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    26N50P Search Results

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    26N50P Price and Stock

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    Littelfuse Inc IXFH26N50P

    Discmosfetn-Ch Hiperfet-Polar To-247Ad Tube Rohs Compliant: Yes |Littelfuse IXFH26N50P
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    Newark IXFH26N50P Bulk 298 1
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    Master Electronics IXFH26N50P 300
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    IXYS Corporation IXFH26N50P

    Mosfet, N-Ch, 500V, 26A, To-247; |Ixys Semiconductor IXFH26N50P
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    Newark IXFH26N50P Bulk 265 1
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    TTI IXFH26N50P Tube 5,370 30
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    Bristol Electronics IXFH26N50P 90 1
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    TME IXFH26N50P 300
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    Littelfuse Inc IXTT26N50P

    Mosfet, N-Ch, 500V, 26A, To-268-3; |Littelfuse IXTT26N50P
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    Littelfuse Inc IXTQ26N50P

    Disc Mosfet N-Ch Std-Polar To-3P (3)/ Tu; |Littelfuse IXTQ26N50P
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    Master Electronics IXTQ26N50P 4
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    Littelfuse Inc IXFA26N50P3

    Mosfet, N-Ch,500V, 26A, To-263; |Littelfuse IXFA26N50P3
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    Newark () IXFA26N50P3 Bulk 1
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    IXFA26N50P3 Bulk 300
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    RS IXFA26N50P3 Bulk 8 Weeks 50
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    26N50P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    26n50

    Abstract: IXFH .26n50 PLUS220SMD
    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


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    26n50p26n50ps26n50ixfh+1plus220smd PDF

    PLUS220SMD

    Contextual Info: PolarHVTM Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS ID25 RDS on trr = = ≤ ≤ 500 V 26 A Ω 230 mΩ 200 ns Avalanche Rated Fast Instrinsic Diode Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    26n50p26n50pso-247plus220smd PDF

    Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS on = 260 mΩ Electrically Isolated Tab, N-Channel Enhancement Mode, Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS


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    26n50p PDF

    Contextual Info: PolarHVTM Power MOSFET ISOPLUS220TM IXTC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS on ≤ 260 mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


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    isoplus220tm26n50pisolated552-06-05-a PDF

    Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 26N50P VDSS = = ID25 RDS on ≤ ≤ trr (Electrically Isolated Tab) 500 V 15 A Ω 260 mΩ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS


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    220tm26n50p02-09-06-b PDF

    Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS = ID25 = RDS on ≤ ≤ trr IXFH 26N50P IXFV 26N50P IXFV 26N50PS N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


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    26n50p26n50ps PDF

    IXTQ26N50P

    Abstract: PLUS220SMD 26n50ps b5237
    Contextual Info: Advanced Technical Information IXTQ 26N50P IXTV 26N50P IXTV 26N50PS PolarHVTM Power MOSFET VDSS ID25 = 500 V = 26 A ≤ 230 mΩ Ω RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    26n50p26n50ps15nocoulombsixtq26n50p+2plus220smdb5237 PDF

    26N50P

    Abstract: IXTQ26N50P ixtq-26n50p IXTQ 26N50P IXTV26N50PS PLUS220SMD ixtt26n50p
    Contextual Info: IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS PolarHVTM Power MOSFET VDSS ID25 = = ≤ RDS on 500 26 230 V A Ω mΩ N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


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    26n50p26n50psixtv26n50pso-268+5ixtq26n50pixtq-26n50pixtq 26n50pplus220smdixtt26n50p PDF

    t26n

    Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 26N50P VDSS = = ID25 RDS on ≤ ≤ trr (Electrically Isolated Tab) 500 V 15 A Ω 260 mΩ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS


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    220tm26n50p02-09-06-bt26n PDF

    Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFH 26N50P IXFT 26N50P RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode = = ≤ ≤ 500 V 26 A Ω 230 mΩ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500


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    26n50po-247o-268 PDF

    Contextual Info: IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS PolarHVTM Power MOSFET VDSS ID25 = = ≤ RDS on 500 26 230 V A Ω mΩ N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR


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    26n50p26n50psplus220ixtv26n50ps+1o-268 PDF

    5007a

    Contextual Info: IXTH 26N60P IXTQ 26N60P IXTT 26N50P IXTV 26N60P IXTV 26N60PS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 26 A RDS on ≤ 270 m Ω TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


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    26n60p26n50p26n60pso-247+2o-2685007a PDF

    Contextual Info: Advanced Technical Information PolarHVTM Power MOSFET IXTC 26N50P VDSS = 500 V = 13 A ID25 Ω RDS on = 260 mΩ Electrically Isolated Tab, N-Channel Enhancement Mode, Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V


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    26n50p PDF

    t26n

    Abstract: 7V24
    Contextual Info: PolarHVTM Power MOSFET ISOPLUS220TM IXTC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS on ≤ 260 mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


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    isoplus220tm26n50p2-06-05-at26n+17v24 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


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    o-220isoplus220tmo-247isoplus247tm+15o-264isoplus264tmplus220plus220smdo-252stw20n602n60pixfb100n50ixfb100n50pstw20n60fdixfb100n50p to-264ixys ixfn100n50pixfn48n60pixfh30n60pixfn100n50p PDF