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IXYS Corporation


IXYS Corporation IXFH26N50P MOSFETs HiPERFET Id26 BVdass500
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFH26N50P		3,493			1 $9.08 10 $5.36 100 $5.36 1000 $4.52 10000 $4.52	Buy Now
TTI	IXFH26N50P	Tube			300	1 - 10 - 100 - 1000 $3.47 10000 $3.47	Buy Now
IXYS Corporation IXFH26N50P3 MOSFETs Polar3 HiPerFET Power MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFH26N50P3		1,113			1 $8.99 10 $5.28 100 $5.28 1000 $4.01 10000 $4.00	Buy Now
TTI	IXFH26N50P3	Tube	180		30	1 - 10 - 100 $4.57 1000 $4.05 10000 $4.00	Buy Now
IXYS Corporation IXFQ26N50P3 MOSFETs Polar3 HiPerFET Power MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFQ26N50P3		286			1 $8.16 10 $5.93 100 $5.93 1000 $4.21 10000 $4.21	Buy Now
TTI	IXFQ26N50P3	Tube			300	1 - 10 - 100 - 1000 $4.15 10000 $4.15	Buy Now
IXYS Corporation IXTQ26N50P MOSFETs 26.0 Amps 500 V 0.23 Ohm Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTQ26N50P		263			1 $6.54 10 $4.74 100 $4.74 1000 $4.23 10000 $4.23	Buy Now
TTI	IXTQ26N50P	Tube	270		30	1 - 10 - 100 $4.13 1000 $3.69 10000 $3.65	Buy Now
IXYS Corporation IXFP26N50P3 MOSFETs Polar3 HiPerFET Power MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFP26N50P3		252			1 $9.99 10 $5.55 100 $5.33 1000 $5.33 10000 $5.33	Buy Now
TTI	IXFP26N50P3	Tube			300	1 - 10 - 100 - 1000 $5.12 10000 $5.12	Buy Now

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26N50P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
26n50 Abstract: IXFH .26n50 PLUS220SMD Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	26N50P 26N50PS 26n50 IXFH .26n50 PLUS220SMD	PDF
PLUS220SMD Contextual Info: PolarHVTM Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS ID25 RDS on trr = = ≤ ≤ 500 V 26 A Ω 230 mΩ 200 ns Avalanche Rated Fast Instrinsic Diode Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	26N50P 26N50PS O-247) PLUS220SMD	PDF
Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS on = 260 mΩ Electrically Isolated Tab, N-Channel Enhancement Mode, Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS	Original	26N50P	PDF
Contextual Info: PolarHVTM Power MOSFET ISOPLUS220TM IXTC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS on ≤ 260 mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	ISOPLUS220TM 26N50P Isolated55 2-06-05-A	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 26N50P VDSS = = ID25 RDS on ≤ ≤ trr (Electrically Isolated Tab) 500 V 15 A Ω 260 mΩ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS	Original	220TM 26N50P 02-09-06-B	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS = ID25 = RDS on ≤ ≤ trr IXFH 26N50P IXFV 26N50P IXFV 26N50PS N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	26N50P 26N50PS	PDF
IXTQ26N50P Abstract: PLUS220SMD 26n50ps b5237 Contextual Info: Advanced Technical Information IXTQ 26N50P IXTV 26N50P IXTV 26N50PS PolarHVTM Power MOSFET VDSS ID25 = 500 V = 26 A ≤ 230 mΩ Ω RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	26N50P 26N50PS 15noCoulombs 26N50P IXTQ26N50P PLUS220SMD 26n50ps b5237	PDF
26N50P Abstract: IXTQ26N50P ixtq-26n50p IXTQ 26N50P IXTV26N50PS PLUS220SMD ixtt26n50p Contextual Info: IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS PolarHVTM Power MOSFET VDSS ID25 = = ≤ RDS on 500 26 230 V A Ω mΩ N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	26N50P 26N50PS 26N50P IXTV26N50PS O-268 IXTQ26N50P ixtq-26n50p IXTQ 26N50P IXTV26N50PS PLUS220SMD ixtt26n50p	PDF
t26n Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 26N50P VDSS = = ID25 RDS on ≤ ≤ trr (Electrically Isolated Tab) 500 V 15 A Ω 260 mΩ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS	Original	220TM 26N50P 02-09-06-B t26n	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFH 26N50P IXFT 26N50P RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode = = ≤ ≤ 500 V 26 A Ω 230 mΩ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500	Original	26N50P 26N50P O-247 O-268	PDF
Contextual Info: IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS PolarHVTM Power MOSFET VDSS ID25 = = ≤ RDS on 500 26 230 V A Ω mΩ N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR	Original	26N50P 26N50PS PLUS220 26N50P IXTV26N50PS O-268	PDF
5007a Contextual Info: IXTH 26N60P IXTQ 26N60P IXTT 26N50P IXTV 26N60P IXTV 26N60PS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 26 A RDS on ≤ 270 m Ω TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C	Original	26N60P 26N50P 26N60PS O-247 O-268 26N60P 5007a	PDF
Contextual Info: Advanced Technical Information PolarHVTM Power MOSFET IXTC 26N50P VDSS = 500 V = 13 A ID25 Ω RDS on = 260 mΩ Electrically Isolated Tab, N-Channel Enhancement Mode, Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V	Original	26N50P	PDF
t26n Abstract: 7V24 Contextual Info: PolarHVTM Power MOSFET ISOPLUS220TM IXTC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS on ≤ 260 mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	ISOPLUS220TM 26N50P 2-06-05-A t26n 7V24	PDF

7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p	PDF

26N50P Search Results

26N50P Price and Stock

IXYS Corporation IXFH26N50P

IXYS Corporation IXFH26N50P3

IXYS Corporation IXFQ26N50P3

IXYS Corporation IXTQ26N50P

IXYS Corporation IXFP26N50P3

26N50P Datasheets Context Search

26n50

PLUS220SMD

IXTQ26N50P

26N50P

t26n

5007a

t26n

7N60B equivalent

STW20N60