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30N60C Datasheets (2)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
30N60C3		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.6KB	1
30N60C3D		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.6KB	1

30N60C Price and Stock

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onsemi HGTG30N60C3D 600V, PT IGBT - Rail/Tube (Alt: HGTG30N60C3D)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	HGTG30N60C3D	Tube			450	1 - 10 - 100 - 1000 $5.74 10000 $5.53	Get Quote
RS	HGTG30N60C3D	Bulk			1	1 $12.00 10 $12.00 100 $12.00 1000 $12.00 10000 $12.00	Get Quote
Flip Electronics	HGTG30N60C3D		780			1 $4.59 10 $4.59 100 $4.59 1000 $4.59 10000 $4.59	Get Quote
Infineon Technologies AG AIKW30N60CTXKSA1 - Rail/Tube (Alt: AIKW30N60CTXKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	AIKW30N60CTXKSA1	Tube		52 Weeks	240	1 - 10 - 100 - 1000 $3.60 10000 $3.42	Buy Now
Newark	AIKW30N60CTXKSA1	Bulk	309		1	1 $9.88 10 $6.42 100 $5.64 1000 $5.06 10000 $5.06	Buy Now
TME	AIKW30N60CTXKSA1				1	1 $7.66 10 $7.66 100 $5.01 1000 $4.74 10000 $4.74	Get Quote
EBV Elektronik	AIKW30N60CTXKSA1			40 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	AIKW30N60CTXKSA1		5,424			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SIPC30N60C3X1SA2 - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIPC30N60C3X1SA2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIPC30N60C3X1SA2	Waffle Pack			132	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Littelfuse Inc IXXH30N60C3D1 Transistor, Igbt, 600V, 60A, To-247Ad; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:270W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXXH30N60C3D1	Bulk	292		1	1 $9.91 10 $8.62 100 $5.70 1000 $5.24 10000 $5.24	Buy Now
RS	IXXH30N60C3D1	Bulk		8 Weeks	30	1 - 10 - 100 $7.71 1000 $7.71 10000 $7.71	Get Quote
Littelfuse Inc IXGH30N60C3D1 Transistor, Igbt, 600V, 60A, To-247; \|Littelfuse IXGH30N60C3D1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXGH30N60C3D1	Bulk	288		1	1 $12.17 10 $10.79 100 $7.59 1000 $6.99 10000 $6.99	Buy Now
RS	IXGH30N60C3D1	Bulk		8 Weeks	30	1 - 10 - 100 $12.74 1000 $12.74 10000 $12.74	Get Quote
Master Electronics	IXGH30N60C3D1					1 - 10 - 100 $7.32 1000 $5.50 10000 $5.46	Buy Now

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30N60C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
30n60b Abstract: 30N60 30N60C ic 931 Contextual Info: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	30n60b 30n60c o-268 o-247 +230n60 ic 931	PDF
Contextual Info: IXKH 30N60C5 CoolMOS 1 Power MOSFET ID25 = 30 A VDSS = 600 V RDS on) max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D ﬂ D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	30n60c5 o-247 20090209d	PDF
30n60c Contextual Info: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Preliminary Data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW	Original	30n60b 30n60c o-247 o-268	PDF
Contextual Info: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	30n60b 30n60c o-268	PDF
30N60B Abstract: 30N60C Contextual Info: High Speed IGBT VCES Short Circuit SOA Capability IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	30n60b 30n60c o-247 o-268	PDF
DSA003710 Contextual Info: IXKH 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS	Original	30n60c5 o-247 20070625a dsa003710	PDF
MOSFET IXYS TO-220 Contextual Info: IXKH 30N60C5 IXKP 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S D(TAB) TO-220 AB (IXKP)	Original	30n60c5 o-247 o-220 mosfet ixys to-220	PDF
Contextual Info: IXKH 30N60C5 COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	30n60c5 o-247 20080310b	PDF
UPS SIEMENS Abstract: 30N60C siemens servo motor siemens igbt Contextual Info: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGP 30N60C2 C2- Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads)	Original	30n60c2 ic110 o-220 ups siemens +330n60c siemens servo motor siemens igbt	PDF
Contextual Info: HiPerFASTTM IGBT with Diode C2-Class High Speed IGBTs Symbol Test Conditions IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM	Original	30n60c2d1 ic110 o-247 o-268	PDF
Contextual Info: IXKH 30N60C5 CoolMOS 1 Power MOSFET ID25 = 30 A VDSS = 600 V RDS on) max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	30n60c5 o-247 20080523c	PDF
30n60b Abstract: B2045 Contextual Info: □ IXYS v CES High Speed IGBT t, 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns IXSH/IXST 30N60B IXSH/IXST 30N60C ^CES Short Circuit SOA Capability Preliminary Data Sheet Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i	OCR Scan	30n60b 30n60c b2045	PDF
30N60C2 Abstract: 728B1 123B1 Contextual Info: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60C2 IXGT 30N60C2 C2-Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20	Original	30n60c2 ic110 o-268 o-247 +3065b1 728b1 123b1	PDF
30N60C2D1 Abstract: v922 Contextual Info: Advance Technical Data HiPerFASTTM IGBT with Diode C2-Class High Speed IGBTs Symbol Test Conditions IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	30n60c2d1 ic110 o-247 o-268 +4065b1 728b1 123b1 v922	PDF

IGBT GS Contextual Info: IXKH 30N60C5 CoolMOS 1 Power MOSFET ID25 = 30 A VDSS = 600 V RDS on) max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	30n60c5 o-247 20090209d igbt gs	PDF
Contextual Info: IXKH 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD D G G D S S D(TAB) Features MOSFET Conditions VDSS	Original	30n60c5 o-247	PDF
Contextual Info: HiPerFASTTM IGBT IXGP 30N60C2 C2- Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C limited by leads 70	Original	30n60c2 ic110 o-220	PDF
Contextual Info: IXKH 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS	Original	30n60c5 o-247 20070625a	PDF
30N60C Contextual Info: n ix Y S ADVANCED TECHNICAL INFORMATION VCES High Speed IGBT tn 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns IXSH/1XST 30N60B IXSH/1XST 30N60C ^CES Short Circuit SOA Capability • Symbol Test Conditions v CES T, =25°Cto150°C 600 V VC0R ^ 600 V v GES Continuous	OCR Scan	30n60b 30n60c cto150 o-247ad +1o-268	PDF
Contextual Info: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60C2 IXGT 30N60C2 C2-Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	30n60c2 ic110 o-268 o-247	PDF
ixkp30n60c5 Contextual Info: IXKH 30N60C5 IXKP 30N60C5 Advanced Technical Information ID25 = 30 A = 600 V VDSS RDS on max = 0.125 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP)	Original	30n60c5 o-247 o-220 application50 +1ixkp30n60c5	PDF
30N60C2 Contextual Info: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60C2 IXGT 30N60C2 C2-Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	30n60c2 ic110 o-268 o-247	PDF
30N60C2D1 Contextual Info: HiPerFASTTM IGBT with Diode C2-Class High Speed IGBTs Symbol Test Conditions IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM	Original	30n60c2d1 ic110 o-247 o-268	PDF
B1116 Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1 Contextual Info: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40	OCR Scan	o-220 o-263 o-247 o-2680xst +1316n60 24n60 30n60 40n60 25n100 b1116 b1104 n60a b1118 10n120 b1102 b1126 35n120u1	PDF

30N60C Search Results

30N60C Datasheets (2)

30N60C Price and Stock

onsemi HGTG30N60C3D

Infineon Technologies AG AIKW30N60CTXKSA1

Infineon Technologies AG SIPC30N60C3X1SA2

Littelfuse Inc IXXH30N60C3D1

Littelfuse Inc IXGH30N60C3D1

30N60C Datasheets Context Search

30n60b

30n60c

30N60B

DSA003710

MOSFET IXYS TO-220

UPS SIEMENS

30n60b

30N60C2

30N60C2D1

IGBT GS

30N60C

ixkp30n60c5

30N60C2

30N60C2D1

B1116