IXKR Search Results

TO247AD

Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247
Contextual Info: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions

Contextual Info: IXKR 47N60C5 Advanced Technical Information COOLMOS * Power MOSFET VDSS = 600 V ID25 = 47 A RDS on max = 45 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS247TM

47n60

Abstract: 47N60C 47N60C5 IXKR E72873 v1207v ixkr47n60c5
Contextual Info: IXKR 47N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 45 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge

Contextual Info: IXKR 40N60C COOLMOS * Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base D VDSS ID25 RDS on 600 V 38 A 70 mΩ Ω ISOPLUS 247TM E153432 G G D Preliminary data S S G = Gate Conditions

IXKR25N80C

Contextual Info: IXKR 25N80C Advanced Technical Information COOLMOS * Power MOSFET ID25 = 25 A VDSS = 800 V RDS on = 125 mW in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247TM D * G E153432

20n60c

Abstract: 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c
Contextual Info: Product Change Notice PCN No.: 05-03 Customer: All IXYS product type: CoolMOS products in 600V: IXKC 20N60C, IXKC 40N60C IXKR 40N60C IXKF 40N60SCD1 IXKN 40N60C, IXKN 75N60C Description of change: CoolMOS die type C2 will be replaced by C3 Reason for change:

75n60

Abstract: 40n60 40n60 transistor IXKR 40N60C E72873 ISOPLUS247 lID25 Ixkn ixkr 40n60c
Contextual Info: CoolMOS Power MOSFET Contents VDSS max V ID25 TC = 25 °C A RDS on 600 40 70 40 70 75 35 ISOPLUS247TM miniBLOC Page mΩ Ω IXKN 40N60C C5-2 IXKR 40N60 IXKN 75N60 C5-4 C5-6 CoolMOS is a trademark ofInfineon Technologies AG. 2000 IXYS All rights reserved

CoolMOS Power Transistor

Abstract: ISOPLUS247 IXKR25N80C
Contextual Info: Advanced Technical Information VDSS CoolMOS Power MOSFET in ISOPLUS247TM Package RDS on 25 A 125 mΩ Ω 800 V IXKR 25N80C N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ID25 D G *) S ISOPLUS 247TM E153432

40N60C

Abstract: ISOPLUS247
Contextual Info: Advanced Technical Information CoolMOS Power MOSFET in ISOPLUS247TM Package IXKR 40N60C VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247TM E153432 MOSFET Symbol

Contextual Info: Advanced Technical Information CoolMOS Power MOSFET in ISOPLUS247TM Package IXKR 40N60 VDSS ID25 RDS on 600 V 40 A Ω 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base Symbol Conditions VDSS TJ = 25°C to 150°C

40N60C

Abstract: ISOPLUS247 ISOPLUS247TM ixkr 40n60c IXKR40N60C
Contextual Info: IXKR 40N60C CoolMOS 1 Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base D VDSS ID25 RDS on) 600 V 38 A 70 mΩ Ω ISOPLUS 247TM E153432 G G D Preliminary data S S G = Gate

25N80C

Abstract: "VDSS 800V" mosfet ISOPLUS247 25n80
Contextual Info: IXKR 25N80C Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 25 A VDSS = 800 V RDS on) = 125 mW in ISOPLUS247™ Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247™ D G E153432

Contextual Info: IXKR 47N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 45 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS247TM

Contextual Info: IXKR 25N80C Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 25 A VDSS = 800 V RDS on) = 125 mW in ISOPLUS247™ Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247™ D G G E53432

100N055

Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D
Contextual Info: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

IXGP70N33

Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim