50N6 Search Results
50N6 Price and Stock
onsemi FCMT250N65S3MOSFET N-CH 650V 12A POWER88 | 
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
 | 
FCMT250N65S3 | Cut Tape | 5,960 | 1 | 
  | 
Buy Now | |||||
 
 | 
FCMT250N65S3 | Reel | 16 Weeks | 3,000 | 
  | 
Buy Now | |||||
 
 | 
FCMT250N65S3 | 26,152 | 1 | 
  | 
Buy Now | ||||||
 
 | 
FCMT250N65S3 | 3,000 | 
  | 
Buy Now | |||||||
 
 | 
FCMT250N65S3 | 3,042 | 
  | 
Get Quote | |||||||
 
 | 
FCMT250N65S3 | 17 Weeks | 3,000 | 
  | 
Buy Now | ||||||
 
 | 
FCMT250N65S3 | 18 Weeks | 3,000 | 
  | 
Buy Now | ||||||
 
 | 
FCMT250N65S3 | 22,339 | 
  | 
Get Quote | |||||||
 
 | 
FCMT250N65S3 | 2,340 | 1 | 
  | 
Buy Now | ||||||
Infineon Technologies AG AIKB50N65DF5ATMA1IGBT NPT 650V 50A TO263-3-2 | 
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
 | 
AIKB50N65DF5ATMA1 | Cut Tape | 2,180 | 1 | 
  | 
Buy Now | |||||
 
 | 
AIKB50N65DF5ATMA1 | Reel | 10 Weeks | 1,000 | 
  | 
Buy Now | |||||
 
 | 
AIKB50N65DF5ATMA1 | Cut Tape | 344 | 1 | 
  | 
Buy Now | |||||
Vishay Siliconix SIHP150N60E-GE3E SERIES POWER MOSFET TO-220AB, | 
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
 | 
SIHP150N60E-GE3 | Tube | 1,981 | 1 | 
  | 
Buy Now | |||||
onsemi NTMT150N65S3HFPOWER MOSFET, N-CHANNEL, SUPERFE | 
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
 | 
NTMT150N65S3HF | Cut Tape | 1,875 | 1 | 
  | 
Buy Now | |||||
 
 | 
NTMT150N65S3HF | Cut Tape | 2,961 | 1 | 
  | 
Buy Now | |||||
 
 | 
NTMT150N65S3HF | 3,000 | 
  | 
Buy Now | |||||||
 
 | 
NTMT150N65S3HF | 17 Weeks | 3,000 | 
  | 
Buy Now | ||||||
onsemi NTBL050N65S3HMOSFET - POWER,NCHANNEL, SUPERFE | 
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
 | 
NTBL050N65S3H | Cut Tape | 1,123 | 1 | 
  | 
Buy Now | |||||
 
 | 
NTBL050N65S3H | 13,650 | 1 | 
  | 
Buy Now | ||||||
 
 | 
NTBL050N65S3H | 2,000 | 
  | 
Buy Now | |||||||
 
 | 
NTBL050N65S3H | 21 Weeks | 2,000 | 
  | 
Buy Now | ||||||
 
 | 
NTBL050N65S3H | 22 Weeks | 2,000 | 
  | 
Buy Now | ||||||
50N6 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
50n60b
Abstract: 50n60 50N6 IXGH50N60B 
  | 
 Original  | 
50N60B O-247 O-247AD 728B1 50n60b 50n60 50N6 IXGH50N60B | |
| 
 Contextual Info: IGBT High Speed IXSH 50N60B Short Circuit SOA Capability VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20  | 
 Original  | 
50N60B O-247 | |
50N6
Abstract: xs 004 a 
  | 
 OCR Scan  | 
50N60BD3 OT-227B, 50N6 xs 004 a | |
IXGK50N60A2D1Contextual Info: Advance Technical Data IGBT with Diode 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous  | 
 Original  | 
IXGK50N60A2D1 50N60A2D1 IC110 IF110 50N60B2D1 O-264 PLUS247 405B2 | |
IXGR50N60B2D1
Abstract: 50N60B2 
  | 
 Original  | 
ISOPLUS247TM 50N60B2 50N60B2D1 IC110 IF110 50N60B2D1 ISOPLUS247 2x61-06A 065B1 728B1 IXGR50N60B2D1 | |
| 
 Contextual Info: ! a i x Y S Preliminary data V CES 50N60AU1 50N60AU1S IGBT with Diode ^C25 vw CE sat Combi Pack <?C S h o r t C ir c u it S O A C a p a b ilit y = 600 V = 75 A = 2.7 V TO-247 Hole-less SMD (50N60AU1S) G OE Symbol Test Conditions V CES T j = 25°C to 150 °C  | 
 OCR Scan  | 
IXSX50N60AU1 IXSX50N60AU1S O-247 50N60AU1S) | |
50N60B2
Abstract: 50n60 
  | 
 Original  | 
50N60B2 IC110 O-247 O-268 50N60B2 50n60 | |
| 
 Contextual Info: HiPerFASTTM IGBT IXGN 50N60B VCES IC25 VCE sat tfi(typ) = = = = 600 V 75 A 2.3 V 120ns Preliminary data sheet E Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient  | 
 Original  | 
50N60B 120ns OT-227B E153432 728B1 | |
| 
 Contextual Info: Ultrasonic sensors UZAM 50N6121/S14 Ultrasonic proximity sensors dimension drawing 58,5 70 SW 36 95 14,2 ø 44,5 M30 x 1,5 LED 11 Teach-in M12 x 1 general data photo special type 2 point proximity switch sensing range sd 350 . 2500 mm scanning range far limit Sde  | 
 Original  | 
50N6121/S14 | |
| 
 Contextual Info: Ultrasonic sensors UZAM 50N6121 Ultrasonic proximity sensors dimension drawing 95 70 SW 36 58,5 14,2 ø 44,5 M30 x 1,5 Teach- in LED general data photo special type 2 point proximity switch sensing range sd 350 . 2500 mm scanning range far limit Sde 350 . 2500 mm  | 
 Original  | 
50N6121 | |
| 
 Contextual Info: nixYS IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES ^C25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions v CES ^ 600 V v C0R T j = 25° C to 150° C; RGE= 1 600 V v BES Continuous ±20 V VGEM Transient  | 
 OCR Scan  | 
50N60BU1 50N60BU1 to150 PLUS247TM O-264AA IXSX50N60BU1 | |
50N60A
Abstract: IXGH50N60AS IXGH50N60A 
  | 
 OCR Scan  | 
50N60A 50N60AS O-247 D94006DE, IXGH50N60AS IXGH50N60A | |
50N60
Abstract: G 50N60 IXGH50N50B 
  | 
 OCR Scan  | 
50N50B 50N60B 50N50 50N60 O-247 G 50N60 IXGH50N50B | |
IXGH50N60A
Abstract: 100-200Q IXGH50N60AS 
  | 
 OCR Scan  | 
50N60A 50N60AS O-247 50N60A) B2-91 IXGH50N60A 100-200Q IXGH50N60AS | |
| 
 | 
|||
50N60BD1
Abstract: 60-06A PLUS247 IXGK50N60BD1 
  | 
 Original  | 
50N60BD1 PLUS247 0-06A 50N60BD1 60-06A PLUS247 IXGK50N60BD1 | |
IGBT W 20 NK 50 Z
Abstract: 50N60B IXSH50N60B 
  | 
 Original  | 
50N60B O-247 IGBT W 20 NK 50 Z 50N60B IXSH50N60B | |
50N60C2
Abstract: 50n60 IXGH50N60C2 
  | 
 Original  | 
50N60C2 IC110 O-247 O-268 50N60C2 50n60 IXGH50N60C2 | |
50n60
Abstract: ixsk50n60au1 50N60AU1 
  | 
 Original  | 
50N60AU1 O-264 50n60 ixsk50n60au1 50N60AU1 | |
| 
 Contextual Info: □IXYS IGBT with Diode IXSK 50N60AU1 VC E S I Combi Pack = 600 V = 75 A = 2.7 V C 25 V C E sat Short Circuit S O A Capability ?C G OE Sym bol T est C onditions V CES T j = 25°C to 150°C 600 V VCGR T.J = 25°C to 150°C; Rrp = 1 M£2 Cat 600 V M axim um Ratings  | 
 OCR Scan  | 
50N60AU1 | |
| 
 Contextual Info: □ IXYS IXGK 50N60AU1 Hi Per FAST IGBT with Diode V C ES I C 25 VC E sat Combi Pack tn = = = = 600 V 75 A 2.7 V 275 ns ?C G OE Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20  | 
 OCR Scan  | 
50N60AU1 O-264 | |
BD3 diode
Abstract: 50N60BD2 w a2a 
  | 
 Original  | 
50N60BD2 50N60BD3 Applic100 BD3 diode w a2a | |
IXGX50N60B2D1Contextual Info: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 50N60B2D1 VCES IXGX 50N60B2D1 IC25 VCE sat B2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES  | 
 Original  | 
50N60B2D1 IC110 IF110 O-264 PLUS247 0-06A 065B1 728B1 IXGX50N60B2D1 | |
50N60A
Abstract: IXGH50N60A 
  | 
 Original  | 
50N60A 50N60A IXGH50N60A | |
| 
 Contextual Info: HiPerFAST TM IGBT with Diode IXGK 50N60BD1 IXGX 50N60BD1 Preliminary data VCES IC25 VCE sat tfi = 600 V = 75 A = 2.3 V = 85 ns TO-264 AA (IXGK) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ  | 
 Original  | 
50N60BD1 O-264 PLUS247 | |