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Littelfuse Inc IXXH30N60B3D1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	IXXH30N60B3D1		300			1 - 10 - 100 $4.82 1000 $3.46 10000 $3.30	Buy Now
RS	IXXH30N60B3D1	Bulk		8 Weeks	30	1 - 10 - 100 $7.69 1000 $7.69 10000 $7.69	Get Quote
Microchip Technology Inc APT30N60BC6 MOSFET (Metal Oxide) Transistor - N-Channel - 600 V - 30A Continuous Drain (Id) @ 25°C - 125mOhm @ 14.5A 10V - TO-247-3 Package - Through Hole.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	APT30N60BC6					1 - 10 $5.46 100 $4.82 1000 $4.51 10000 $4.41	Buy Now
Avnet Americas	APT30N60BC6	Tube		20 Weeks	100	1 - 10 - 100 $5.56 1000 $4.99 10000 $4.86	Buy Now
Newark	APT30N60BC6	Bulk			250	1 - 10 - 100 - 1000 $4.70 10000 $4.70	Buy Now
Microchip Technology Inc	APT30N60BC6	Tube		28 Weeks		1 $5.64 10 $5.64 100 $4.87 1000 $4.47 10000 $4.32	Buy Now
Avnet Silica	APT30N60BC6			22 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

EBV Elektronik	APT30N60BC6			21 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	APT30N60BC6		2,954			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi HGTG30N60B3 Single Igbt, 600V, 60A; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.45V; Power Dissipation:208W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- Rohs Compliant: Yes
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	HGTG30N60B3	Bulk	1		1	1 $5.63 10 $4.90 100 $3.55 1000 $2.93 10000 $2.93	Buy Now
Bristol Electronics	HGTG30N60B3		57		1	1 $5.02 10 $3.26 100 $2.36 1000 $2.36 10000 $2.36	Buy Now
IXYS Corporation IXXH30N60B3D1 Transistor, Igbt, 600V, 60A, To-247Ad; \|Ixys Semiconductor IXXH30N60B3D1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXXH30N60B3D1	Bulk	1		1	1 $10.09 10 $8.91 100 $6.16 1000 $5.65 10000 $5.65	Buy Now
TTI	IXXH30N60B3D1	Tube	30		30	1 - 10 - 100 $4.54 1000 $3.63 10000 $3.63	Buy Now
TME	IXXH30N60B3D1		290		1	1 $7.70 10 $5.76 100 $5.53 1000 $5.53 10000 $5.53	Buy Now
Littelfuse Inc IXXH30N60B3 Disc Igbt Xpt-Genx3 To-247Ad/ Tube; \|Littelfuse IXXH30N60B3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXXH30N60B3	Bulk			300	1 - 10 - 100 - 1000 $3.25 10000 $3.05	Buy Now
RS	IXXH30N60B3	Bulk		8 Weeks	30	1 - 10 - 100 $4.67 1000 $4.67 10000 $4.67	Get Quote

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30N60B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
30n60b Abstract: 30N60 30N60C ic 931 Contextual Info: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	30n60b 30n60c o-268 o-247 +230n60 ic 931	PDF
30n60 Abstract: 30N60B2 Contextual Info: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGP 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30n60b2 ic110 o-220 30n60	PDF
30N60B2 Contextual Info: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60B2 IXGT 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30n60b2 ic110 o-268	PDF
30n60c Contextual Info: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Preliminary Data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW	Original	30n60b 30n60c o-247 o-268	PDF
Contextual Info: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30n60b2d1 ic110	PDF
Contextual Info: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	30n60b 30n60c o-268	PDF
1XYS Contextual Info: a ix Y S 1 Preliminary Data Sheet v CES IXGH 30N60B IXGH 30N60BS ^C25 vv CE sat HiPerFAST IGBT = 600 V = 60 A = 1.8 V = 130 ns tfi TO-247 SMD (30N60BS) Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RQE= 1 M il	OCR Scan	30n60b 30n60bs 13/10nm/lb o-247 +11xys	PDF
30n60b Abstract: 30n60 TO-247AA 15a020 Contextual Info: HiPerFASTTM IGBT with Diode IXGH 30N60BU1 IXGT 30N60BU1 Combi Pack VCES IC25 VCE sat tfi = 600 V = 60 A = 1.8 V = 100 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	30n60bu1 o-268 ic110 o-247 +5728b1 30n60b 30n60 to-247aa 15a020	PDF
Contextual Info: HiPerFASTTM IGBT with Diode IXGH 30N60BU1 VCES IXGT 30N60BU1 IC25 VCE sat tfi = 600 V = 60 A = 1.8 V = 100 ns TO-268 (IXGT) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous	Original	30n60bu1 o-268 ic110	PDF
Contextual Info: I Z II X Y S HiPerFAST IGBT with Diode V.CES IXGH 30N60BD1 IXGT 30N60BD1 600 60 1.8 C25 CE sat V A V 100 ns tfi(typ) Preliminary data sheet Maximum Ratings Symbol TestC onditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i	OCR Scan	30n60bd1 o-268 o-247	PDF
30N60B2D1 Abstract: ixgh30n60b2d1 Contextual Info: Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions IXGH 30N60B2D1 VCES IXGT 30N60B2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30n60b2d1 ic110 o-247 o-268 +4728b1 123b1 065b1 ixgh30n60b2d1	PDF
Contextual Info: HiPerFASTTM IGBT with Diode VCES = 600 V IC25 = 60 A VCE sat = 1.8 V tfi(typ) = 100 ns IXGH 30N60BD1 IXGT 30N60BD1 Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V	Original	30n60bd1 o-247 o-268	PDF
30N60B Abstract: 30N60C Contextual Info: High Speed IGBT VCES Short Circuit SOA Capability IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	30n60b 30n60c o-247 o-268	PDF
4013V Abstract: Siemens DIODE E 1220 30N60B2D1 Contextual Info: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30n60b2d1 ic110 o-247 o-268 +24013v siemens diode e 1220	PDF

30N60 Contextual Info: OIXYS Prelim inary Data Sheet HiPerFAST IGBT with Diode 30N60BU1 30N60BU1S v CES ^C25 vCE sat tfi 600 V 60 A 1.8 V 130 ns Combi Pack TO-247 SMD (30N60BU1S) Symbol Test Conditions VCES ^ VCGR Maximum Ratings C (TAB) = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 MO	OCR Scan	ixgh30n60bu1 ixgh30n60bu1s o-247 30n60bu1s +3ixgh3qn60bu1 ixgh30n6qbu1s 30n60	PDF
Contextual Info: Advance Technical Data HiPerFASTTM IGBT IXGH 30N60B2 IXGT 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600	Original	30n60b2 ic110 o-268 o-247	PDF
30N60BD Contextual Info: nixYS Advanced Technical Information HiPerFAST IGBT with Diode IXGH 30N60BD1 IXGT 30N60BD1 ^fi typ Symbol Test Conditions VCEs Tj = 25°Cto 150UC 600 V v CGB T,J = 25cC to 150°C ;R Cat =1 MU 600 V v G ES Continuous +20 V VG EM Transient ±30 V ^C25 Tc =25°C	OCR Scan	30n60bd1 150uc o-268 o-247 +215bsc 30n60bd	PDF
30n60 Contextual Info: HiPerFASTTM IGBT with Diode IXGH 30N60BD1 VCES IXGT 30N60BD1 I C25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	30n60bd1 o-247 o-268 30n60	PDF
Contextual Info: Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions IXGH 30N60B2D1 VCES IXGT 30N60B2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30n60b2d1 ic110 o-247 728b1 +2123b1 065b1	PDF
30N60BD1 Abstract: TO-264 Jedec package outline Contextual Info: High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 Short Circuit SOA Capability Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 55 A	Original	30n60bd1 to-264 jedec package outline	PDF
30N60B2D1 Abstract: IXGH30N60B2D1 30N60B2D 30n60b 30N60B2 DSEP 12A Contextual Info: Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions IXGH 30N60B2D1 VCES IXGT 30N60B2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30n60b2d1 ic110 o-247 728b1 +7123b1 065b1 ixgh30n60b2d1 30n60b2d 30n60b 30n60b2 dsep 12a	PDF
30N60BS Contextual Info: HiPerFAST IGBT VCES IXGH 30N60B IXGH 30N60BS ^C25 VCE sat = 600 V = 60 A = 1.8V = 130 ns P relim in ary data Symbol Test Conditions V CES T j = 25°C to 150°C Maximum Ratings 600 V vCGR T j = 25°C to 150“C; RGE = 1 MD 600 V v GES vGEM Continuous ±20	OCR Scan	30n60b 30n60bs o-247	PDF
30n60 Contextual Info: High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	30n60bd1 o-247ad o-268 o-264 +130n60	PDF
30N60BD1 Abstract: ICP-F50 Contextual Info: HiPerFASTTM IGBT with Diode IXGH 30N60BD1 VCES IXGT 30N60BD1 I C25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	30n60bd1 o-268 o-247 icp-f50	PDF

30N60B Search Results

30N60B Price and Stock

Littelfuse Inc IXXH30N60B3D1

Microchip Technology Inc APT30N60BC6

onsemi HGTG30N60B3

IXYS Corporation IXXH30N60B3D1

Littelfuse Inc IXXH30N60B3

30N60B Datasheets Context Search

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1XYS

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30N60B2D1

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4013V

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30N60B2D1

30N60BS

30n60

30N60BD1