30N60B Search Results

30N60B Price and Stock

Filter by Manufacturer

Select Manufacturer


IXYS Corporation IXXH30N60B3D1 IGBTs XPT 600V IGBT GenX3 XPT IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXXH30N60B3D1		446			1 $8.44 10 $4.90 100 $4.90 1000 $3.95 10000 $3.95	Buy Now
TTI	IXXH30N60B3D1	Tube			300	1 - 10 - 100 - 1000 $4.03 10000 $4.03	Buy Now
IXYS Corporation IXXH30N60B3 IGBTs TO247 600V 30A XPT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXXH30N60B3		146			1 $7.61 10 $5.09 100 $5.09 1000 $3.30 10000 $3.26	Buy Now
TTI	IXXH30N60B3	Tube			300	1 - 10 - 100 - 1000 $2.64 10000 $2.64	Buy Now
Microchip Technology Inc APT30N60BC6 MOSFETs MOSFET Superjunction 600 V 30 A TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	APT30N60BC6					1 $5.64 10 $5.64 100 $5.64 1000 $5.64 10000 $5.64	Get Quote
IXYS Corporation IXXQ30N60B3M IGBTs TO3P 600V 19A IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXXQ30N60B3M					1 - 10 - 100 - 1000 $3.11 10000 $3.11	Get Quote
TTI	IXXQ30N60B3M	Tube			300	1 - 10 - 100 - 1000 $2.41 10000 $2.41	Buy Now
IXYS Corporation IXST30N60BD1 IGBTs 55 Amps 600V 2 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXST30N60BD1					1 - 10 - 100 - 1000 - 10000 -	Get Quote

30N60B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
30n60b Abstract: 30N60 30N60C ic 931 Contextual Info: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	30N60B 30N60C O-268 O-247 30n60b 30N60 30N60C ic 931	PDF
30n60 Abstract: 30N60B2 Contextual Info: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGP 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B2 IC110 O-220 30n60 30N60B2	PDF
30N60B2 Contextual Info: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60B2 IXGT 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B2 IC110 O-268 30N60B2	PDF
30n60c Contextual Info: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Preliminary Data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW	Original	30N60B 30N60C O-247 O-268	PDF
Contextual Info: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B2D1 IC110	PDF
Contextual Info: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	30N60B 30N60C O-268	PDF
1XYS Contextual Info: a ix Y S 1 Preliminary Data Sheet v CES IXGH 30N60B IXGH 30N60BS ^C25 vv CE sat HiPerFAST IGBT = 600 V = 60 A = 1.8 V = 130 ns tfi TO-247 SMD (30N60BS) Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RQE= 1 M il	OCR Scan	30N60B 30N60BS 13/10Nm/lb O-247 1XYS	PDF
30n60b Abstract: 30n60 TO-247AA 15a020 Contextual Info: HiPerFASTTM IGBT with Diode IXGH 30N60BU1 IXGT 30N60BU1 Combi Pack VCES IC25 VCE sat tfi = 600 V = 60 A = 1.8 V = 100 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	30N60BU1 O-268 IC110 O-247 728B1 30n60b 30n60 TO-247AA 15a020	PDF
Contextual Info: HiPerFASTTM IGBT with Diode IXGH 30N60BU1 VCES IXGT 30N60BU1 IC25 VCE sat tfi = 600 V = 60 A = 1.8 V = 100 ns TO-268 (IXGT) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous	Original	30N60BU1 O-268 IC110 30N60BU1	PDF
Contextual Info: I Z II X Y S HiPerFAST IGBT with Diode V.CES IXGH 30N60BD1 IXGT 30N60BD1 600 60 1.8 C25 CE sat V A V 100 ns tfi(typ) Preliminary data sheet Maximum Ratings Symbol TestC onditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i	OCR Scan	30N60BD1 O-268 O-247	PDF
30N60B2D1 Abstract: ixgh30n60b2d1 Contextual Info: Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions IXGH 30N60B2D1 VCES IXGT 30N60B2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B2D1 IC110 O-247 O-268 728B1 123B1 065B1 ixgh30n60b2d1	PDF
Contextual Info: HiPerFASTTM IGBT with Diode VCES = 600 V IC25 = 60 A VCE sat = 1.8 V tfi(typ) = 100 ns IXGH 30N60BD1 IXGT 30N60BD1 Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V	Original	30N60BD1 30N60BD1 O-247 O-268 O-268	PDF
30N60B Abstract: 30N60C Contextual Info: High Speed IGBT VCES Short Circuit SOA Capability IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B 30N60C O-247 O-268 30N60C	PDF
4013V Abstract: Siemens DIODE E 1220 30N60B2D1 Contextual Info: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B2D1 30N60B2D1 IC110 O-247 O-268 4013V Siemens DIODE E 1220	PDF

30N60 Contextual Info: OIXYS Prelim inary Data Sheet HiPerFAST IGBT with Diode 30N60BU1 30N60BU1S v CES ^C25 vCE sat tfi 600 V 60 A 1.8 V 130 ns Combi Pack TO-247 SMD (30N60BU1S) Symbol Test Conditions VCES ^ VCGR Maximum Ratings C (TAB) = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 MO	OCR Scan	IXGH30N60BU1 IXGH30N60BU1S O-247 30N60BU1S) IXGH3QN60BU1 IXGH30N6QBU1S 30N60	PDF
Contextual Info: Advance Technical Data HiPerFASTTM IGBT IXGH 30N60B2 IXGT 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600	Original	30N60B2 IC110 O-268 O-247	PDF
30N60BD Contextual Info: nixYS Advanced Technical Information HiPerFAST IGBT with Diode IXGH 30N60BD1 IXGT 30N60BD1 ^fi typ Symbol Test Conditions VCEs Tj = 25°Cto 150UC 600 V v CGB T,J = 25cC to 150°C ;R Cat =1 MU 600 V v G ES Continuous +20 V VG EM Transient ±30 V ^C25 Tc =25°C	OCR Scan	30N60BD1 30N60BD1 150UC O-268 O-247 15BSC~ 30N60BD	PDF
30n60 Contextual Info: HiPerFASTTM IGBT with Diode IXGH 30N60BD1 VCES IXGT 30N60BD1 I C25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	30N60BD1 O-247 O-268 O-268 30n60	PDF
Contextual Info: Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions IXGH 30N60B2D1 VCES IXGT 30N60B2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B2D1 IC110 O-247 728B1 123B1 728B1 065B1	PDF
30N60BD1 Abstract: TO-264 Jedec package outline Contextual Info: High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 Short Circuit SOA Capability Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 55 A	Original	30N60BD1 30N60BD1 TO-264 Jedec package outline	PDF
30N60B2D1 Abstract: IXGH30N60B2D1 30N60B2D 30n60b 30N60B2 DSEP 12A Contextual Info: Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions IXGH 30N60B2D1 VCES IXGT 30N60B2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B2D1 IC110 O-247 728B1 123B1 728B1 065B1 IXGH30N60B2D1 30N60B2D 30n60b 30N60B2 DSEP 12A	PDF
30N60BS Contextual Info: HiPerFAST IGBT VCES IXGH 30N60B IXGH 30N60BS ^C25 VCE sat = 600 V = 60 A = 1.8V = 130 ns P relim in ary data Symbol Test Conditions V CES T j = 25°C to 150°C Maximum Ratings 600 V vCGR T j = 25°C to 150“C; RGE = 1 MD 600 V v GES vGEM Continuous ±20	OCR Scan	30N60B 30N60BS O-247 30N60BS) 30N60BS	PDF
30n60 Contextual Info: High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	30N60BD1 30N60BD1 O-247AD O-268 O-264 30n60	PDF
30N60BD1 Abstract: ICP-F50 Contextual Info: HiPerFASTTM IGBT with Diode IXGH 30N60BD1 VCES IXGT 30N60BD1 I C25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	30N60BD1 O-268 O-247 ICP-F50	PDF

30N60B Search Results

30N60B Price and Stock

IXYS Corporation IXXH30N60B3D1

IXYS Corporation IXXH30N60B3

Microchip Technology Inc APT30N60BC6

IXYS Corporation IXXQ30N60B3M

IXYS Corporation IXST30N60BD1

30N60B Datasheets Context Search

30n60b

30n60

30N60B2

30n60c

1XYS

30n60b

30N60B2D1

30N60B

4013V

30N60

30N60BD

30n60

30N60BD1

30N60B2D1

30N60BS

30n60

30N60BD1