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STMicroelectronics


STMicroelectronics STW48N60DM2 - Rail/Tube (Alt: STW48N60DM2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	STW48N60DM2	Tube		26 Weeks	600	1 - 10 - 100 - 1000 $2.48 10000 $2.33	Buy Now
Mouser Electronics	STW48N60DM2		5			1 $7.16 10 $4.02 100 $3.20 1000 $2.85 10000 $2.85	Buy Now
Ameya Holding Limited	STW48N60DM2		159			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	STW48N60DM2		1,170	27 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STW48N60DM2			27 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics STW48N60M2 - Rail/Tube (Alt: STW48N60M2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	STW48N60M2	Tube		26 Weeks	600	1 - 10 - 100 - 1000 $2.20 10000 $2.07	Buy Now
Mouser Electronics	STW48N60M2		200			1 $6.07 10 $3.12 100 $2.85 1000 $2.51 10000 $2.51	Buy Now
Newark	STW48N60M2	Bulk	198		1	1 $6.94 10 $6.06 100 $3.98 1000 $3.65 10000 $3.65	Buy Now
Ameya Holding Limited	STW48N60M2		723			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	STW48N60M2		1,110	27 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	STW48N60M2			27 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	STW48N60M2		5,871			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	STW48N60M2		30,000			1 - 10 - 100 $1.73 1000 $1.49 10000 $1.49	Buy Now
STMicroelectronics STW48N60M6-4 N-Channel Power MOSFET 600V 39A 4-Pin TO-247 Tube - Rail/Tube (Alt: STW48N60M6-4)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	STW48N60M6-4	Tube		26 Weeks	600	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Ameya Holding Limited	STW48N60M6-4		2,332			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	STW48N60M6-4			27 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	STW48N60M6-4			27 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	STW48N60M6-4		7,044			1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics STWA48N60M6 PTD HIGH VOLTAGE - Rail/Tube (Alt: STWA48N60M6)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	STWA48N60M6	Tube			600	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	STWA48N60M6		16			1 $10.86 10 $7.68 100 $6.40 1000 $5.70 10000 $5.32	Buy Now
Avnet Silica	STWA48N60M6			53 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	STWA48N60M6			53 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	STWA48N60M6		2,993			1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics STW48N60M2-4 - Rail/Tube (Alt: STW48N60M2-4)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	STW48N60M2-4	Tube		26 Weeks	600	1 - 10 - 100 - 1000 $4.10 10000 $3.87	Buy Now
Avnet Silica	STW48N60M2-4		1,740	27 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STW48N60M2-4			27 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	STW48N60M2-4		6,074			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	STW48N60M2-4		93,480			1 - 10 - 100 $2.36 1000 $2.03 10000 $2.03	Buy Now

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48N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
48N60 Abstract: sot 227b FS 8860 48N60P Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 48N60P VDSS = 600 V ID25 = 40 A Ω RDS on ≤ 140 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	48n60p 48n60 sot 227b fs 8860	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID2 IXFK 48N60P IXFX 48N60P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	48n60p o-264	PDF
48N60 Abstract: ISOPLUS247 IXFR48N60P A160M Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 48N60P VDSS ID25 RDS on trr ISOPLUS247TM N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode = 600 V = 32 A ≤ 160 mΩ Ω ≤ 250 ns (Electrically Isolated Back Surface) Symbol	Original	48n60p isoplus247tm 48n60 isoplus247 +2ixfr48n60p a160m	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 48N60P VDSS = 600 V ID25 = 40 A Ω RDS on ≤ 140 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	48n60p	PDF
48N60 Abstract: IXFK 48n60p 48N60P PLUS247 Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 48N60P IXFX 48N60P VDSS ID2 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous	Original	48n60p o-264 48n60 ixfk 48n60p +1plus247	PDF
48N60 Abstract: 48N60P PLUS247 Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 48N60P IXFX 48N60P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	48n60p o-264 48n60 plus247	PDF
48N60 Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 48N60P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 600 V = 48 A ≤ 135 mΩ Ω ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	48n60p ot-227 e153432 48n60	PDF
IXFR48N60P Abstract: FS 8860 48n60 ISOPLUS247 Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFR 48N60P VDSS ID25 RDS on trr ISOPLUS247TM (Electrically Isolated Back Surface) = 600 V = 32 A ≤ 150 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	48n60p isoplus247tm ixfr48n60p fs 8860 +248n60 isoplus247	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFR 48N60P VDSS ID25 RDS on trr ISOPLUS247TM (Electrically Isolated Back Surface) = 600 V = 32 A Ω ≤ 150 mΩ ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	48n60p isoplus247tm	PDF
EATON CM20A Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main	OCR Scan	eaton cm20a a5 gne mosfet hall sensor 44e 402 2n8491 +6ftg 1087 s triac bcr 10km feb3t smd transistor marking 352a sharp eia 577 sharp color tv schematic diagram mp-130 m mh-ce 10268	PDF
Contextual Info: Preliminary Technical Information 48N60B3 48N60B3D1 GenX3TM 600V IGBTs Electrically Isolated Back Surface VCES = IC25 = VCE(sat) ≤ tfi(typ) = 600V 60A 2.1V 116ns Medium-Speed Low-Vsat PT IGBTs 5-40 kHz Switching IXGR_B3 Symbol Test Conditions IXGR_B3D1	Original	ixgr48n60b3 ixgr48n60b3d1 116ns isoplus247tm +5e153432 ic110 if110 48n60b3d1 338b2	PDF
2n60p Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P Contextual Info: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond	Original	ixfr48n60p 18n60p 30n60p 22n60p +1536n60p 26n60p 48n60p plus220 ixtv22n50ps 2n60p gsm based speed control of single phase induction motor thyristor family 48n60 600v 20 amp mosfet 14n60 300v hiperfet power mosfet single die mosfet wireless a.c motor speed controlling system ixys scr module gate drive 15n60p	PDF
IXGR48N60B3 Abstract: 48N60B3D1 ixgr48n60 48N60B3 Contextual Info: Preliminary Technical Information 48N60B3 48N60B3D1 GenX3TM 600V IGBTs Electrically Isolated Back Surface VCES = IC25 = VCE(sat) ≤ tfi(typ) = 600V 60A 2.1V 116ns Medium-Speed Low-Vsat PT IGBTs 5-40 kHz Switching IXGR_B3 IXGR_B3D1 Symbol Test Conditions	Original	ixgr48n60b3 ixgr48n60b3d1 116ns isoplus247tm +7e153432 ic110 if110 48n60b3d1 338b2 ixgr48n60 48n60b3	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF

ixgr48n60 Abstract: IXGR48N60B3D1 48N60 48N60B3D1 IXGR48N60B3 smd c7f IF110 Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT 48N60B3 48N60B3D1 VCES = IC25 = VCE sat ≤ tfi(typ) = (Electrically isolatred Back Surface) Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGR_B3 IXGR_B3D1 Maximum Ratings ISOPLUS247TM (IXGR)	Original	ixgr48n60b3 ixgr48n60b3d1 116ns ic110 +7if110 48n60b3d1 isoplus247tm e153432 ixgr48n60 48n60 smd c7f	PDF

48N60 Search Results

48N60 Price and Stock

STMicroelectronics STW48N60DM2

STMicroelectronics STW48N60M2

STMicroelectronics STW48N60M6-4

STMicroelectronics STWA48N60M6

STMicroelectronics STW48N60M2-4

48N60 Datasheets Context Search

48N60

48N60

48N60

48N60

48N60

IXFR48N60P

EATON CM20A

2n60p

IXGR48N60B3

7N60B equivalent

ixgr48n60