2N60P Search Results

2n60p

Abstract: DS99422E
Contextual Info: PolarHVTM Power MOSFET IXTP 2N60P IXTY 2N60P VDSS ID25 RDS on = 500 = 2 ≤ 5.1 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ VGSS VGSM Continuous Transient

2N60P

Abstract: IXTP2N60P
Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTP 2N60P IXTY 2N60P VDSS ID25 = 500 = 2 = 4.7 RDS on V A Ω N-Channel Enhancement Mode Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 600 V 600

IXTP2N60P

Abstract: 2n60p IXTY2N60P IXTP IXTP IXTP IXTP 237 521 02
Contextual Info: 2N60P 2N60P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 600V = 2A ≤ 5.1Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ

2n60p

Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
Contextual Info: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond

Contextual Info: PolarTM Power MOSFET VDSS ID25 2N60P 2N60P RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 600V = 2A ≤ 5.1Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

STW20N60

Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal

2N60F

Contextual Info: 2N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 2 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE Description: This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the