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IXYS Corporation IXKR40N60C MOSFETs 40 Amps 600V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXKR40N60C					1 $34.74 10 $25.40 100 $25.40 1000 $23.90 10000 $23.90	Get Quote
TTI	IXKR40N60C	Tube			300	1 - 10 - 100 - 1000 $24.05 10000 $24.05	Buy Now
TME	IXKR40N60C				1	1 $25.77 10 $19.87 100 $18.94 1000 $18.94 10000 $18.94	Get Quote
IXYS Corporation IXKN40N60C MOSFET Modules 40 Amps 600V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXKN40N60C					1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	IXKN40N60C				1	1 $38.04 10 $28.88 100 $28.48 1000 $28.48 10000 $28.48	Get Quote
Littelfuse Inc IXKR40N60C DiscMSFT NChSuprJuncC3-Class ISO247/+247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	IXKR40N60C	Bulk		8 Weeks	30	1 - 10 - 100 $34.21 1000 $34.21 10000 $34.21	Get Quote
Harris Semiconductor HGTG40N60C3 N-Channel IGBT 75A, 600V, UFS SERIES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HGTG40N60C3		40		1	1 - 10 - 100 $5.23 1000 $4.68 10000 $4.41	Buy Now
Harris Semiconductor HGTG40N60C3R Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HGTG40N60C3R		45		1	1 - 10 - 100 $7.23 1000 $6.47 10000 $6.09	Buy Now
Vyrian	HGTG40N60C3R		683			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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40N60C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TO247AD Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247 Contextual Info: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions	Original	40N60C ISOPLUS247TM 247TM E153432 TO247AD TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247	PDF
IXGR40N60 Abstract: 40n60 40N60c 40N60CD1 IXGR40N60CD1 Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.5 V = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	ISOPLUS247TM 40N60C 40N60CD1 IC110 E153432 728B1 IXGR40N60 40n60 40N60c IXGR40N60CD1	PDF
Contextual Info: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features	Original	40N60C ISOPLUS220TM E72873 20080523a	PDF
40n60c Abstract: mosfet 4800 E72873 Contextual Info: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873	Original	40N60C ISOPLUS220TM E72873 20080523a 40n60c mosfet 4800 E72873	PDF
IXGR40N60C2D1 Abstract: 40n60c2 ixgr 40n60c2d1 40n60c2d1 40n60c ixgr40n60c2 40n60 074K Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60C2 IXGR 40N60C2D1 = = VCE SAT = tfi(typ = VCES IC25 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_C2 IXGR_C2D1 ISOPLUS 247TM (IXGR) Symbol Test Conditions VCES TJ = 25°C to 150°C	Original	ISOPLUS247TM 40N60C2 40N60C2D1 247TM IC110 ID110 40N60C2D1) IXGR40N60C2D1 40n60c2 ixgr 40n60c2d1 40n60c2d1 40n60c ixgr40n60c2 40n60 074K	PDF
40n60c2 Contextual Info: HiPerFASTTM IGBT C2-Class High Speed IGBTs VCES IC25 VCE sat tfi typ IXGH 40N60C2 IXGT 40N60C2 = 600 V = 75 A = 2.7 V = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V	Original	40N60C2 O-268 IC110 O-247 40n60c2	PDF
Contextual Info: IXSR 40N60CD1 IGBT with Diode ISOPLUS247TM VCES IC25 = 600 = 62 = 2.5 = 70 VCE SAT tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR	Original	ISOPLUS247TM 40N60CD1	PDF
Contextual Info: HiPerFASTTM IGBT C2-Class High Speed IGBTs IXGH 40N60C2 IXGT 40N60C2 VCES IC25 VCE sat tfi typ = 600 V = 75 A = 2.7 V = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V	Original	40N60C2 O-268 IC110 O-247	PDF
40N60C Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 40N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage, MOSFET Symbol Test Conditions Maximum Ratings VDSS = 600 V ID25 = 28 A Ω RDS(on) = 96 mΩ	Original	ISOPLUS220TM 40N60C 728B1 065B1 123B1 40N60C	PDF
40n60c2d1 Abstract: *40n60c2d1 IXGH40N60C2D1 transistor kf 508 40N60 diode fr 307 40N60C2D Contextual Info: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IC25 IXGH 40N60C2D1 IXGT 40N60C2D1 IXGJ 40N60C2D1 = 600 V = 75 A = 2.5 V = 32 ns VCE SAT tfi(typ) C2-Class High Speed IGBTs TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	40N60C2D1 O-247 IC110 40n60c2d1 *40n60c2d1 IXGH40N60C2D1 transistor kf 508 40N60 diode fr 307 40N60C2D	PDF
Contextual Info: CoolMOSTM Power MOSFET IXKC 40N60C in ISOPLUS220TM Package Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 600 V ID25 = 24 A Ω RDS(on) = 96 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings	Original	40N60C ISOPLUS220TM E153432 405B2	PDF
IXGR40N60C2D1 Abstract: 40N60C2 40N60c2d1 ixgr 40N60c2d1 Contextual Info: Advance Technical Data IXGR 40N60C2 IXGR 40N60C2D1 HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 = 600 V = 60 A = 2.7 V = 32 ns VCE SAT tfi(typ) Lightspeed 2TM Series (Electrically Isolated Back Surface) PLUS 247TM (IXFX) IXGR_C2 IXGR_C2D1 Symbol Test Conditions	Original	40N60C2 40N60C2D1 ISOPLUS247TM 247TM 728B1 123B1 728B1 065B1 IXGR40N60C2D1 40N60C2 40N60c2d1 ixgr 40N60c2d1	PDF
Contextual Info: Advanced Technical Information CoolMOS Power MOSFET IXKN 40N60C VDSS ID25 RDS on 600 V 40 A Ω 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 600 V ±20 V miniBLOC, SOT-227 B	Original	40N60C OT-227 E72873	PDF
fast diode SOT-227 Abstract: 40N60C E72873 MOSFET 031 Contextual Info: Advanced Technical Information CoolMOS Power MOSFET IXKN 40N60C VDSS ID25 RDS on 600 V 40 A 70 mW N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 600 V ±20 V miniBLOC, SOT-227 B E72873	Original	40N60C OT-227 E72873 Mounti193 fast diode SOT-227 40N60C E72873 MOSFET 031	PDF

40N60C Abstract: CoolMOS E72873 Ixkn 40n60 E72873 SOT-227 Contextual Info: IXKN 40N60C CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 40 A Ω 70 mΩ D G S S miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C	Original	40N60C OT-227 E72873 40N60C CoolMOS E72873 Ixkn 40n60 E72873 SOT-227	PDF
40N60CD1 Abstract: PLUS247 IXSR40N60CD1 RG70 40N60C Contextual Info: IXSR 40N60CD1 IGBT with Diode ISOPLUS247TM VCES IC25 = 600 = 62 = 2.5 = 70 VCE SAT tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR	Original	40N60CD1 ISOPLUS247TM 40N60CD1 PLUS247 IXSR40N60CD1 RG70 40N60C	PDF
Contextual Info: □ IX Y S Advanced Technical Information IXSK 40N60CD1 IXSX 40N60CD1 IGBT with Diode PLUS247 package ^fi typ V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C, limited by leads	OCR Scan	40N60CD1 PLUS247â	PDF
Contextual Info: IXKC 40N60C COOLMOS * Power MOSFET VDSS = 600 V ID25 = 28 A RDS on max = 95 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features	Original	40N60C ISOPLUS220TM E72873	PDF
40N60C Contextual Info: Advanced Technical Information CoolMOS Power MOSFET IXKN 40N60C VDSS ID25 RDS on 600 V 40 A 70 mW N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 600 V ±20 V miniBLOC, SOT-227 B E72873	Original	40N60C OT-227 E72873 40N60C	PDF
Contextual Info: IXKR 40N60C COOLMOS * Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base D VDSS ID25 RDS on 600 V 38 A 70 mΩ Ω ISOPLUS 247TM E153432 G G D Preliminary data S S G = Gate Conditions	Original	40N60C ISOPLUS247TM 247TM E153432 ISOPLUS247 O-247	PDF
Contextual Info: IXKN 40N60C COOLMOS * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 40 A Ω 70 mΩ D G S S miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C	Original	40N60C OT-227 E72873	PDF
Contextual Info: IXKC 40N60C CoolMOS Power MOSFET VDSS = 600 V ID25 = 28 A RDS on max = 95 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features	Original	40N60C ISOPLUS220TM E72873	PDF
20n60c Abstract: 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c Contextual Info: Product Change Notice PCN No.: 05-03 Customer: All IXYS product type: CoolMOS products in 600V: IXKC 20N60C, IXKC 40N60C IXKR 40N60C IXKF 40N60SCD1 IXKN 40N60C, IXKN 75N60C Description of change: CoolMOS die type C2 will be replaced by C3 Reason for change:	Original	20N60C, 40N60C 40N60SCD1 40N60C, 75N60C 14F12 20n60c 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c	PDF
75n60 Abstract: 40n60 40n60 transistor IXKR 40N60C E72873 ISOPLUS247 lID25 Ixkn ixkr 40n60c Contextual Info: CoolMOS Power MOSFET Contents VDSS max V ID25 TC = 25 °C A RDS on 600 40 70 40 70 75 35 ISOPLUS247TM miniBLOC Page mΩ Ω IXKN 40N60C C5-2 IXKR 40N60 IXKN 75N60 C5-4 C5-6 CoolMOS is a trademark ofInfineon Technologies AG. 2000 IXYS All rights reserved	Original	ISOPLUS247TM 40N60C 40N60 75N60 OT-227 E72873 75n60 40n60 40n60 transistor IXKR 40N60C E72873 ISOPLUS247 lID25 Ixkn ixkr 40n60c	PDF

40N60C Search Results

40N60C Price and Stock

IXYS Corporation IXKR40N60C

IXYS Corporation IXKN40N60C

Littelfuse Inc IXKR40N60C

Harris Semiconductor HGTG40N60C3

Harris Semiconductor HGTG40N60C3R

40N60C Datasheets Context Search

TO247AD

IXGR40N60

40n60c

IXGR40N60C2D1

40n60c2

40N60C

40n60c2d1

IXGR40N60C2D1

fast diode SOT-227

40N60C

40N60CD1

40N60C

20n60c

75n60