13N50 Search Results

13N50

Abstract: 125OC FIGURE10
Contextual Info: HiPerFETTM Power MOSFETs IXFJ 13N50 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient

13N50

Abstract: IXTH12N50A
Contextual Info: Power MOSFET IXTC 13N50 VDSS = 500 V ID25 = 12 A RDS on = 0.4 Ω ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary Data Sheet ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: nixYS IXFH 13N50 IXFM 13N50 V DSS = 500 V HiPerFET Power MOSFET I = 13 A N-Channel E nhancem ent Mode High dv/dt, L o w t , HDMOS™ Family FtDS on = 0.4 £1 t Test Conditions V DSS V DGR ^ = 25°C to 150°C 500 V ^ = 25°C to 150°C; RGS = 1 M£i 500

Contextual Info: □ IXYS HiPerFET IXFJ 13N50 V DSS Power MOSFETs ^D cont D DS(on) N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family Symbol t rr Tj = 25°C to 150°C 500 V v DGR Tj = 25°C to 150°C; RGS = 1 Mß 500 V V GS Continuous ±20 V VGSM Transient

13N50

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can

13n50g

Abstract: 13N50
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13N50 Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and

13N50 equivalent

Abstract: 13N50 IXFH13N50
Contextual Info: Power MOSFET IXTC 13N50 VDSS = 500 V ID25 = 12 A RDS on = 0.4 Ω ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary Data Sheet ISOPLUS220TM Symbol Test Conditions Maximum Ratings VDSS

ixfh13n50

Contextual Info: nixYS HiPerFET Power MOSFETs IXFH 13N50 VDSS I D cont P DS(on) = 500 V = 13 A = 0.4 Q <250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family $8 Maximum Ratings Symbol Test Conditions V DSS ^ =25°Cto 150°C 500 V v DGR ^ = 25° C to 150° C; RGS= 1 M£2

13n50

Abstract: IXYS DS 145 MAX1352
Contextual Info: gixYS HiPerFET Power MOSFETs IXFJ 13N50 VDSS = 500 V iD cont = 13 A \ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Test Conditions VDSS Tj =25°Cto150°C 500 V VDGR T j = 25° C to 150° C; RQS= 1 M£2 500 V Vos v GSM Continuous ±20

Contextual Info: HiPerFETTM Power MOSFETs IXFJ 13N50 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions V A W ns Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous

13N50

Abstract: 13N50 equivalent 13n50g QW-R502-362 13N50G-TF1-T 362 MOSFET
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION 1 The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13N50K-MT Preliminary Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 13N50K-MT is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13N50K Preliminary Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 13N50K is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and

Contextual Info: HiPerFETTM Power MOSFETs IXFJ 13N50 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient

AP13N50W

Contextual Info: 13N50W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 500V RDS ON 0.52Ω ID G 14A S Description Advanced Power MOSFETs from APEC provide the designer with

13N50c

Contextual Info: QFET 13N50C/13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

3590S-491-103

Abstract: 23n50 13N50
Contextual Info: BLF6G15L-40BRN Power LDMOS transistor Rev. 1 — 14 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

13N50 equivalent

Abstract: 13N50 equivalent of 13N50 3VD499500YL
Contextual Info: 3VD499500YL 3VD499500YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD499500YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced voltageblocking capability;

23N50

Contextual Info: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 — 12 August 2010 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance

13N50

Contextual Info: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 W trr £ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

Contextual Info: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance

mosfet 4400

Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
Contextual Info: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,

13N50

Abstract: C405E3
Contextual Info: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C405E3 Issued Date : 2008.12.01 Revised Date : Page No. : 1/8 BVDSS : 500V RDS ON : 0.48Ω 13N50E3 ID : 13A Description The 13N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best

13N50 equivalent

Abstract: 3VD499500YL 13N50 500VMOS
Contextual Info: 3VD499500YL 3VD499500YL 高压MOSFET芯片 描述 Ø 3VD499500YL为采用硅外延工艺制造的N沟道增强型 500V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；