IF110 Search Results

SAW Filter

Abstract: IF SAW Filter
Contextual Info: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 821-IF110.0M-29A 110.0 MHz IF SAW Filter 29.66 MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit

SAW Filter

Abstract: IF SAW Filter
Contextual Info: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 813-IF110.8M-07A 110.8MHz IF SAW Filter 7.70MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit

SAW Filter

Abstract: IF SAW Filter
Contextual Info: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 813-IF110.0M-02A 110MHz IF SAW Filter 2.18MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit

SAW Filter

Abstract: IF SAW Filter
Contextual Info: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 813-IF110.0M-20C 110.1 MHz IF SAW Filter 20.35 MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit

SAW Filter

Abstract: IF SAW Filter
Contextual Info: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 821-IF110.0M-20B 110.0 MHz IF SAW Filter 20.27 MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit

SAW Filter

Abstract: IF SAW Filter
Contextual Info: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 813-IF110.0M-04A 110MHz IF SAW Filter 4.82MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit

SAW Filter

Abstract: IF SAW Filter
Contextual Info: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 821-IF110.43M-03A 110.43 MHz IF SAW Filter 3.90MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit

Diode smd s6 68

Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

SMD MARKING code L1

Abstract: smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ
Contextual Info: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

50904

Contextual Info: GMM 3x180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Symbol

IXGJ50N60C4D1

Abstract: G50N60
Contextual Info: Preliminary Technical Information High-Gain IGBT w/ Diode IXGJ50N60C4D1 VCES = 600V IC110 = 21A VCE sat ≤ 2.50V (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

QR30

Contextual Info: Advance Technical Information IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

IXGK50N60A2D1

Contextual Info: Advance Technical Data IGBT with Diode IXGK50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous

30N60B3D

Contextual Info: IXXH30N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M

IXXH50N60B3D1

Contextual Info: IXXH50N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 5-30kHz Switching 600V 50A 1.80V 135ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M

Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT IXGN120N60A3 IXGN120N60A3D1 VCES = 600V IC110 = 120A VCE sat ≤ 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching D1 E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

Contextual Info: XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 650V 110A 2.1V 85ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

Contextual Info: Preliminary Technical Information IXXH80N65B4H1 XPTTM 650V IGBT GenX4TM w/ Sonic Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 650V 80A 2.0V 63ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR

Contextual Info: Advance Technical Information IXYT30N65C3H1HV IXYH30N65C3H1 XPTTM 650V IGBT GenX3TM w/ Sonic Diode Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 650V 30A 2.7V 24ns TO-268HV Symbol Test Conditions Maximum Ratings

IXGP30N60B4D1

Contextual Info: Preliminary Technical Information High-Gain IGBT w/ Diode IXGP30N60B4D1 VCES = IC110 = VCE sat  tfi(typ) = High-Speed PT Trench IGBT 600V 30A 1.7V 88ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M

Contextual Info: Advance Technical Information IXYH24N90C3D1 900V XPTTM IGBT GenX3TM w/Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 900 900 V V VGES

100n60

Contextual Info: Advance Technical Information IXXK100N60C3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600

IXXN100N60B3H1

Contextual Info: Advance Technical Information IXXN100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C

IXGR50N60B2D1

Abstract: 50N60B2
Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM IXGR 50N60B2 IXGR 50N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 68 A = 2.2 V = 65 ns Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings