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onsemi FCPF250N65S3L1-F154 Power MOSFET, N-Channel, SUPERFET? III, Easy Drive, 650 V, 12 A, 250 mO, TO-220F Ultra narrow lead - Rail/Tube (Alt: FCPF250N65S3L1-F154)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FCPF250N65S3L1-F154	Tube	11,000	32 Weeks	1,000	1 - 10 - 100 - 1000 $1.65 10000 $1.60	Buy Now
Flip Electronics	FCPF250N65S3L1-F154		2,000			1 $0.56 10 $0.56 100 $0.56 1000 $0.56 10000 $0.56	Get Quote
Master Electronics	FCPF250N65S3L1-F154					1 - 10 - 100 - 1000 $1.68 10000 $1.68	Buy Now
Vishay Intertechnologies SIHH250N60EF-T1GE3 N-CHANNEL 600V - Tape and Reel (Alt: SIHH250N60EF-T1GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHH250N60EF-T1GE3	Tape & Reel	3,000	49 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $1.80	Buy Now
TTI	SIHH250N60EF-T1GE3				3,000	1 - 10 - 100 - 1000 - 10000 $1.94	Buy Now
EBV Elektronik	SIHH250N60EF-T1GE3		3,000	42 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bourns Inc BIDW50N65T IGBT, 100 A, 1.65 V, 416 W, 650 V, TO-247, 3 Pins - Rail/Tube (Alt: BIDW50N65T)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	BIDW50N65T	Tube	1,900	16 Weeks	600	1 - 10 - 100 - 1000 $2.70 10000 $2.50	Buy Now
Newark	BIDW50N65T	Bulk	1,454		1	1 $8.81 10 $8.03 100 $6.34 1000 $6.08 10000 $6.08	Buy Now
TTI	BIDW50N65T	Tube			3,000	1 - 10 - 100 - 1000 - 10000 $2.67	Buy Now
Avnet Abacus	BIDW50N65T			17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	BIDW50N65T					1 - 10 - 100 - 1000 $7.20 10000 $2.56	Buy Now
onsemi FCP150N65F Power MOSFET, N Channel, 650 V, 24 A, 0.133 ohm, TO-220, Through Hole - Rail/Tube (Alt: FCP150N65F)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FCP150N65F	Tube	1,600	65 Weeks	50	1 - 10 - 100 $2.66 1000 $2.60 10000 $2.60	Buy Now
Master Electronics	FCP150N65F					1 $6.31 10 $6.31 100 $6.31 1000 $2.74 10000 $2.74	Buy Now
Infineon Technologies AG AIKBE50N65RF5ATMA1 IGBT, 96 A, 1.66 V, 326 W, 650 V, TO-263HV, 7 Pins - Tape and Reel (Alt: AIKBE50N65RF5ATMA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	AIKBE50N65RF5ATMA1	Tape & Reel	1,000	52 Weeks	1,000	1 - 10 - 100 - 1000 $3.93 10000 $3.79	Buy Now

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50N6 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
50n60b Abstract: 50n60 50N6 IXGH50N60B Contextual Info: HiPerFASTTM IGBT IXGH IXGK IXGT IXGJ 50N60B 50N60B 50N60B 50N60B VCES IC25 = 600 = 75 = 2.3 VCE sat tfi(typ) = 120 V A V ns TO-247 AD (IXGH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	50n60b o-247 o-247ad 728b1 +350n60 50n6 ixgh50n60b	PDF
Contextual Info: IGBT High Speed IXSH 50N60B Short Circuit SOA Capability VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20	Original	50n60b o-247	PDF
50N6 Abstract: xs 004 a Contextual Info: ADVANCED TECHNICAL INFORMATION v v IXGN 50N60BD3 HîPerFÂST K1BT with HiPerFRED CES ^C25 CE sat = 600 V • 75 A = 2.5 V Buck configuration Symbol B CM Test Conditions SOT-227B, miniBLOC T, = 25°C to 150°C 600 V T. = 25°C to 150°C; RGE = 1 MO 600	OCR Scan	50n60bd3 ot-227b 50n6 xs 004 a	PDF
IXGK50N60A2D1 Contextual Info: Advance Technical Data IGBT with Diode 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	ixgk50n60a2d1 50n60a2d1 ic110 if110 +450n60b2d1 o-264 plus247 405b2	PDF
IXGR50N60B2D1 Abstract: 50N60B2 Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM IXGR 50N60B2 IXGR 50N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 68 A = 2.2 V = 65 ns Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings	Original	isoplus247tm 50n60b2 50n60b2d1 ic110 +6if110 isoplus247 2x61-06a 065b1 728b1 ixgr50n60b2d1	PDF
Contextual Info: ! a i x Y S Preliminary data V CES 50N60AU1 50N60AU1S IGBT with Diode ^C25 vw CE sat Combi Pack <?C S h o r t C ir c u it S O A C a p a b ilit y = 600 V = 75 A = 2.7 V TO-247 Hole-less SMD (50N60AU1S) G OE Symbol Test Conditions V CES T j = 25°C to 150 °C	OCR Scan	ixsx50n60au1 ixsx50n60au1s o-247 50n60au1s	PDF
50N60B2 Abstract: 50n60 Contextual Info: HiPerFASTTM IGBT B2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 50N60B2 IXGT 50N60B2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	50n60b2 ic110 o-247 o-268 +150n60	PDF
Contextual Info: HiPerFASTTM IGBT IXGN 50N60B VCES IC25 VCE sat tfi(typ) = = = = 600 V 75 A 2.3 V 120ns Preliminary data sheet E Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	50n60b 120ns ot-227b e153432 +1728b1	PDF
Contextual Info: Ultrasonic sensors UZAM 50N6121/S14 Ultrasonic proximity sensors dimension drawing 58,5 70 SW 36 95 14,2 ø 44,5 M30 x 1,5 LED 11 Teach-in M12 x 1 general data photo special type 2 point proximity switch sensing range sd 350 . 2500 mm scanning range far limit Sde	Original	50n6121/s14	PDF
Contextual Info: Ultrasonic sensors UZAM 50N6121 Ultrasonic proximity sensors dimension drawing 95 70 SW 36 58,5 14,2 ø 44,5 M30 x 1,5 Teach- in LED general data photo special type 2 point proximity switch sensing range sd 350 . 2500 mm scanning range far limit Sde 350 . 2500 mm	Original	50n6121	PDF
Contextual Info: nixYS IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES ^C25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions v CES ^ 600 V v C0R T j = 25° C to 150° C; RGE= 1 600 V v BES Continuous ±20 V VGEM Transient	OCR Scan	50n60bu1 to150 plus247tm o-264aa +1ixsx50n60bu1	PDF
50N60A Abstract: IXGH50N60AS IXGH50N60A Contextual Info: HiPerFAST IGBT IXGH 50N60A IXGH 50N60AS VCES lC26 = 600 V = 75 A V = C E s a „ tfi 2 - 7 V = 275 ns Prelim inary data OE Symbol Test Conditions vt c e s Td = 25°C to 150°C vt c g r Tj V G ES v G EM ^C25 ^C90 ^CM SSOA (RBSOA P c Maximum Ratings 600	OCR Scan	50n60a 50n60as o-247 d94006de +2ixgh50n60as ixgh50n60a	PDF
50N60 Abstract: G 50N60 IXGH50N50B Contextual Info: HiPerFAST IGBT IXGH 50N50B IXGH 50N60B VcES ^C25 VCE sai tfi 500 V 75 A 2.3 V 80 ns 600 V 75 A 2.5 V 150 ns Preliminary data <) Symbol Test Conditions Maximum Ratings 50N50 50N60 V CES Tj = 25°C to 150°C 500 600 V VcOR Tj = 25°C to 150°C; RGE = 1 M n	OCR Scan	50n50b 50n60b 50n50 50n60 +3o-247 g 50n60 ixgh50n50b	PDF
IXGH50N60A Abstract: 100-200Q IXGH50N60AS Contextual Info: CUXYS HiPerFAST IGBT Surface Mountable IXGH 50N60A IXGH 50N60AS v CES = = = = ^C25 v CE sat 600 V 75 A 2.7 V 275 ns <) Symbol Test Conditions Maximum Ratings VCEs Tj = 25°C to ISO^C 600 V VCGB Tj = 25°C to 150“C; RQE = 1 M n 600 V V GES Continuous	OCR Scan	50n60a 50n60as o-247 b2-91 +3ixgh50n60a 100-200q ixgh50n60as	PDF

50N60BD1 Abstract: 60-06A PLUS247 IXGK50N60BD1 Contextual Info: IXGK 50N60BD1 IXGX 50N60BD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75	Original	50n60bd1 plus247 0-06a 60-06a +1ixgk50n60bd1	PDF
IGBT W 20 NK 50 Z Abstract: 50N60B IXSH50N60B Contextual Info: IGBT High Speed IXSH 50N60B V`bp I`OR V`bEë~íF Maximum Ratings TO-247 AD Short Circuit SOA Capability = 600 V = 75 A = 2.5 V mêÉäáãáå~êó=Ç~í~=ëÜÉÉí Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	50n60b o-247 igbt w 20 nk 50 z ixsh50n60b	PDF
50N60C2 Abstract: 50n60 IXGH50N60C2 Contextual Info: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 50N60C2 IXGT 50N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20	Original	50n60c2 ic110 o-247 o-268 +250n60 ixgh50n60c2	PDF
50n60 Abstract: ixsk50n60au1 50N60AU1 Contextual Info: IGBT with Diode IXSK 50N60AU1 Combi Pack VCES IC25 VCE sat = 600 V = 75 A = 2.7 V Short Circuit SOA Capability Advanced data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	50n60au1 o-264 50n60 ixsk50n60au1	PDF
Contextual Info: □IXYS IGBT with Diode IXSK 50N60AU1 VC E S I Combi Pack = 600 V = 75 A = 2.7 V C 25 V C E sat Short Circuit S O A Capability ?C G OE Sym bol T est C onditions V CES T j = 25°C to 150°C 600 V VCGR T.J = 25°C to 150°C; Rrp = 1 M£2 Cat 600 V M axim um Ratings	OCR Scan	50n60au1	PDF
Contextual Info: □ IXYS IXGK 50N60AU1 Hi Per FAST IGBT with Diode V C ES I C 25 VC E sat Combi Pack tn = = = = 600 V 75 A 2.7 V 275 ns ?C G OE Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20	OCR Scan	50n60au1 o-264	PDF
BD3 diode Abstract: 50N60BD2 w a2a Contextual Info: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT .BD2 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75	Original	50n60bd2 50n60bd3 applic100 bd3 diode +1w a2a	PDF
IXGX50N60B2D1 Contextual Info: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 50N60B2D1 VCES IXGX 50N60B2D1 IC25 VCE sat B2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	50n60b2d1 ic110 if110 o-264 +5plus247 0-06a 065b1 728b1 ixgx50n60b2d1	PDF
50N60A Abstract: IXGH50N60A Contextual Info: HiPerFASTTM IGBT IXGH 50N60A VCES IC25 VCE sat tfi = = = = 600 V 75 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	50n60a ixgh50n60a	PDF
Contextual Info: HiPerFAST TM IGBT with Diode IXGK 50N60BD1 IXGX 50N60BD1 Preliminary data VCES IC25 VCE sat tfi = 600 V = 75 A = 2.3 V = 85 ns TO-264 AA (IXGK) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	50n60bd1 o-264 plus247	PDF

50N6 Search Results

50N6 Price and Stock

onsemi FCPF250N65S3L1-F154

Vishay Intertechnologies SIHH250N60EF-T1GE3

Bourns Inc BIDW50N65T

onsemi FCP150N65F

Infineon Technologies AG AIKBE50N65RF5ATMA1

50N6 Datasheets Context Search

50n60b

50N6

IXGK50N60A2D1

IXGR50N60B2D1

50N60B2

50N60A

50N60

IXGH50N60A

50N60BD1

IGBT W 20 NK 50 Z

50N60C2

50n60

BD3 diode

IXGX50N60B2D1

50N60A