48N60 Search Results

48N60

Abstract: sot 227b FS 8860 48N60P
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 48N60P VDSS = 600 V ID25 = 40 A Ω RDS on ≤ 140 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID2 IXFK 48N60P IXFX 48N60P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ

48N60

Abstract: ISOPLUS247 IXFR48N60P A160M
Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 48N60P VDSS ID25 RDS on trr ISOPLUS247TM N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode = 600 V = 32 A ≤ 160 mΩ Ω ≤ 250 ns (Electrically Isolated Back Surface) Symbol

Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 48N60P VDSS = 600 V ID25 = 40 A Ω RDS on ≤ 140 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

48N60

Abstract: IXFK 48n60p 48N60P PLUS247
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 48N60P IXFX 48N60P VDSS ID2 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous

48N60

Abstract: 48N60P PLUS247
Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 48N60P IXFX 48N60P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

48N60

Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 48N60P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 600 V = 48 A ≤ 135 mΩ Ω ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C

IXFR48N60P

Abstract: FS 8860 48n60 ISOPLUS247
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFR 48N60P VDSS ID25 RDS on trr ISOPLUS247TM (Electrically Isolated Back Surface) = 600 V = 32 A ≤ 150 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings

Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFR 48N60P VDSS ID25 RDS on trr ISOPLUS247TM (Electrically Isolated Back Surface) = 600 V = 32 A Ω ≤ 150 mΩ ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: Preliminary Technical Information 48N60B3 48N60B3D1 GenX3TM 600V IGBTs Electrically Isolated Back Surface VCES = IC25 = VCE(sat) ≤ tfi(typ) = 600V 60A 2.1V 116ns Medium-Speed Low-Vsat PT IGBTs 5-40 kHz Switching IXGR_B3 Symbol Test Conditions IXGR_B3D1

2n60p

Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
Contextual Info: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond

IXGR48N60B3

Abstract: 48N60B3D1 ixgr48n60 48N60B3
Contextual Info: Preliminary Technical Information 48N60B3 48N60B3D1 GenX3TM 600V IGBTs Electrically Isolated Back Surface VCES = IC25 = VCE(sat) ≤ tfi(typ) = 600V 60A 2.1V 116ns Medium-Speed Low-Vsat PT IGBTs 5-40 kHz Switching IXGR_B3 IXGR_B3D1 Symbol Test Conditions

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

ixgr48n60

Abstract: IXGR48N60B3D1 48N60 48N60B3D1 IXGR48N60B3 smd c7f IF110
Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT 48N60B3 48N60B3D1 VCES = IC25 = VCE sat ≤ tfi(typ) = (Electrically isolatred Back Surface) Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGR_B3 IXGR_B3D1 Maximum Ratings ISOPLUS247TM (IXGR)