20N60C Search Results
20N60C Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 20N60C3DR | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
| 20N60C3R | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
| 20N60C3R | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 |
20N60C Price and Stock
Infineon Technologies AG SPA20N60C3XKSA1- Rail/Tube (Alt: SPA20N60C3XKSA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SPA20N60C3XKSA1 | Tube | 26,116 | 17 Weeks | 1 |
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SPA20N60C3XKSA1 | Bulk | 226 | 1 |
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SPA20N60C3XKSA1 | Bulk | 3 | 3 Weeks | 1 |
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SPA20N60C3XKSA1 | 50 |
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SPA20N60C3XKSA1 | 8 |
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SPA20N60C3XKSA1 | Tube | 650 | 500 |
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SPA20N60C3XKSA1 | 1,500 | 18 Weeks | 500 |
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SPA20N60C3XKSA1 | 5,829 |
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SPA20N60C3XKSA1 | 27,180 |
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Infineon Technologies AG SPP20N60C3XKSA1- Bulk (Alt: 95W8643) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SPP20N60C3XKSA1 | Bulk | 1 |
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| SPP20N60C3XKSA1 | Tube | 24 Weeks | 50 |
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SPP20N60C3XKSA1 | 793 |
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SPP20N60C3XKSA1 | Bulk | 2,798 | 1 |
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| SPP20N60C3XKSA1 | Bulk | 50 |
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SPP20N60C3XKSA1 | 77,288 | 1 |
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SPP20N60C3XKSA1 | 50 |
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SPP20N60C3XKSA1 | Tube | 2,200 | 50 |
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SPP20N60C3XKSA1 | 1,450 |
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SPP20N60C3XKSA1 | 256,000 | 23 Weeks | 500 |
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SPP20N60C3XKSA1 | 40,000 |
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Infineon Technologies AG SPA20N60CFDXKSA1- Rail/Tube (Alt: SPA20N60CFDXKSA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SPA20N60CFDXKSA1 | Tube | 19 Weeks | 500 |
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SPA20N60CFDXKSA1 | Bulk | 367 | 1 |
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SPA20N60CFDXKSA1 | 113 | 1 |
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SPA20N60CFDXKSA1 | 500 |
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SPA20N60CFDXKSA1 | 30 Weeks | 500 |
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SPA20N60CFDXKSA1 | 9,546 |
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Infineon Technologies AG AIKW20N60CTXKSA1- Rail/Tube (Alt: AIKW20N60CTXKSA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AIKW20N60CTXKSA1 | Tube | 52 Weeks | 240 |
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AIKW20N60CTXKSA1 | 126 |
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AIKW20N60CTXKSA1 | Bulk | 1 |
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AIKW20N60CTXKSA1 | 10,540 | 1 |
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AIKW20N60CTXKSA1 | 1 |
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AIKW20N60CTXKSA1 | 40 Weeks | 240 |
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AIKW20N60CTXKSA1 | 10,132 |
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Infineon Technologies AG SPP20N60C3HKSA1Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: SPP20N60C3HKSA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SPP20N60C3HKSA1 | Tube | 25 Weeks, 4 Days | 500 |
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SPP20N60C3HKSA1 | 71 Weeks | 500 |
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SPP20N60C3HKSA1 | 11,546 |
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20N60C Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions |
Original |
20n60c5mo-220 | |
20n60c5
Abstract: DSA003709
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Original |
20n60c5o-247o-22020070625a+1 | |
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Contextual Info: Advanced Technical Information IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions |
Original |
20n60c5mo-220 | |
20n60cContextual Info: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600 |
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isoplus220tm20n60c220lvtmo-220lv+3 | |
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Contextual Info: IXKH 20N60C5 IXKP 20N60C5 CoolMOS 1 Power MOSFET ID25 = 20 A VDSS = 600 V RDS on) max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D fl D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET |
Original |
20n60c5o-247o-22020080523d | |
20N60CContextual Info: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 |
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20n60cisoplus220tme7287320080523a | |
20N60C
Abstract: UPS 380v
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Original |
isoplus220tm20n60c220lvtm728b1+3 | |
UPS 380v
Abstract: 20n60c power switching
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Original |
20n60cisoplus220tm220lvtme153432+5 | |
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Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Symbol |
Original |
20n60c5mo-22020070704a | |
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Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions |
Original |
20n60c5mo-220 | |
20n60c5
Abstract: IXKH20N60C5 20n60c IXKP20N60C5 20n60c* equivalent 20n60 K 739 mosfet MOSFET "symbol 7V" MOSFET N
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20n60c5o-247o-22020080523d+8 | |
20n60c
Abstract: UPS 380v IXKC 20n60c
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isoplus220tm20n60c220tmisoplus220+2 | |
20n60c5
Abstract: 20n60c5m
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20n60c5mo-22020090209d20n60c5 | |
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Contextual Info: IXKP 20N60C5M CoolMOS 1 Power MOSFET ID25 = 7.6 A VDSS = 600 V RDS on) max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions |
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20n60c5mo-22020090209d | |
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Contextual Info: IXKH 20N60C5 IXKP 20N60C5 COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET Symbol |
Original |
20n60c5o-247o-22020080310c | |
20n60c5Contextual Info: IXKP 20N60C5M CoolMOS 1 Power MOSFET ID25 = 7.6 A VDSS = 600 V RDS on) max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions |
Original |
20n60c5mo-22020080523c20n60c5 | |
20n60c
Abstract: 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c
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20n60c40n60c40n60scd175n60c+8 | |
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Contextual Info: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP) |
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20n60c5o-247o-22020070625a | |
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Contextual Info: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information ID25 = 20 A = 600 V VDSS RDS on max = 0.2 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP) G |
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20n60c5o-247o-220appli300 | |
20n60cContextual Info: IXKC 20N60C CoolMOS Power MOSFET VDSS = 600 V ID25 = 15 A RDS on max = 190 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features |
Original |
20n60cisoplus220tme72873 | |
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Contextual Info: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S D(TAB) TO-220 AB (IXKP) |
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20n60c5o-247o-220 | |
20n60c
Abstract: IXKC 20n60c E72873 A8711
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Original |
20n60cisoplus220tme7287320080523a+2 | |
20n60c3
Abstract: 20N60C3 equivalent sp*20n60c3 20n60c Q67040-S4397 diode smd marking code 621 20n60 SPB20N60C3 S4410 spp20n60
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spp20n60c3spb20n60c3spa20n60c3p-to220-3-31+12 | |
20n60c3DR
Abstract: 20n60c3 HGTG20N60C3DR 20n60c* equivalent INTEPOWER HGTG LD26 RURP1560 20N60C3D
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hgtg20n60c3dr150oc330ns1-800-4-harris+8 | |