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    IXFH Search Results

    IXFH Datasheets (335)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFH100N25P
    IXYS PolarHT HiPerFET Power MOSFET Original PDF 86.16KB 5
    IXFH100N30X3
    IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 300V/100A ULTRA JUNCTION X3-CLAS Original PDF 259.11KB
    IXFH102N15T
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 102A TO-247 Original PDF 6
    IXFH10N100
    IXYS HiPerFET Power MOSFET Original PDF 579.94KB 4
    IXFH10N100
    IXYS 1000V HiPerFET power MOSFET Original PDF 238.42KB 4
    IXFH10N100
    IXYS HiperFET Power MOSFETS Scan PDF 697.9KB 8
    IXFH10N100
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 76.62KB 1
    IXFH10N100P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1KV 10A TO-247AD Original PDF 4
    IXFH10N100Q
    IXYS HiPerFETTM Power MOSFETs Q Class Original PDF 145.94KB 4
    IXFH10N100Q
    IXYS HiPerFET Power MOSFET Original PDF 145.94KB 4
    IXFH10N60
    IXYS HiperFET Power MOSFETS Scan PDF 697.9KB 8
    IXFH10N65
    IXYS HiperFET Power MOSFETS Scan PDF 697.9KB 8
    IXFH10N80P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 10A TO-247 Original PDF 5
    IXFH10N90
    IXYS 900V HiPerFET power MOSFET Original PDF 86.36KB 4
    IXFH10N90
    IXYS HiperFET Power MOSFETS Scan PDF 697.9KB 8
    IXFH10N90
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 76.62KB 1
    IXFH110N10P
    IXYS PolarHT HiPerFET Power MOSFET Original PDF 162.47KB 5
    IXFH110N15T2
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 110A TO-247 Original PDF 6
    IXFH110N25T
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 110A TO-247 Original PDF 5
    IXFH11N100
    IXYS HiperFET Power MOSFETS Scan PDF 697.9KB 8
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    IXFH Price and Stock

    IXYS Corporation

    IXYS Corporation IXFH34N65X2

    MOSFET N-CH 650V 34A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH34N65X2 Tube 3,889 1
    • 1 $9.40
    • 10 $9.40
    • 100 $5.53
    • 1000 $4.24
    • 10000 $4.24
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    Mouser Electronics IXFH34N65X2 660
    • 1 $9.40
    • 10 $5.53
    • 100 $5.53
    • 1000 $4.24
    • 10000 $4.24
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    Newark IXFH34N65X2 Bulk 252 1
    • 1 $10.68
    • 10 $8.04
    • 100 $7.47
    • 1000 $7.00
    • 10000 $7.00
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    IXYS Corporation IXFH150N30X3

    MOSFET N-CH 300V 150A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH150N30X3 Tube 783 1
    • 1 $21.68
    • 10 $21.68
    • 100 $13.72
    • 1000 $12.53
    • 10000 $12.53
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    TTI IXFH150N30X3 Tube 360 30
    • 1 -
    • 10 -
    • 100 $13.72
    • 1000 $12.53
    • 10000 $12.53
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    IXYS Corporation IXFH50N85X

    MOSFET N-CH 850V 50A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH50N85X Tube 572 1
    • 1 $18.46
    • 10 $18.46
    • 100 $11.52
    • 1000 $10.20
    • 10000 $10.20
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    Newark IXFH50N85X Bulk 160 1
    • 1 $20.85
    • 10 $19.02
    • 100 $17.77
    • 1000 $17.77
    • 10000 $17.77
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    TTI IXFH50N85X Tube 300 30
    • 1 -
    • 10 -
    • 100 $10.31
    • 1000 $10.20
    • 10000 $10.20
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    IXYS Corporation IXFH10N100P

    MOSFET N-CH 1000V 10A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH10N100P Tube 569 1
    • 1 $9.07
    • 10 $9.07
    • 100 $5.32
    • 1000 $4.05
    • 10000 $4.05
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    Newark IXFH10N100P Bulk 213 1
    • 1 $9.34
    • 10 $5.79
    • 100 $5.23
    • 1000 $4.77
    • 10000 $4.77
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    IXYS Corporation IXFH18N100Q3

    MOSFET N-CH 1000V 18A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH18N100Q3 Tube 536 1
    • 1 $21.05
    • 10 $21.05
    • 100 $13.29
    • 1000 $12.06
    • 10000 $12.06
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    IXFH Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    17n80

    Abstract: 17N80Q
    Contextual Info: HiPerFETTM Power MOSFETs IXFH 17N80Q IXFT 17N80Q VDSS ID25 RDS on Q-Class = 800 V = 17 A = 0.60 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    17N80Q O-268 728B1 123B1 728B1 065B1 17n80 17N80Q PDF

    58N2

    Abstract: 58N20
    Contextual Info: HiPerFETTM Power MOSFETs IXFH 58N20Q IXFT 58N20Q VDSS ID25 RDS on Q-Class = 200 V = 58 A = 40 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    58N20Q O-268 O-268 58N2 58N20 PDF

    ixf26n50q

    Abstract: 24N50 26N50Q 125OC ixf26N50
    Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    24N50Q 26N50Q 125OC 728B1 ixf26n50q 24N50 26N50Q 125OC ixf26N50 PDF

    80N10

    Abstract: 80N10Q
    Contextual Info: HiPerFETTM Power MOSFETs IXFH 80N10Q IXFT 80N10Q VDSS ID25 = 100 V = 80 A = 15 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original
    80N10Q 200ns O-247 80N10 80N10Q PDF

    IXFH23N80Q

    Abstract: transistor N 343 AD
    Contextual Info: HiPerFETTM Power MOSFETs IXFH23N80Q IXFT23N80Q VDSS = 800 V = 23 A ID25 RDS on = 0.42 Ω Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    IXFH23N80Q IXFT23N80Q 728B1 123B1 728B1 065B1 IXFH23N80Q transistor N 343 AD PDF

    40N30Q

    Abstract: IXYS 40N30Q
    Contextual Info: HiPerFETTM Power MOSFETs IXFH 40N30Q IXFT 40N30Q Q-Class VDSS ID25 = 300 V = 40 A = 80 mW £ 250 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    40N30Q O-268 40N30Q IXYS 40N30Q PDF

    IXFH15N80

    Abstract: 15n80 14N80 DS965 IXFH14N80 125OC
    Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH14N80 IXFH15N80 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient


    Original
    IXFH14N80 IXFH15N80 14N80 15N80 125OC 728B1 IXFH15N80 15n80 14N80 DS965 IXFH14N80 125OC PDF

    28N50F

    Abstract: 28N50
    Contextual Info: Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFH 28N50F VDSS IXFT 28N50F ID25 RDS on = 500V = 28A Ω = 190mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr


    Original
    28N50F O-247 728B1 28N50 PDF

    52N30

    Abstract: IXFH 52N30q 52N30Q TO264 footprint
    Contextual Info: HiPerFETTM Power MOSFETs IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances VDSS ID25 = 300 V = 52 A = 60 mW £ 250 ns RDS on trr Preliminary data Symbol Test Conditions


    Original
    52N30Q 52N30 IXFH 52N30q 52N30Q TO264 footprint PDF

    Contextual Info: HiPerFETTM Power MOSFETs VDSS ID25 IXFH 80N15Q IXFK 80N15Q IXFT 80N15Q Q-Class = 150 V = 80 A = 22.5 mW £ 200 ns RDS on t rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS


    Original
    80N15Q PDF

    22N55

    Contextual Info: HiPerFETTM Power MOSFET IXFH 22 N55 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr = 550 V = 22 A = 0.27 W £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 550 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original
    PDF

    10N100

    Abstract: 12n100 N100
    Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 1000 V 1000 V Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C


    Original
    10N100 12N100 10N100 12n100 N100 PDF

    40N30

    Abstract: 35n30 FM40N30 IXFH40N30
    Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 300 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous


    Original
    35N30 40N30 40N30 35n30 FM40N30 IXFH40N30 PDF

    IXFH110N10P

    Abstract: 110N10P
    Contextual Info: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 110N10P IXFV 110N10P IXFV 110N10PS VDSS ID25 RDS on Preliminary Data Sheet TO-247 (IXFH) Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original
    110N10P 110N10PS O-247 10oulombs IXFH110N10P IXFH110N10P 110N10P PDF

    Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N60P IXFT 36N60P IXFK 36N60P VDSS ID25 RDS on t rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 600 V = 36 A ≤ 190 mΩ Ω ≤ 250 ns Preliminary Data Sheet Symbol


    Original
    36N60P PDF

    88N30P

    Abstract: A220D 88N30
    Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFH 88N30P IXFK 88N30P VDSS ID25 RDS on trr = 300 V = 88 A Ω = 40 mΩ ≤ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300


    Original
    88N30P O-247 88N30P A220D 88N30 PDF

    30N60P

    Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS VDSS ID25 = = RDS on ≤ ≤ trr Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original
    30N60P 30N60PS O-268 PLUS220 30N60P PDF

    16N50P

    Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFA 16N50P IXFP 16N50P IXFH 16N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500


    Original
    16N50P O-220 O-263 O-247 16N50P PDF

    TO-3P weight

    Abstract: ixys ixfh 30n50p QG SMD TRANS PLUS220SMD 123B16
    Contextual Info: Advance Technical Information PolarHVTM Power HiPerFET MOSFET VDSS ID25 IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS on trr = 500 V = 30 A Ω = 200 mΩ < 200 ns TO-3P (IXFQ)


    Original
    30N50P 30N50PS PLUS220 TO-3P weight ixys ixfh 30n50p QG SMD TRANS PLUS220SMD 123B16 PDF

    42N50

    Abstract: 42N50P2
    Contextual Info: Advance Technical Information IXFH42N50P2 IXFT42N50P2 PolarP2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 42A Ω ≤ 145mΩ TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings VDSS


    Original
    IXFH42N50P2 IXFT42N50P2 O-247 42N50P2 7J-N45 42N50 PDF

    52N50P2

    Abstract: IXFH52N50P2 ixfh52n50
    Contextual Info: Advance Technical Information IXFH52N50P2 IXFT52N50P2 PolarP2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 52A Ω ≤ 120mΩ TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original
    IXFH52N50P2 IXFT52N50P2 O-247 52N50P2 8J-N45 IXFH52N50P2 ixfh52n50 PDF

    Contextual Info: □ IXYS HiPerFET Power MOSFETs IXFH40N30Q IXFT40N30Q V D S S 300 40 85 < 200 = ^ D 2 5 D Q Class D S o n N-Channel Enhancement Mode Avalanche Rated Highdv/dt, LowQg t r r V A mQ ns Preliminary data Maximum Ratings Symbol Test Conditions V Td = 25°C to 150°C


    OCR Scan
    IXFH40N30Q IXFT40N30Q O-268 PDF

    IXFH21N50

    Contextual Info: HiPerFET Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, L o w trr, HDM O S™ Family Maximum Ratings Test Conditions V DSS T d = 25°C to 150°C 500 V v DGR T d = 25°C to 150°C; RGS = 1 M£i 500


    OCR Scan
    IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 O-247 IXFT24N50 IXFH26N50 IXFM26N50 IXFT26N50 IXFH21N50 PDF

    IXFH58N20

    Contextual Info: □ IXYS HiPerFET Power MOSFETs V DSS IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 N-Channel Enhancement Mode High dv/dt, L o w trr, HDM O S™ Family D DS on ^D25 42 A 60m Q 50 A 45m Q 58 A 40m Q 200 V 200 V 200 V trr < 200 ns TO-247 AD (IXFH) Maximum Ratings


    OCR Scan
    IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 O-247 IXFT58N20 IXFH50N20 IXFM50N20 IXFT50N20 IXFH58N20 PDF