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    88N30 Search Results

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    88N30 Price and Stock

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    Dialight 598-8N30-107F

    Led, Orange, 610Nm, 350Mcd, 0603; |Dialight 598-8N30-107F
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    Newark () 598-8N30-107F Cut Tape 7,660 5
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    598-8N30-107F Tape & Reel 7,660 100
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    TME 598-8N30-107F 8,000 4,000
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    Master Electronics 598-8N30-107F
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    Littelfuse Inc IXTT88N30P

    Mosfet, N-Ch, 300V, 88A, 150Deg C, 600W; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:88A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes
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    Newark () IXTT88N30P Bulk 182 1
    • 1 $20.76
    • 10 $18.11
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    • 1000 $10.87
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    IXTT88N30P Bulk 1
    • 1 $18.37
    • 10 $16.03
    • 100 $10.51
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    RS IXTT88N30P Bulk 8 Weeks 30
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    Master Electronics IXTT88N30P 300
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    • 1000 $9.14
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    Littelfuse Inc IXFH88N30P

    Discmosfetn-Ch Hiperfet-Polar To-247Ad/; |Littelfuse IXFH88N30P
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    Newark IXFH88N30P Bulk 300
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    RS IXFH88N30P Bulk 8 Weeks 30
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    IXYS Corporation IXFK88N30P

    Mosfet, N, To-264; |Ixys Semiconductor IXFK88N30P
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    Newark IXFK88N30P Bulk 1
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    TTI IXFK88N30P Tube 300
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    TME IXFK88N30P 1 1
    • 1 $18.49
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    IXYS Corporation IXTQ88N30P

    Mosfet, N, To-3P; |Ixys Semiconductor IXTQ88N30P
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    Newark IXTQ88N30P Bulk 1
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    TTI IXTQ88N30P Tube 300
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    TME IXTQ88N30P 264 1
    • 1 $14.65
    • 10 $10.39
    • 100 $8.54
    • 1000 $7.76
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    88N30 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    88N30P

    Abstract: A220D 88N30
    Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFH 88N30P IXFK 88N30P VDSS ID25 RDS on trr = 300 V = 88 A Ω = 40 mΩ ≤ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300


    Original     		88n30po-247a220d88n30 PDF

    88N30

    Contextual Info: PolarHTTM Power MOSFET IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P = 300 V = 88 A ≤ 40 mΩ Ω VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		88n30po-24788n30 PDF

    88N30

    Abstract: IXTH88N30P DSA003702
    Contextual Info: IXTH 88N30P IXTK 88N30P IXTQ 88N30P PolarHTTM Power MOSFET VDSS ID25 RDS on = 300 V = 88 A Ω = 40 mΩ N-Channel Enhancement Mode For Plasma Display Applications TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		88n30po-247o-264ixth88n30p+288n30dsa003702 PDF

    88n30p

    Abstract: 88N30 IXTQ88N30P
    Contextual Info: PolarHTTM Power MOSFET IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P VDSS ID25 = 300 V = 88 A Ω = 40 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) D (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR


    Original     		88n30po-247o-26488n30+1ixtq88n30p PDF

    88N30

    Abstract: 88N30P
    Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFH 88N30P IXFK 88N30P VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		88n30po-24788n30 PDF

    88N30

    Contextual Info: PolarHTTM Power MOSFET IXTH 88N30P IXTK 88N30P VDSS ID25 RDS on = 300 V = 88 A Ω = 40 mΩ N-Channel Enhancement Mode For Plasma Display Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		88n30po-247o-26488n30 PDF

    88N30

    Abstract: 88N30P
    Contextual Info: IXTH 88N30P IXTT 88N30P PolarHTTM Power MOSFET RDS on VDSS = 300 ID25 = 88 Ω = 40 mΩ V A N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM 300


    Original     		88n30po-24788n30 PDF

    88N30P

    Abstract: 88N30 IXTQ88N30P ixth IXTH88N30P
    Contextual Info: PolarHTTM Power MOSFET IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 300 V Maximum Ratings VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		88n30po-24788n30ixtq88n30p+2ixthixth88n30p PDF

    88N30P

    Abstract: IXTQ88N30P 88N30
    Contextual Info: Advanced Technical Information IXTK 88N30P IXTQ 88N30P PolarHTTM Power MOSFET VDSS ID25 RDS on = 300 V = 88 A Ω = 40 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		88n30po-264ixtq88n30p88n30 PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		ixtd08n100p-1aixtq22n60pixfh20n80pdws20-200a+6ixfh24n80pixfk180n15pixtq22n50pdwhp16-12ixgh64n60a3ixfb50n80q2 PDF

    88N30W

    Contextual Info: Advanced Power Electronics Corp. 88N30W-HF-3 N-channel Enhancement-mode Power MOSFET Low On-Resistance D Simple Drive Requirement Fast Switching Characteristics G BV DSS 300V R DS ON 48mΩ ID 48A S Description Advanced Power MOSFETs from APEC provide the designer with the best


    Original     		ap88n30w-hf-3ap88n3088n30w PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		o-220isoplus220tmo-247isoplus247tm+15o-264isoplus264tmplus220plus220smdo-252stw20n602n60pixfb100n50ixfb100n50pstw20n60fdixfb100n50p to-264ixys ixfn100n50pixfn48n60pixfh30n60pixfn100n50p PDF

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		110n055p-5s75n10p-5s110n10p-6s140n10p-7s+15170n10p-8s200n10p-8862n15p-5s96n15p-6s120n15p-7s150n15p-8sdiode 13341334 diode96n2036n30p equivalent88n30100n25p36n30ixtp75n10pixtp ixtp ixtp ixtp PDF