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IXFH Datasheets (335)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFH100N25P	IXYS	PolarHT HiPerFET Power MOSFET	Original	PDF	86.16KB	5
IXFH100N30X3	IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 300V/100A ULTRA JUNCTION X3-CLAS	Original	PDF	259.11KB
IXFH102N15T	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 102A TO-247	Original	PDF		6
IXFH10N100	IXYS	HiPerFET Power MOSFET	Original	PDF	579.94KB	4
IXFH10N100	IXYS	1000V HiPerFET power MOSFET	Original	PDF	238.42KB	4
IXFH10N100	IXYS	HiperFET Power MOSFETS	Scan	PDF	697.9KB	8
IXFH10N100	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	76.62KB	1
IXFH10N100P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1KV 10A TO-247AD	Original	PDF		4
IXFH10N100Q	IXYS	HiPerFETTM Power MOSFETs Q Class	Original	PDF	145.94KB	4
IXFH10N100Q	IXYS	HiPerFET Power MOSFET	Original	PDF	145.94KB	4
IXFH10N60	IXYS	HiperFET Power MOSFETS	Scan	PDF	697.9KB	8
IXFH10N65	IXYS	HiperFET Power MOSFETS	Scan	PDF	697.9KB	8
IXFH10N80P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 10A TO-247	Original	PDF		5
IXFH10N90	IXYS	900V HiPerFET power MOSFET	Original	PDF	86.36KB	4

IXFH10N90	IXYS	HiperFET Power MOSFETS	Scan	PDF	697.9KB	8
IXFH10N90	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	76.62KB	1
IXFH110N10P	IXYS	PolarHT HiPerFET Power MOSFET	Original	PDF	162.47KB	5
IXFH110N15T2	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 110A TO-247	Original	PDF		6
IXFH110N25T	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 110A TO-247	Original	PDF		5
IXFH11N100	IXYS	HiperFET Power MOSFETS	Scan	PDF	697.9KB	8

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IXYS Corporation


IXYS Corporation IXFH18N60P Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFH18N60P		300		1	1 $8.21 10 $5.32 100 $4.55 1000 $4.39 10000 $4.39	Buy Now
IXYS Corporation IXFH22N60P Transistor: N-MOSFET; unipolar; 600V; 22A; 400W; TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFH22N60P		288		1	1 $8.00 10 $6.35 100 $5.93 1000 $5.93 10000 $5.93	Buy Now
Mouser Electronics	IXFH22N60P		717			1 $10.93 10 $6.71 100 $6.71 1000 $5.36 10000 $5.36	Buy Now
IXYS Corporation IXFH24N90P Transistor: N-MOSFET; unipolar; 900V; 24A; 660W; TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFH24N90P		225		1	1 $14.54 10 $12.19 100 $10.99 1000 $10.16 10000 $10.16	Buy Now
Verical	IXFH24N90P		225		4	1 - 10 $12.62 100 $11.68 1000 $11.68 10000 $11.68	Buy Now
IXYS Corporation IXFH34N65X2 Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFH34N65X2		153		1	1 $6.23 10 $5.16 100 $4.82 1000 $4.45 10000 $4.45	Buy Now
Newark	IXFH34N65X2	Bulk	24		1	1 $13.31 10 $11.80 100 $8.22 1000 $7.61 10000 $7.61	Buy Now
IXYS Corporation IXFH30N50P Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFH30N50P		31		1	1 $11.09 10 $7.70 100 $6.00 1000 $6.00 10000 $6.00	Buy Now
Newark	IXFH30N50P	Bulk	14		1	1 $12.08 10 $9.36 100 $6.64 1000 $5.90 10000 $5.40	Buy Now

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IXFH Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
17n80 Abstract: 17N80Q Contextual Info: HiPerFETTM Power MOSFETs IXFH 17N80Q IXFT 17N80Q VDSS ID25 RDS on Q-Class = 800 V = 17 A = 0.60 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	17n80q o-268 728b1 123b1 +2065b1 17n80	PDF
58N2 Abstract: 58N20 Contextual Info: HiPerFETTM Power MOSFETs IXFH 58N20Q IXFT 58N20Q VDSS ID25 RDS on Q-Class = 200 V = 58 A = 40 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	58n20q o-268 58n2 58n20	PDF
ixf26n50q Abstract: 24N50 26N50Q 125OC ixf26N50 Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	24n50q 26n50q 125oc 728b1 +3ixf26n50q 24n50 ixf26n50	PDF
80N10 Abstract: 80N10Q Contextual Info: HiPerFETTM Power MOSFETs IXFH 80N10Q IXFT 80N10Q VDSS ID25 = 100 V = 80 A = 15 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	80n10q 200ns o-247 80n10	PDF
IXFH23N80Q Abstract: transistor N 343 AD Contextual Info: HiPerFETTM Power MOSFETs IXFH23N80Q IXFT23N80Q VDSS = 800 V = 23 A ID25 RDS on = 0.42 Ω Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	ixfh23n80q ixft23n80q 728b1 123b1 +2065b1 transistor n 343 ad	PDF
40N30Q Abstract: IXYS 40N30Q Contextual Info: HiPerFETTM Power MOSFETs IXFH 40N30Q IXFT 40N30Q Q-Class VDSS ID25 = 300 V = 40 A = 80 mW £ 250 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	40n30q o-268 ixys 40n30q	PDF
IXFH15N80 Abstract: 15n80 14N80 DS965 IXFH14N80 125OC Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH14N80 IXFH15N80 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient	Original	ixfh14n80 ixfh15n80 14n80 15n80 +3125oc 728b1 ds965	PDF
28N50F Abstract: 28N50 Contextual Info: Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFH 28N50F VDSS IXFT 28N50F ID25 RDS on = 500V = 28A Ω = 190mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr	Original	28n50f o-247 728b1 28n50	PDF
52N30 Abstract: IXFH 52N30q 52N30Q TO264 footprint Contextual Info: HiPerFETTM Power MOSFETs IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances VDSS ID25 = 300 V = 52 A = 60 mW £ 250 ns RDS on trr Preliminary data Symbol Test Conditions	Original	52n30q 52n30 ixfh 52n30q to264 footprint	PDF
Contextual Info: HiPerFETTM Power MOSFETs VDSS ID25 IXFH 80N15Q IXFK 80N15Q IXFT 80N15Q Q-Class = 150 V = 80 A = 22.5 mW £ 200 ns RDS on t rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS	Original	80n15q	PDF
22N55 Contextual Info: HiPerFETTM Power MOSFET IXFH 22 N55 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr = 550 V = 22 A = 0.27 W £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 550 V VDGR TJ = 25°C to 150°C; RGS = 1 MW	Original	22n55	PDF
10N100 Abstract: 12n100 N100 Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 1000 V 1000 V Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C	Original	10n100 12n100 n100	PDF
40N30 Abstract: 35n30 FM40N30 IXFH40N30 Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 300 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous	Original	35n30 40n30 fm40n30 ixfh40n30	PDF
IXFH110N10P Abstract: 110N10P Contextual Info: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 110N10P IXFV 110N10P IXFV 110N10PS VDSS ID25 RDS on Preliminary Data Sheet TO-247 (IXFH) Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ	Original	110n10p 110n10ps o-247 10oulombs +1ixfh110n10p	PDF

Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N60P IXFT 36N60P IXFK 36N60P VDSS ID25 RDS on t rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 600 V = 36 A ≤ 190 mΩ Ω ≤ 250 ns Preliminary Data Sheet Symbol	Original	36n60p	PDF
88N30P Abstract: A220D 88N30 Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFH 88N30P IXFK 88N30P VDSS ID25 RDS on trr = 300 V = 88 A Ω = 40 mΩ ≤ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300	Original	88n30p o-247 a220d 88n30	PDF
30N60P Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS VDSS ID25 = = RDS on ≤ ≤ trr Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	30n60p 30n60ps o-268 plus220	PDF
16N50P Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFA 16N50P IXFP 16N50P IXFH 16N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500	Original	16n50p o-220 o-263 o-247	PDF
TO-3P weight Abstract: ixys ixfh 30n50p QG SMD TRANS PLUS220SMD 123B16 Contextual Info: Advance Technical Information PolarHVTM Power HiPerFET MOSFET VDSS ID25 IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS on trr = 500 V = 30 A Ω = 200 mΩ < 200 ns TO-3P (IXFQ)	Original	30n50p 30n50ps plus220 to-3p weight +4ixys ixfh 30n50p qg smd trans plus220smd 123b16	PDF
42N50 Abstract: 42N50P2 Contextual Info: Advance Technical Information IXFH42N50P2 IXFT42N50P2 PolarP2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 42A Ω ≤ 145mΩ TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings VDSS	Original	ixfh42n50p2 ixft42n50p2 o-247 42n50p2 +27j-n45 42n50	PDF
52N50P2 Abstract: IXFH52N50P2 ixfh52n50 Contextual Info: Advance Technical Information IXFH52N50P2 IXFT52N50P2 PolarP2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 52A Ω ≤ 120mΩ TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	ixfh52n50p2 ixft52n50p2 o-247 52n50p2 +28j-n45 ixfh52n50	PDF
Contextual Info: □ IXYS HiPerFET Power MOSFETs IXFH40N30Q IXFT40N30Q V D S S 300 40 85 < 200 = ^ D 2 5 D Q Class D S o n N-Channel Enhancement Mode Avalanche Rated Highdv/dt, LowQg t r r V A mQ ns Preliminary data Maximum Ratings Symbol Test Conditions V Td = 25°C to 150°C	OCR Scan	ixfh40n30q ixft40n30q o-268	PDF
IXFH21N50 Contextual Info: HiPerFET Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, L o w trr, HDM O S™ Family Maximum Ratings Test Conditions V DSS T d = 25°C to 150°C 500 V v DGR T d = 25°C to 150°C; RGS = 1 M£i 500	OCR Scan	ixfh/ixfm21n50 ixfh/ixfm/ixft24n50 ixfh/ixft26n50 o-247 +5ixft24n50 ixfh26n50 ixfm26n50 ixft26n50 ixfh21n50	PDF
IXFH58N20 Contextual Info: □ IXYS HiPerFET Power MOSFETs V DSS IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 N-Channel Enhancement Mode High dv/dt, L o w trr, HDM O S™ Family D DS on ^D25 42 A 60m Q 50 A 45m Q 58 A 40m Q 200 V 200 V 200 V trr < 200 ns TO-247 AD (IXFH) Maximum Ratings	OCR Scan	ixfh/ixfm42n20 ixfh/ixfm/ixft50n20 ixfh/ixft58n20 o-247 +5ixft58n20 ixfh50n20 ixfm50n20 ixft50n20 ixfh58n20	PDF

IXFH Search Results

IXFH Datasheets (335)

IXFH Price and Stock

IXYS Corporation IXFH18N60P

IXYS Corporation IXFH22N60P

IXYS Corporation IXFH24N90P

IXYS Corporation IXFH34N65X2

IXYS Corporation IXFH30N50P

IXFH Datasheets Context Search

17n80

58N2

ixf26n50q

80N10

IXFH23N80Q

40N30Q

IXFH15N80

28N50F

52N30

22N55

10N100

40N30

IXFH110N10P

88N30P

30N60P

16N50P

TO-3P weight

42N50

52N50P2

IXFH21N50

IXFH58N20