50N60 Search Results
50N60 Price and Stock
Vishay Intertechnologies SIHH250N60EF-T1GE3N-CHANNEL 600V - Tape and Reel (Alt: SIHH250N60EF-T1GE3) |
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SIHH250N60EF-T1GE3 | Tape & Reel | 3,000 | 49 Weeks | 3,000 |
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SIHH250N60EF-T1GE3 | 3,000 |
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SIHH250N60EF-T1GE3 | 3,000 | 42 Weeks | 3,000 |
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Vishay Intertechnologies SIHG050N60E-GE3N-CHANNEL 600V - Tape and Reel (Alt: SIHG050N60E-GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHG050N60E-GE3 | Tape & Reel | 500 | 45 Weeks | 500 |
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SIHG050N60E-GE3 | Tube | 500 | 50 |
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SIHG050N60E-GE3 | 500 | 39 Weeks | 25 |
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Infineon Technologies AG IKFW50N60DH3XKSA1- Rail/Tube (Alt: IKFW50N60DH3XKSA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IKFW50N60DH3XKSA1 | Tube | 240 | 36 Weeks | 1 |
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IKFW50N60DH3XKSA1 | 90 | 1 |
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IKFW50N60DH3XKSA1 | 37 Weeks | 240 |
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IKFW50N60DH3XKSA1 | 9,837 |
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onsemi NGTB50N60FWGIGBT, 600 V, 50 A - Rail/Tube (Alt: NGTB50N60FWG) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NGTB50N60FWG | Tube | 300 |
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NGTB50N60FWG | 10,950 | 1 |
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NGTB50N60FWG | 60 |
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NGTB50N60FWG | 8,058 |
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Infineon Technologies AG IKFW50N60DH3EXKSA1- Rail/Tube (Alt: IKFW50N60DH3EXKSA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IKFW50N60DH3EXKSA1 | Tube | 36 Weeks | 240 |
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IKFW50N60DH3EXKSA1 | Bulk | 1 |
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IKFW50N60DH3EXKSA1 | 1 |
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IKFW50N60DH3EXKSA1 | 37 Weeks | 240 |
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IKFW50N60DH3EXKSA1 | 8,850 |
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50N60 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
50n60b
Abstract: 50n60 50N6 IXGH50N60B
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50n60bo-247o-247ad728b1+3 | |
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Contextual Info: IGBT High Speed IXSH 50N60B Short Circuit SOA Capability VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 |
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50n60bo-247 | |
50N6
Abstract: xs 004 a
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OCR Scan |
50n60bd3ot-227b50n6xs 004 a | |
IXGK50N60A2D1Contextual Info: Advance Technical Data IGBT with Diode 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous |
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ixgk50n60a2d150n60a2d1ic110if110+4 | |
IXGR50N60B2D1
Abstract: 50N60B2
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isoplus247tm50n60b250n60b2d1ic110+6 | |
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Contextual Info: ! a i x Y S Preliminary data V CES 50N60AU1 50N60AU1S IGBT with Diode ^C25 vw CE sat Combi Pack <?C S h o r t C ir c u it S O A C a p a b ilit y = 600 V = 75 A = 2.7 V TO-247 Hole-less SMD (50N60AU1S) G OE Symbol Test Conditions V CES T j = 25°C to 150 °C |
OCR Scan |
ixsx50n60au1ixsx50n60au1so-24750n60au1s | |
50N60B2
Abstract: 50n60
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50n60b2ic110o-247o-268+1 | |
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Contextual Info: HiPerFASTTM IGBT IXGN 50N60B VCES IC25 VCE sat tfi(typ) = = = = 600 V 75 A 2.3 V 120ns Preliminary data sheet E Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient |
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50n60b120nsot-227be153432+1 | |
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Contextual Info: nixYS IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES ^C25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions v CES ^ 600 V v C0R T j = 25° C to 150° C; RGE= 1 600 V v BES Continuous ±20 V VGEM Transient |
OCR Scan |
50n60bu1to150plus247tmo-264aa+1 | |
50N60A
Abstract: IXGH50N60AS IXGH50N60A
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OCR Scan |
50n60a50n60aso-247d94006de+2 | |
50N60
Abstract: G 50N60 IXGH50N50B
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OCR Scan |
50n50b50n60b50n5050n60+3 | |
IXGH50N60A
Abstract: 100-200Q IXGH50N60AS
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OCR Scan |
50n60a50n60aso-247b2-91+3 | |
50n60
Abstract: G 50N60 50n80 bi-directional switches IGBT induction heat resonant TO-247 D-68623
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50n8050n60o-247g 50n60+4 | |
50N60BD1
Abstract: 60-06A PLUS247 IXGK50N60BD1
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50n60bd1plus2470-06a60-06a+1 | |
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50N60C2
Abstract: 50n60 IXGH50N60C2
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50n60c2ic110o-247o-268+2 | |
50n60
Abstract: ixsk50n60au1 50N60AU1
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50n60au1o-26450n60ixsk50n60au1 | |
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Contextual Info: □IXYS IGBT with Diode IXSK 50N60AU1 VC E S I Combi Pack = 600 V = 75 A = 2.7 V C 25 V C E sat Short Circuit S O A Capability ?C G OE Sym bol T est C onditions V CES T j = 25°C to 150°C 600 V VCGR T.J = 25°C to 150°C; Rrp = 1 M£2 Cat 600 V M axim um Ratings |
OCR Scan |
50n60au1 | |
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Contextual Info: □ IXYS IXGK 50N60AU1 Hi Per FAST IGBT with Diode V C ES I C 25 VC E sat Combi Pack tn = = = = 600 V 75 A 2.7 V 275 ns ?C G OE Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 |
OCR Scan |
50n60au1o-264 | |
BD3 diode
Abstract: 50N60BD2 w a2a
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Original |
50n60bd250n60bd3applic100bd3 diode+1 | |
IXGX50N60B2D1Contextual Info: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 50N60B2D1 VCES IXGX 50N60B2D1 IC25 VCE sat B2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES |
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50n60b2d1ic110if110o-264+5 | |
50N60A
Abstract: IXGH50N60A
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Original |
50n60aixgh50n60a | |
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Contextual Info: HiPerFAST TM IGBT with Diode IXGK 50N60BD1 IXGX 50N60BD1 Preliminary data VCES IC25 VCE sat tfi = 600 V = 75 A = 2.3 V = 85 ns TO-264 AA (IXGK) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ |
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50n60bd1o-264plus247 | |
2X61 06a
Abstract: ISOPLUS247
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Original |
50n60c250n60c2d1ic1102x61-06a+5 | |
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Contextual Info: □ IXYS Preliminary data HiPerFAST IGBT IXGN 50N60B V CES I C25 V CE sat = 600 V = 75 A = 2.5 V « Maximum Ratings Symbol Test Conditions VCES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i 600 V VGES Continuous ±20 V VGEM Transient |
OCR Scan |
50n60b | |