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    36N30P Search Results

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    36N30P Price and Stock

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    Littelfuse Inc IXTP36N30P

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics IXTP36N30P 300
    • 1 -
    • 10 $4.28
    • 100 $3.42
    • 1000 $3.00
    • 10000 $3.00
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    Newark IXTP36N30P Bulk 95 1
    • 1 $6.75
    • 10 $4.54
    • 100 $3.28
    • 1000 $2.70
    • 10000 $2.64
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    RS IXTP36N30P Bulk 8 Weeks 50
    • 1 -
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    • 100 $4.26
    • 1000 $4.26
    • 10000 $4.26
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    IXYS Corporation IXTP36N30P

    MOSFETs 36 Amps 300V 0.11 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTP36N30P 3,546
    • 1 $6.73
    • 10 $3.67
    • 100 $3.28
    • 1000 $2.94
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    Newark IXTP36N30P Bulk 245 1
    • 1 $6.37
    • 10 $5.50
    • 100 $3.93
    • 1000 $3.18
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    TTI IXTP36N30P Tube 300
    • 1 -
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    • 1000 $2.79
    • 10000 $2.79
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    TME IXTP36N30P 194 1
    • 1 $5.90
    • 10 $3.47
    • 100 $3.28
    • 1000 $3.28
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    IXYS Corporation IXTA36N30P

    MOSFETs MOSFET N-CH 300V 36A
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    Mouser Electronics IXTA36N30P 991
    • 1 $7.06
    • 10 $3.77
    • 100 $3.44
    • 1000 $3.08
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    TTI IXTA36N30P Tube 300
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    • 1000 $2.65
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    TME IXTA36N30P 46 1
    • 1 $5.29
    • 10 $3.20
    • 100 $3.16
    • 1000 $3.16
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    IXYS Corporation IXFA36N30P3

    MOSFETs DiscMSFT NChHiPerFET-Polar3 TO-263D2
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    Mouser Electronics IXFA36N30P3 361
    • 1 $7.86
    • 10 $4.24
    • 100 $3.88
    • 1000 $3.51
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    TME IXFA36N30P3 1
    • 1 $7.18
    • 10 $7.18
    • 100 $3.65
    • 1000 $3.08
    • 10000 $3.08
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    IXYS Corporation IXTQ36N30P

    MOSFETs 36 Amps 300V 0.11 Rds
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    Mouser Electronics IXTQ36N30P 230
    • 1 $7.48
    • 10 $3.92
    • 100 $3.92
    • 1000 $3.29
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    TTI IXTQ36N30P Tube 300
    • 1 -
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    • 100 -
    • 1000 $3.24
    • 10000 $3.24
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    TME IXTQ36N30P 1
    • 1 $5.12
    • 10 $5.12
    • 100 $2.99
    • 1000 $2.89
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    Find more 36N30P price and stock on Findchips.com

    36N30P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    36N30P

    Abstract: 36N30
    Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTQ 36N30P IXTA 36N30P IXTP 36N30P VDSS ID25 RDS on = = = 300 V 36 A Ω 110 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		36n30po-220065b1728b1+2123b136n30 PDF

    36N30

    Abstract: IXTQ36N30P 36N30P
    Contextual Info: PolarHTTM Power MOSFET IXTQ 36N30P IXTA 36N30P IXTP 36N30P VDSS ID25 RDS on = = = 300 V 36 A Ω 110 mΩ N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		36n30po-263o-22036n30+1ixtq36n30p PDF

    Contextual Info: PolarHTTM Power MOSFET IXTA 36N30P IXTP 36N30P IXTQ 36N30P VDSS ID25 = = ≤ RDS on 300 V 36 A Ω 110 mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		36n30po-263 PDF

    36N30P

    Abstract: 36N30 IXTA36N30P 36N30P equivalent IXTQ36N30P
    Contextual Info: PolarHTTM Power MOSFET IXTA 36N30P IXTP 36N30P IXTQ 36N30P VDSS ID25 = = ≤ RDS on 300 V 36 A Ω 110 mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		36n30po-26336n30ixta36n30p+236n30p equivalentixtq36n30p PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		ixtd08n100p-1aixtq22n60pixfh20n80pdws20-200a+6ixfh24n80pixfk180n15pixtq22n50pdwhp16-12ixgh64n60a3ixfb50n80q2 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		o-220isoplus220tmo-247isoplus247tm+15o-264isoplus264tmplus220plus220smdo-252stw20n602n60pixfb100n50ixfb100n50pstw20n60fdixfb100n50p to-264ixys ixfn100n50pixfn48n60pixfh30n60pixfn100n50p PDF

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		110n055p-5s75n10p-5s110n10p-6s140n10p-7s+15170n10p-8s200n10p-8862n15p-5s96n15p-6s120n15p-7s150n15p-8sdiode 13341334 diode96n2036n30p equivalent88n30100n25p36n30ixtp75n10pixtp ixtp ixtp ixtp PDF