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    50N6 Search Results

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    onsemi FCMT250N65S3

    MOSFET N-CH 650V 12A POWER88
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    DigiKey () FCMT250N65S3 Cut Tape 5,960 1
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    FCMT250N65S3 Digi-Reel 5,960 1
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    FCMT250N65S3 Reel 3,000 3,000
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    Avnet Americas FCMT250N65S3 Reel 16 Weeks 3,000
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    Rochester Electronics FCMT250N65S3 26,152 1
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    Richardson RFPD FCMT250N65S3 3,000
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    Chip 1 Exchange FCMT250N65S3 3,042
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    Avnet Silica FCMT250N65S3 17 Weeks 3,000
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    EBV Elektronik FCMT250N65S3 18 Weeks 3,000
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    Flip Electronics FCMT250N65S3 22,339
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    Wuhan P&S FCMT250N65S3 2,340 1
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    Infineon Technologies AG AIKB50N65DF5ATMA1

    IGBT NPT 650V 50A TO263-3-2
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    DigiKey () AIKB50N65DF5ATMA1 Cut Tape 2,180 1
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    AIKB50N65DF5ATMA1 Digi-Reel 2,180 1
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    AIKB50N65DF5ATMA1 Reel 2,000 1,000
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    Avnet Americas AIKB50N65DF5ATMA1 Reel 10 Weeks 1,000
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    Newark AIKB50N65DF5ATMA1 Cut Tape 344 1
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    Vishay Siliconix SIHP150N60E-GE3

    E SERIES POWER MOSFET TO-220AB,
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    DigiKey SIHP150N60E-GE3 Tube 1,981 1
    • 1 $4.01
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    onsemi NTMT150N65S3HF

    POWER MOSFET, N-CHANNEL, SUPERFE
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    DigiKey () NTMT150N65S3HF Cut Tape 1,875 1
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    NTMT150N65S3HF Digi-Reel 1,875 1
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    Newark NTMT150N65S3HF Cut Tape 2,961 1
    • 1 $6.09
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    Richardson RFPD NTMT150N65S3HF 3,000
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    Avnet Silica NTMT150N65S3HF 17 Weeks 3,000
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    onsemi NTBL050N65S3H

    MOSFET - POWER,NCHANNEL, SUPERFE
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    DigiKey () NTBL050N65S3H Cut Tape 1,123 1
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    NTBL050N65S3H Digi-Reel 1,123 1
    • 1 $9.96
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    Rochester Electronics NTBL050N65S3H 13,650 1
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    Richardson RFPD NTBL050N65S3H 2,000
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    Avnet Silica NTBL050N65S3H 21 Weeks 2,000
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    EBV Elektronik NTBL050N65S3H 22 Weeks 2,000
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    50N6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    50n60b

    Abstract: 50n60 50N6 IXGH50N60B
    Contextual Info: HiPerFASTTM IGBT IXGH IXGK IXGT IXGJ 50N60B 50N60B 50N60B 50N60B VCES IC25 = 600 = 75 = 2.3 VCE sat tfi(typ) = 120 V A V ns TO-247 AD (IXGH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


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    50N60B O-247 O-247AD 728B1 50n60b 50n60 50N6 IXGH50N60B PDF

    Contextual Info: IGBT High Speed IXSH 50N60B Short Circuit SOA Capability VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20


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    50N60B O-247 PDF

    50N6

    Abstract: xs 004 a
    Contextual Info: ADVANCED TECHNICAL INFORMATION v v IXGN 50N60BD3 HîPerFÂST K1BT with HiPerFRED CES ^C25 CE sat = 600 V • 75 A = 2.5 V Buck configuration Symbol B CM Test Conditions SOT-227B, miniBLOC T, = 25°C to 150°C 600 V T. = 25°C to 150°C; RGE = 1 MO 600


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    50N60BD3 OT-227B, 50N6 xs 004 a PDF

    IXGK50N60A2D1

    Contextual Info: Advance Technical Data IGBT with Diode 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


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    IXGK50N60A2D1 50N60A2D1 IC110 IF110 50N60B2D1 O-264 PLUS247 405B2 PDF

    IXGR50N60B2D1

    Abstract: 50N60B2
    Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM IXGR 50N60B2 IXGR 50N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 68 A = 2.2 V = 65 ns Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings


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    ISOPLUS247TM 50N60B2 50N60B2D1 IC110 IF110 50N60B2D1 ISOPLUS247 2x61-06A 065B1 728B1 IXGR50N60B2D1 PDF

    Contextual Info: ! a i x Y S Preliminary data V CES 50N60AU1 50N60AU1S IGBT with Diode ^C25 vw CE sat Combi Pack <?C S h o r t C ir c u it S O A C a p a b ilit y = 600 V = 75 A = 2.7 V TO-247 Hole-less SMD (50N60AU1S) G OE Symbol Test Conditions V CES T j = 25°C to 150 °C


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    IXSX50N60AU1 IXSX50N60AU1S O-247 50N60AU1S) PDF

    50N60B2

    Abstract: 50n60
    Contextual Info: HiPerFASTTM IGBT B2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 50N60B2 IXGT 50N60B2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30


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    50N60B2 IC110 O-247 O-268 50N60B2 50n60 PDF

    Contextual Info: HiPerFASTTM IGBT IXGN 50N60B VCES IC25 VCE sat tfi(typ) = = = = 600 V 75 A 2.3 V 120ns Preliminary data sheet E Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient


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    50N60B 120ns OT-227B E153432 728B1 PDF

    Contextual Info: Ultrasonic sensors UZAM 50N6121/S14 Ultrasonic proximity sensors dimension drawing 58,5 70 SW 36 95 14,2 ø 44,5 M30 x 1,5 LED 11 Teach-in M12 x 1 general data photo special type 2 point proximity switch sensing range sd 350 . 2500 mm scanning range far limit Sde


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    50N6121/S14 PDF

    Contextual Info: Ultrasonic sensors UZAM 50N6121 Ultrasonic proximity sensors dimension drawing 95 70 SW 36 58,5 14,2 ø 44,5 M30 x 1,5 Teach- in LED general data photo special type 2 point proximity switch sensing range sd 350 . 2500 mm scanning range far limit Sde 350 . 2500 mm


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    50N6121 PDF

    Contextual Info: nixYS IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES ^C25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions v CES ^ 600 V v C0R T j = 25° C to 150° C; RGE= 1 600 V v BES Continuous ±20 V VGEM Transient


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    50N60BU1 50N60BU1 to150 PLUS247TM O-264AA IXSX50N60BU1 PDF

    50N60A

    Abstract: IXGH50N60AS IXGH50N60A
    Contextual Info: HiPerFAST IGBT IXGH 50N60A IXGH 50N60AS VCES lC26 = 600 V = 75 A V = C E s a „ tfi 2 - 7 V = 275 ns Prelim inary data OE Symbol Test Conditions vt c e s Td = 25°C to 150°C vt c g r Tj V G ES v G EM ^C25 ^C90 ^CM SSOA (RBSOA P c Maximum Ratings 600


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    50N60A 50N60AS O-247 D94006DE, IXGH50N60AS IXGH50N60A PDF

    50N60

    Abstract: G 50N60 IXGH50N50B
    Contextual Info: HiPerFAST IGBT IXGH 50N50B IXGH 50N60B VcES ^C25 VCE sai tfi 500 V 75 A 2.3 V 80 ns 600 V 75 A 2.5 V 150 ns Preliminary data <) Symbol Test Conditions Maximum Ratings 50N50 50N60 V CES Tj = 25°C to 150°C 500 600 V VcOR Tj = 25°C to 150°C; RGE = 1 M n


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    50N50B 50N60B 50N50 50N60 O-247 G 50N60 IXGH50N50B PDF

    IXGH50N60A

    Abstract: 100-200Q IXGH50N60AS
    Contextual Info: CUXYS HiPerFAST IGBT Surface Mountable IXGH 50N60A IXGH 50N60AS v CES = = = = ^C25 v CE sat 600 V 75 A 2.7 V 275 ns <) Symbol Test Conditions Maximum Ratings VCEs Tj = 25°C to ISO^C 600 V VCGB Tj = 25°C to 150“C; RQE = 1 M n 600 V V GES Continuous


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    50N60A 50N60AS O-247 50N60A) B2-91 IXGH50N60A 100-200Q IXGH50N60AS PDF

    50N60BD1

    Abstract: 60-06A PLUS247 IXGK50N60BD1
    Contextual Info: IXGK 50N60BD1 IXGX 50N60BD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75


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    50N60BD1 PLUS247 0-06A 50N60BD1 60-06A PLUS247 IXGK50N60BD1 PDF

    IGBT W 20 NK 50 Z

    Abstract: 50N60B IXSH50N60B
    Contextual Info: IGBT High Speed IXSH 50N60B V`bp I`OR V`bEë~íF Maximum Ratings TO-247 AD Short Circuit SOA Capability = 600 V = 75 A = 2.5 V mêÉäáãáå~êó=Ç~í~=ëÜÉÉí Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    50N60B O-247 IGBT W 20 NK 50 Z 50N60B IXSH50N60B PDF

    50N60C2

    Abstract: 50n60 IXGH50N60C2
    Contextual Info: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 50N60C2 IXGT 50N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20


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    50N60C2 IC110 O-247 O-268 50N60C2 50n60 IXGH50N60C2 PDF

    50n60

    Abstract: ixsk50n60au1 50N60AU1
    Contextual Info: IGBT with Diode IXSK 50N60AU1 Combi Pack VCES IC25 VCE sat = 600 V = 75 A = 2.7 V Short Circuit SOA Capability Advanced data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


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    50N60AU1 O-264 50n60 ixsk50n60au1 50N60AU1 PDF

    Contextual Info: □IXYS IGBT with Diode IXSK 50N60AU1 VC E S I Combi Pack = 600 V = 75 A = 2.7 V C 25 V C E sat Short Circuit S O A Capability ?C G OE Sym bol T est C onditions V CES T j = 25°C to 150°C 600 V VCGR T.J = 25°C to 150°C; Rrp = 1 M£2 Cat 600 V M axim um Ratings


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    50N60AU1 PDF

    Contextual Info: □ IXYS IXGK 50N60AU1 Hi Per FAST IGBT with Diode V C ES I C 25 VC E sat Combi Pack tn = = = = 600 V 75 A 2.7 V 275 ns ?C G OE Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20


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    50N60AU1 O-264 PDF

    BD3 diode

    Abstract: 50N60BD2 w a2a
    Contextual Info: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT .BD2 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75


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    50N60BD2 50N60BD3 Applic100 BD3 diode w a2a PDF

    IXGX50N60B2D1

    Contextual Info: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 50N60B2D1 VCES IXGX 50N60B2D1 IC25 VCE sat B2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES


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    50N60B2D1 IC110 IF110 O-264 PLUS247 0-06A 065B1 728B1 IXGX50N60B2D1 PDF

    50N60A

    Abstract: IXGH50N60A
    Contextual Info: HiPerFASTTM IGBT IXGH 50N60A VCES IC25 VCE sat tfi = = = = 600 V 75 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient


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    50N60A 50N60A IXGH50N60A PDF

    Contextual Info: HiPerFAST TM IGBT with Diode IXGK 50N60BD1 IXGX 50N60BD1 Preliminary data VCES IC25 VCE sat tfi = 600 V = 75 A = 2.3 V = 85 ns TO-264 AA (IXGK) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    50N60BD1 O-264 PLUS247 PDF