50N60BD1 Search Results

50N60BD1

Abstract: 60-06A PLUS247 IXGK50N60BD1
Contextual Info: IXGK 50N60BD1 IXGX 50N60BD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75

Contextual Info: HiPerFAST TM IGBT with Diode IXGK 50N60BD1 IXGX 50N60BD1 Preliminary data VCES IC25 VCE sat tfi = 600 V = 75 A = 2.3 V = 85 ns TO-264 AA (IXGK) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

Contextual Info: IXGK 50N60BD1 IXGX 50N60BD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75

50N60BD1

Abstract: TO-264 Jedec package outline
Contextual Info: IXGK 50N60BD1 IXGX 50N60BD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75

50n60

Abstract: 50N6 2X61 50N60B 50N60BD1
Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 50N60B IXGR 50N60BD1 IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) = 600 V = 75 A = 2.5 V = 85 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

IXGL50N60BD1

Abstract: ixgl50n60
Contextual Info: HiPerFASTTM IGBT ISOPLUS264TM IXGL 50N60BD1 VCES IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) = 600 V = 75 A = 2.3 V = 85 ns Preliminary data sheet (D1) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

50n60

Abstract: 2X61 50n60b 50N60BD1
Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 50N60B IXGR 50N60BD1 IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) = 600 V = 75 A = 2.5 V = 120 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR

Contextual Info: IGBT with Diode IXSK 50N60BD1 IXSX 50N60BD1 VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings C (TAB) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES

50N60BD1

Abstract: 50N6 PLUS247 50n60
Contextual Info: IGBT with Diode IXSK 50N60BD1 IXSX 50N60BD1 VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings C (TAB) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES

IXSK50N60BD1

Abstract: 50N60BD1
Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 50N60BD1 VCES IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.5 V = 150 ns Short Circuit SOA Capability Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600

Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 50N60B IXGR 50N60BD1 IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) = 600 V = 75 A = 2.5 V = 85 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

50N60BD1

Abstract: 50N60B
Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 50N60B IXGR 50N60BD1 IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) = 600 V = 75 A = 2.3 V = 85 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR

50n60

Contextual Info: IGBT with Diode IXSK 50N60BD1 IXSX 50N60BD1 VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings C (TAB) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES

b1113

Abstract: diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14
Contextual Info: SCSOA IGBT S-Series Contents IGBT with Fast Diode VCES max IC Low VCE sat TC = 25 °C VCE(sat) max PLUS247 ISOPLUS (IXSX) 247TM (IXSR) TC = 25 °C TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page V A V 600 32 1.8 ➤IXSH 16N60U1 B1-4 48 2.2

12n60c

Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Contextual Info: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM

2QN60

Abstract: ixgh 1500
Contextual Info: IGBT with Diode /G ^ S p e e , S = Suffix c G series high gain, high speed V Type t jm = 150° c >- New { IXGA 12N100U1 IXGP 12N100U1 IXGH 12N100U1 I j £ 1 S. Î I* IXGH > IXGH IXGH IXGH IXGH 17N100U1 40N30BD1 22N50BU1 24N50BU1 32N50BU1 V IXGH IXGH IXGH

DSE 130 -06A

Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01