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Omega Engineering SCE-36N3006LP NEMA TYPE 1 SINGLE-DOOR ELECTRICAL ENCLOSURES. SIZES FROM 6X6 TO 36X30. - Bulk (Alt: SCE-36N3006LP)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SCE-36N3006LP	Bulk		3 Weeks	1	1 $704.82 10 $704.82 100 $704.82 1000 $704.82 10000 $704.82	Buy Now
Newark	SCE-36N3006LP	Bulk			1	1 $704.82 10 $704.82 100 $704.82 1000 $704.82 10000 $704.82	Buy Now
Torex Semiconductor LTD XC6136N30DNR-G Voltage Supervisor, 3V, 1.1 V to 6 V, Open-Drain, SSOT-24, 4 Pins, Surface Mount, -40 ?C - Tape and Reel (Alt: XC6136N30DNR-G)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	XC6136N30DNR-G	Tape & Reel		16 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.22	Buy Now
Mouser Electronics	XC6136N30DNR-G					1 $0.57 10 $0.39 100 $0.31 1000 $0.29 10000 $0.24	Get Quote
Torex Semiconductor LTD XC6136N30C9R-G Voltage Supervisor, 3V, 1.1 V to 6 V, Open-Drain, USPQ-4B05, 4 Pins, Surface Mount, -40 ?C - Tape and Reel (Alt: XC6136N30C9R-G)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	XC6136N30C9R-G	Tape & Reel		16 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.22	Buy Now
Avnet Silica	XC6136N30C9R-G			9 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Torex Semiconductor LTD XC6136N30AMR-G Voltage Supervisor, 3V, 1.1 V to 6 V, Open-Drain, SOT-25, 5 Pins, Surface Mount, -40 ?C - Tape and Reel (Alt: XC6136N30AMR-G)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	XC6136N30AMR-G	Tape & Reel		16 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.19	Buy Now
Mouser Electronics	XC6136N30AMR-G					1 $0.51 10 $0.35 100 $0.27 1000 $0.23 10000 $0.21	Get Quote
Torex Semiconductor LTD XC6136N30D9R-G Voltage Supervisor, 3V, 1.1 V to 6 V, Open-Drain, USPQ-4B05, 4 Pins, Surface Mount, -40 ?C - Tape and Reel (Alt: XC6136N30D9R-G)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	XC6136N30D9R-G	Tape & Reel		16 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.22	Buy Now

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36N30 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
36N30P Abstract: 36N30 Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTQ 36N30P IXTA 36N30P IXTP 36N30P VDSS ID25 RDS on = = = 300 V 36 A Ω 110 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	36n30p o-220 065b1 728b1 +2123b1 36n30	PDF
36N30 Abstract: IXTQ36N30P 36N30P Contextual Info: PolarHTTM Power MOSFET IXTQ 36N30P IXTA 36N30P IXTP 36N30P VDSS ID25 RDS on = = = 300 V 36 A Ω 110 mΩ N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	36n30p o-263 o-220 36n30 +1ixtq36n30p	PDF
Contextual Info: PolarHTTM Power MOSFET IXTA 36N30P IXTP 36N30P IXTQ 36N30P VDSS ID25 = = ≤ RDS on 300 V 36 A Ω 110 mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	36n30p o-263	PDF
36N30P Abstract: 36N30 IXTA36N30P 36N30P equivalent IXTQ36N30P Contextual Info: PolarHTTM Power MOSFET IXTA 36N30P IXTP 36N30P IXTQ 36N30P VDSS ID25 = = ≤ RDS on 300 V 36 A Ω 110 mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	36n30p o-263 36n30 ixta36n30p +236n30p equivalent ixtq36n30p	PDF
RAS 0510 SUN HOLD Abstract: relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03 Contextual Info: Compiled by Herman Boel & James Niven EMWG homepage: www.emwg.info 1998-2005 Preface & Copyright Welcome to the Euro-African Medium Wave Guide What lies in front of you or what you see on your computer screen is the result of a lot of hard work and love.	Original	mid-1990s ras 0510 sun hold relay ras 1210 sun hold ras 0510 +7relay ras 0510 ras 0510 sun hold ras 0910 sun hold ras 0610 erf 2030 ras 0610 relay 45n03	PDF
Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFETTM IXTJ 36N20 VDSS = 200 ID25 = RDS on = N-Channel Enhancement Mode V 36 A Ω 70 mΩ trr < 200 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V	Original	36n20	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	ixtd08n100p-1a ixtq22n60p ixfh20n80p dws20-200a +6ixfh24n80p ixfk180n15p ixtq22n50p dwhp16-12 ixgh64n60a3 ixfb50n80q2	PDF
36N30 Abstract: SPF530 Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFETTM IXTJ 36N20 VDSS = 200 ID25 = RDS on = N-Channel Enhancement Mode V 36 A Ω 70 mΩ trr < 200 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V	Original	36n20 36n30 spf530	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	o-220 isoplus220tm o-247 isoplus247tm +15o-264 isoplus264tm plus220 plus220smd o-252 stw20n60 2n60p ixfb100n50 ixfb100n50p stw20n60fd ixfb100n50p to-264 ixys ixfn100n50p ixfn48n60p ixfh30n60p ixfn100n50p	PDF
DIODE 1334 Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88 Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205	Original	110n055p-5s 75n10p-5s 110n10p-6s 140n10p-7s +15170n10p-8s 200n10p-88 62n15p-5s 96n15p-6s 120n15p-7s 150n15p-8s diode 1334 1334 diode 96n20 36n30p equivalent 88n30 100n25p 36n30 ixtp75n10p ixtp ixtp ixtp ixtp	PDF