40N60 Search Results

TO247AD

Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247
Contextual Info: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions

IXGR40N60

Abstract: 40n60 40N60c 40N60CD1 IXGR40N60CD1
Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.5 V = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

40n60

Abstract: 40N60B2D1 40N60B2
Contextual Info: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching

Contextual Info: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features

40N60BD1

Abstract: 40N60B 40N60 IXGR40N60BD1 IXGR40N60
Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60B IXGR 40N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.1 V = 180 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

40n60c2d1

Abstract: *40n60c2d1 IXGH40N60C2D1 transistor kf 508 40N60 diode fr 307 40N60C2D
Contextual Info: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IC25 IXGH 40N60C2D1 IXGT 40N60C2D1 IXGJ 40N60C2D1 = 600 V = 75 A = 2.5 V = 32 ns VCE SAT tfi(typ) C2-Class High Speed IGBTs TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

TO-264

Abstract: 40N60BD1 PLUS247
Contextual Info: IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode TM PLUS247 package Short Circuit SOA Capability VCES IC25 VCE sat tfi(typ) = 600 = 75 = 2.2 = 120 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

40N60BD1

Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 40N60BD1 VCES IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.2 V = 120 ns Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600

43N60

Abstract: 40n60 IXFN40N60 IXFK40N60 IXFK43N60 IXFN43N60
Contextual Info: ADVANCE INFORMATION HiPerFETTM Power MOSFET IXFN 43N60 IXFN 40N60 IXFK 43N60 IXFK 40N60 Single MOSFET Die VDSS I D25 RDS on trr 600V 600V 600V 600V 43A 40A 43A 40A 0.13W 0.15W 0.13W 0.15W 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings

Contextual Info: CoolMOSTM Power MOSFET IXKC 40N60C in ISOPLUS220TM Package Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 600 V ID25 = 24 A Ω RDS(on) = 96 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings

IXGR40N60C2D1

Abstract: 40N60C2 40N60c2d1 ixgr 40N60c2d1
Contextual Info: Advance Technical Data IXGR 40N60C2 IXGR 40N60C2D1 HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 = 600 V = 60 A = 2.7 V = 32 ns VCE SAT tfi(typ) Lightspeed 2TM Series (Electrically Isolated Back Surface) PLUS 247TM (IXFX) IXGR_C2 IXGR_C2D1 Symbol Test Conditions

Contextual Info: Advanced Technical Information CoolMOS Power MOSFET IXKN 40N60C VDSS ID25 RDS on 600 V 40 A Ω 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 600 V ±20 V miniBLOC, SOT-227 B

Contextual Info: HiPerFASTTM IGBT IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching VCES IC25 VCE sat tfi typ = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

30n60

Abstract: G 40N60 igbt Insulated Gate Bipolar Transistors igbt 30N60 40n60 igbt 40n60 25N100 45N10
Contextual Info: Insulated Gate Bipolar Transistors IGBT Insulated Gate Bipolar Transistors (IGBT) "S" series with improved SCSOA capability T ft* w ^0 *c Te . w c max. • ■ ■ ■ I »M m P ggM S i Billi IXSH IXSH IXSH IXSH IXSH IXSH 20N60 30N60 40N60 25N100 45N100

Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60C2 IXGR 40N60C2D1 C2-Class High Speed IGBTs Electrically Isolated Back Surface Preliminary Data Sheet IXGR_C2 IXGR_C2D1 VCES IC25 = = VCE(SAT) = tfi(typ = ISOPLUS 247TM (IXGR) Symbol Test Conditions VCES TJ = 25°C to 150°C

Contextual Info: IXGX 40N60BD1 VCES IC25 VCE sat tfi(typ) HiPerFAST TM IGBT with Diode = 600 V = 75 A = 2.1 V = 180 ns Preliminary Data Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20

Contextual Info: IXKF 40N60SCD1 CoolMOS 1 Power MOSFET VDSS ID25 RDS on) typ. trr with Series Schottky Diode and Ultra Fast Antiparallel Diode = 600 V = 41 A = 60 m = 70 ns in High Voltage ISOPLUS i4-PAC™ ISOPLUS i4-PAC™ 5 DS DF Preliminary data 1 1 2 T 5 E72873 2

Contextual Info: Advance Technical Data HiPerFASTTM IGBT IXGH 40N60B2 IXGT 40N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600

Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 40N60BD1 VCES IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.2 V = 120 ns Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600

Contextual Info: = IXSH 40N60B VCES = IXST 40N60B IC25 VCE sat = High Speed IGBT Short Circuit SOA Capability tfi typ 600V 75A 2.2V = 100 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V

Contextual Info: □IXYS Advanced Technical Information IXSH IXST High Speed IGBT 40N60B 40N60B Short Circuit SOA Capability VCES = 600 V IC25 = 75 A V CE sat = 2.2 V t Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V v GES

Contextual Info: Advanced Technical Information CoolMOS Power MOSFET IXKN 40N60C VDSS ID25 RDS on 600 V 40 A Ω 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings S

40N60C2D1

Abstract: KF 520
Contextual Info: HiPerFASTTM IGBT with Diode VCES IC25 = = VCE SAT = tfi(typ = IXGH 40N60C2D1 IXGT 40N60C2D1 IXGJ 40N60C2D1 C2-Class High Speed IGBTs 600 V 56 A 2.7 V 32 ns TO-247(IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

40N60

Abstract: 43N60 g 40n60
Contextual Info: HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single M O S FE T Die 43N60 40N60 43N60 40N60 v DSS ^D25 600V 600V 600V 600V 43A 40A 43A 40A D DS on 0.130 0.150 0.130 0.150 200ns 200ns 200ns 200ns TO-264 AA (IXFK) ?D Symbol Test Conditions Maximum Ratings IXFK