50N60B Search Results
50N60B Price and Stock
IXYS Corporation IXXH50N60B3IGBTs GenX3 600V XPT IGBTs |
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IXXH50N60B3 | 241 |
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IXXH50N60B3 | Tube | 300 |
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IXXH50N60B3 | 300 |
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IXYS Corporation IXXH50N60B3D1IGBTs XPT 600V IGBT GenX3 XPT IGBT |
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IXXH50N60B3D1 | 182 |
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IXXH50N60B3D1 | Tube | 300 |
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IXXH50N60B3D1 | 1 |
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IXYS Corporation IXYN150N60B3IGBTs SOT227 600V 140A GENX3 |
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IXYN150N60B3 | 171 |
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IXYN150N60B3 | Tube | 10 |
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IXYN150N60B3 | 1 |
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IXYS Corporation IXSJ50N60B4D1NTC Thermistors 34 Amps 600V 2 Rds |
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IXSJ50N60B4D1 |
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IXYS Corporation IXXP50N60B3IGBTs TO220 600V 50A IGBT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXXP50N60B3 |
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IXXP50N60B3 | Tube | 300 |
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IXXP50N60B3 | 1 |
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50N60B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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50n60b
Abstract: 50n60 50N6 IXGH50N60B
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50n60bo-247o-247ad728b1+3 | |
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Contextual Info: IGBT High Speed IXSH 50N60B Short Circuit SOA Capability VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 |
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50n60bo-247 | |
50N6
Abstract: xs 004 a
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OCR Scan |
50n60bd3ot-227b50n6xs 004 a | |
IXGR50N60B2D1
Abstract: 50N60B2
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isoplus247tm50n60b250n60b2d1ic110+6 | |
50N60B2
Abstract: 50n60
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50n60b2ic110o-247o-268+1 | |
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Contextual Info: HiPerFASTTM IGBT IXGN 50N60B VCES IC25 VCE sat tfi(typ) = = = = 600 V 75 A 2.3 V 120ns Preliminary data sheet E Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient |
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50n60b120nsot-227be153432+1 | |
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Contextual Info: nixYS IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES ^C25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions v CES ^ 600 V v C0R T j = 25° C to 150° C; RGE= 1 600 V v BES Continuous ±20 V VGEM Transient |
OCR Scan |
50n60bu1to150plus247tmo-264aa+1 | |
50N60
Abstract: G 50N60 IXGH50N50B
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OCR Scan |
50n50b50n60b50n5050n60+3 | |
50N60BD1
Abstract: 60-06A PLUS247 IXGK50N60BD1
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50n60bd1plus2470-06a60-06a+1 | |
IGBT W 20 NK 50 Z
Abstract: 50N60B IXSH50N60B
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50n60bo-247igbt w 20 nk 50 zixsh50n60b | |
BD3 diode
Abstract: 50N60BD2 w a2a
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50n60bd250n60bd3applic100bd3 diode+1 | |
IXGX50N60B2D1Contextual Info: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 50N60B2D1 VCES IXGX 50N60B2D1 IC25 VCE sat B2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES |
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50n60b2d1ic110if110o-264+5 | |
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Contextual Info: HiPerFAST TM IGBT with Diode IXGK 50N60BD1 IXGX 50N60BD1 Preliminary data VCES IC25 VCE sat tfi = 600 V = 75 A = 2.3 V = 85 ns TO-264 AA (IXGK) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ |
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50n60bd1o-264plus247 | |
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Contextual Info: □ IXYS Preliminary data HiPerFAST IGBT IXGN 50N60B V CES I C25 V CE sat = 600 V = 75 A = 2.5 V « Maximum Ratings Symbol Test Conditions VCES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i 600 V VGES Continuous ±20 V VGEM Transient |
OCR Scan |
50n60b | |
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Contextual Info: HiPerFASTTM IGBT IXGH IXGK IXGT IXGJ 50N60B 50N60B 50N60B 50N60B VCES IC25 = 600 = 75 = 2.3 VCE sat tfi(typ) = 120 V A V ns TO-247 AD (IXGH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous |
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50n60bo-247728b1 | |
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Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM IXGR 50N60B2 IXGR 50N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 68 A = 2.2 V = 65 ns Preliminary Data Sheet IXGR_B2 Symbol Test Conditions V CES TJ = 25°C to 150°C |
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isoplus247tm50n60b250n60b2d1isoplus247+5 | |
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Contextual Info: n î Y V JlQO ÌmI X A HiPerFAST IGBT with HiPerFRED IXGN 50N60BD3 V CES I C25 V CE sat = 600 V = 75 A = 2.5 V Buck configuration Preliminary data sheet Sym bol tù ¡ l i Test C onditions V CES ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 MQ |
OCR Scan |
50n60bd3ot-227b | |
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Contextual Info: IXSN 50N60BD2 IXSN 50N60BD3 HIGH Speed IGBT with HiPerFRED Short Circuit SOA Capability Buck & boost configurations IGBT Preliminary data .BD2 .BD3 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW |
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50n60bd250n60bd360-06b | |
50N60
Abstract: G 50N60 50n60b IXGH50N50B IXGH50N60B
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OCR Scan |
50n50b50n60b50n5050n60+4 | |
50N60B
Abstract: nkmm
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50n60bo-268nkmm | |
50n60
Abstract: 50N50B IXGH50N50B IXGH50N60B
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OCR Scan |
50n50b50n60b50n5050n60+5 | |
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Contextual Info: HiPerFAST IGBT with HiPerFRED IXGN 50N60BD3 V CES I C25 v CE sat = 600 V = 75 A = 2.5 V Buck configuration •V• - Preliminary data sheet t- BQ Symbol Test Conditions V CES Tj = 25° C to 150° C v CGR T.J V ¥ ges À Maximum Ratings 600 V 600 V Continuous |
OCR Scan |
50n60bd3ot-227b | |
IXGH50N60BContextual Info: HiPerFASTTM IGBT IXGH 50N60B IXGK 50N60B IXGT 50N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75 A IC90 TC = 90°C ICM TC = 25°C, 1 ms |
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50n60bo-247o-268o-264+2 | |
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Contextual Info: IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous |
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50n60bu1plus247o-264 | |