G50N60HS
Abstract: G50N60 G50N60*HS SGW50N60HS SGW50N60HS equivalent 207E-04 g50n SGW50N60 200nC IDP45E60
Contextual Info: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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sgw50n60hspg-to-247-3-21eoff25g50n60hs+8g50n60g50n60*hssgw50n60hs equivalent207e-04g50nsgw50n60200ncidp45e60
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G50N60
Abstract: g50n60hs G50N60*HS SGW50N60HS g50n60h IDP45E60 PG-TO-247-3 SGW50N60HS equivalent SGW50N60
Contextual Info: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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sgw50n60hspg-to-247-3eoff25g50n60hs+6g50n60g50n60*hsg50n60hidp45e60sgw50n60hs equivalentsgw50n60
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G50N60*HS
Abstract: g50n60hs 200nC Eoff25 G50N60 SGW50N60HS
Contextual Info: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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sgw50n60hseoff25pg-to-247-3-21100stances+4g50n60*hsg50n60hs200ncg50n60
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G50N60
Abstract: G50N60F NGTG50N60FWG g50n NGTB50N60FWG
Contextual Info: G50N60FWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
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ngtg50n60fwgngtg50n60fwdg50n60g50n60f+2g50nngtb50n60fwg
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G50N60
Abstract: 50n60 50N6 IXGH50N60A IXGH50N60AS g50n 50N60A g50n60 application DSA002033
Contextual Info: HiPerFASTTM IGBT IXGH50N60A VCES IXGH50N60AS IC25 VCE sat tfi Surface Mountable Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 75 A I C90 TC = 90°C
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ixgh50n60aixgh50n60aso-24750n60as+7g50n6050n6050n6g50n50n60ag50n60 applicationdsa002033
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G50N60HS
Abstract: G50N60 G50N60*HS SGW50N60HS IDP45E60 PG-TO-247-3 207E-04 SGW50N60HS equivalent
Contextual Info: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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sgw50n60hspg-to-247-3eoff25g50n60hs+5g50n60g50n60*hsidp45e60207e-04sgw50n60hs equivalent
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g50n60hs
Abstract: G50N60 G50N60*HS SGW50N60HS g50n60h SGW50N60HS equivalent G50N60hs IGBT 207E-04 SGW50N60 PG-TO247-3
Contextual Info: o SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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sgw50n60hseoff25pg-to-247-3-1100substances+9g50n60hsg50n60g50n60*hsg50n60hsgw50n60hs equivalentg50n60hs igbt207e-04sgw50n60pg-to247-3
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G50N60FL
Abstract: G50N60F G50N60 NGTB50N60FLWG NGTG50N60FLWG solar inverters circuit diagram
Contextual Info: G50N60FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
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ngtg50n60flwg100blengtg50n60flw/dg50n60fl+4g50n60fg50n60ngtb50n60flwgsolar inverters circuit diagram
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