220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 55 V VGS Continuous ±20

Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 26N50P VDSS = = ID25 RDS on ≤ ≤ trr (Electrically Isolated Tab) 500 V 15 A Ω 260 mΩ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 14N80P VDSS = 800 V = 8 A ID25 Ω RDS on ≤ 770 mΩ ≤ 250 ns trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS

96N15P

Abstract: TEm 2411
Contextual Info: PolarHTTM HiPerFET Power MOSFET 220TM VDSS = 150 V ID25 = 42 A Ω RDS on = 26 mΩ < 200 ns trr IXFC 96N15P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated ISOPLUS 220TM E153432 Symbol Test Conditions

CS19

Contextual Info: CS 19 ADVANCE TECHNICAL INFORMATION = 800 - 1200 V = 35 A = 13 A VRRM IT RMS IT(AV)M Phase Control Thyristor 220TM Electrically Isolated Back Surface VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 19-08ho1C CS 19-12ho1C G G Symbol