20n60c3
Abstract: 20N60C3 equivalent sp*20n60c3 20n60c Q67040-S4397 diode smd marking code 621 20n60 SPB20N60C3 S4410 spp20n60
Contextual Info: Preliminary data 20N60C3, 20N60C3 20N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Worldwide best RDS on in TO 220 RDS(on) 0.19 Ω ID 20.7 A • Ultra low gate charge
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spp20n60c3spb20n60c3spa20n60c3p-to220-3-31+12p-to263-3-2p-to220-3-1q67040-s439820n60c320n60c3 equivalentsp*20n60c320n60cq67040-s4397diode smd marking code 62120n60s4410spp20n60
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20n60c3DR
Abstract: 20n60c3 HGTG20N60C3DR 20n60c* equivalent INTEPOWER HGTG LD26 RURP1560 20N60C3D
Contextual Info: 20N60C3DR S E M I C O N D U C T O R 40A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode November 1996 Features Description • 40A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as
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hgtg20n60c3dr150oc330ns1-800-4-harris+820n60c3dr20n60c320n60c* equivalentintepowerhgtgld26rurp156020n60c3d
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20N60C3
Abstract: Q67040-S4397 transistor 20N60c3 Q67040-S4398 sp*20n60c3 smd 20n60c3 SPB20N60C3 diode smd marking code 621 20n60c3 transistor 20N60
Contextual Info: Final data 20N60C3, 20N60C3 20N60C3, 20N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-31
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spp20n60c3spb20n60c3spi20n60c3spa20n60c3+14p-to220-3-31p-to262-3-1p-to263-3-2p-to220-3-1p-to-220-3-3120n60c3q67040-s4397transistor 20n60c3q67040-s4398sp*20n60c3smd 20n60c3diode smd marking code 62120n60c3 transistor20n60
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20N60C3R
Contextual Info: HARRIS 20N60C3R, 20N60C3R, 20N60C3R, 20N60C3RS S E M I C O N D U C T O R 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V T j = 25°C This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as
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hgtg20n60c3rhgtp20n60c3rhgt1s20n60c3rhgt1s20n60c3rs+120n60c3r
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20N60C3DR
Contextual Info: X 20N60C3DR M Aß , 40A, 600V, Rugged, UFS Series N-C hannel IGBT w ith A nti-Parallel U ltrafast Diode November 1996 Features Description • 40A, 600V at T c = 25°C This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as
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20n60c3
Abstract: 20N60C3 equivalent SPW20N60C3 sp*20n60c3 SDP06S60 transistor 20N60c3 506V
Contextual Info: 20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.19 Ω
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spw20n60c3p-to247q67040-s440620n60c3+520n60c3 equivalentsp*20n60c3sdp06s60transistor 20n60c3506v
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20N60C3 equivalent
Abstract: 20n60c3 circuit MOSFET 20N60c3
Contextual Info: CM6901 SLS SRC/LLC+SR Controller with 1 FM+2 PWMs GENERAL DESCRIPTION FEATURES CM6901 is a SLS, SRC/LLC + SR resonant controller 90+ Controller Smaller and Thinner Transformer 20ms with reasonable Bulk Cap(hold up time) SLS, SRC/LLC + SR resonant controller
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cm690120n60c3 equivalent20n60c3 circuitmosfet 20n60c3 |
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20n60c3
Abstract: 20N60C3R HGT1S20N60C3RS HGTP20N60C3R HGT1S20N60C3RS9A HGTG20N60C3R RURP1560 HGT1S20N60C3R
Contextual Info: 20N60C3R, 20N60C3R, 20N60C3R, 20N60C3RS S E M I C O N D U C T O R 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as
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hgtg20n60c3rhgtp20n60c3rhgt1s20n60c3rhgt1s20n60c3rs+7150oc330ns1-800-4-harris20n60c320n60c3rhgt1s20n60c3rs9arurp1560
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835NL-1A-B-C
Abstract: CM6502 CM6502T 20N60C3 CM6502THH CM6901 Power Transformer EE-19 EE-19 transformer 20n60c3 circuit 835NL-1A-B-C 12v
Contextual Info: CM6901 SLS SRC/LLC+SR Controller with 1 FM+2 PWMs GENERAL DESCRIPTION FEATURES CM6901 is a SLS, SRC/LLC + SR resonant controller 90+ Controller and it can operate at both SRC and LLC region with Smaller and Thinner Transformer synchronous rectification to achieve high efficiency. Its
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cm6901835nl-1a-b-ccm6502cm6502t+620n60c3cm6502thhpower transformer ee-19ee-19 transformer20n60c3 circuit835nl-1a-b-c 12v
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pq3230
Abstract: 20n60c3 CM6901XISTR
Contextual Info: CM6901 SLS SRC/LLC+SR Controller with 1 FM+2 PWMs GENERAL DESCRIPTION FEATURES CM6901 is a SLS, SRC/LLC + SR resonant controller 90+ Controller Smaller and Thinner Transformer 20ms with reasonable Bulk Cap(hold up time) SLS, SRC/LLC + SR resonant controller
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20N60C3
Abstract: 20N60C3 equivalent SPD06S60 sp*20n60c3 smd 20n60c3 SPB20N60C3 Q67040-S4550 S4550 spp20n60c3 SPI20N60C3
Contextual Info: 20N60C3, 20N60C3 20N60C3, 20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge P-TO220-3-31
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spp20n60c3spb20n60c3spi20n60c3spa20n60c3+12p-to220-3-31p-to262-3-1p-to263-3-2p-to220-3-1p-to-220-3-3120n60c320n60c3 equivalentspd06s60sp*20n60c3smd 20n60c3q67040-s4550s4550
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20ng0c3
Abstract: 20NG0 20n60c 20n60c3 20N60C3R 20n60c* equivalent TG20N60C3R 20N 443 20NG0C3R
Contextual Info: HARRIS S E M I C O N D U C T O R H G T G 2 0 N 6 0 C 3 R , H G T P 2 0 N 6 0 C 3 R , H G T 1 S 2 0 N 6 0 C 3 R , H G T 1 S 2 0 N 6 0 C 3 R S 40A, 600V, Ru gg ed UFS Series N-Chan nel IG BTs January 1997 F ea tu res Description • 40A, 600V T j = 2 5°C This family of IGBTs was designed for optimum performance
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1-800-4-h20ng0c320ng020n60c+620n60c320n60c3r20n60c* equivalenttg20n60c3r20n 44320ng0c3r
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20N60C3
Abstract: 20N60C3 equivalent SPA20N60C3 s4410 AN-TO220-3-31-01 GPT09301 SDP06S60 transistor 20N60c3
Contextual Info: 20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.19 Ω
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spa20n60c3p-to220-3-31q67040-s441020n60c3+620n60c3 equivalents4410an-to220-3-31-01gpt09301sdp06s60transistor 20n60c3
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20N60C3
Abstract: Q67040-S4550 20n60c3 TO-247 20n60c3 transistor SPD06S60 20N60C3 MARKING SPI20N60C3
Contextual Info: 20N60C3, 20N60C3 20N60C3, 20N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge P-TO220-3-31 P-TO262-3-1
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CM6901
Contextual Info: CM6901 SLS SRC/LLC+SR Controller with 1 FM+2 PWMs GENERAL DESCRIPTION FEATURES CM6901 is a SLS, SRC/LLC + SR resonant controller 90+ Controller Smaller and Thinner Transformer 20ms with reasonable Bulk Cap(hold up time) SLS, SRC/LLC + SR resonant controller
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20N60C3
Abstract: SPD06S60 SPW20N60C3 sp*20n60c3 transistor 20N60c3
Contextual Info: 20N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability
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20n60c3
Abstract: 20N60C3 equivalent spp20n60c3 TRANSISTOR SMD MARKING CODE SPB20N60C3 spp20n60 TRANSISTOR SMD MARKING CODE 7A SDP06S60 Q67040-S4397 smd 20n60c3
Contextual Info: 20N60C3 20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)
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spp20n60c3spb20n60c3p-to263-3-2p-to220-3-1+9q67040-s439820n60c320n60c3 equivalenttransistor smd marking codespp20n60transistor smd marking code 7asdp06s60q67040-s4397smd 20n60c3
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SPW20N60C3
Abstract: transistor 20N60c3
Contextual Info: 20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability
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spw20n60c3p-to247q67040-s440620n60c3+1transistor 20n60c3
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20n60c3
Abstract: spp20n60c3 SPB20N60C3
Contextual Info: Preliminary data 20N60C3, 20N60C3 20N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Worldwide best RDS on in TO 220 RDS(on) 0.19 Ω ID 20.7 A • Ultra low gate charge
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diode marking G36
Abstract: SPW20N60C3 20N60C3 SPW20N60C3 20n60c3
Contextual Info: 20N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated ID 20.7 A • High peak current capability
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20N60C3
Abstract: Q67040-S4550
Contextual Info: 20N60C3, 20N60C3 20N60C3, 20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-31
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20N60 equivalent
Abstract: 20n60c* equivalent 20n60 c equivalent 20n60 intersil 20n60c3 20N60C3R hg*20n60
Contextual Info: [ /Title HGT G20N6 0C3R, HGTP 20N60 C3R, HGT1 S20N6 0C3RS /Subject (40A, 600V, Rugged UFS Series NChannel IGBTs ) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche 20N60C3R, 20N60C3R, 20N60C3RS T UCT ROD RODUC P E P T E
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hgtg20n60c3rhgtp20n60c3rhgt1s20n60c3rsg20n6+920n60s20n620n60 equivalent20n60c* equivalent20n60 c equivalent20n60 intersil20n60c320n60c3rhg*20n60
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20n60c3
Abstract: 20N60C3 equivalent SPD06S60 diode marking G36 SPW20N60C3 SPW20N60
Contextual Info: 20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability
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CM6502
Contextual Info: CM6901 SLS SRC/LLC+SR Controller with 1 FM+2 PWMs GENERAL DESCRIPTION FEATURES CM6901 is a SLS, SRC/LLC + SR resonant controller 90+ Controller and it can operate at both SRC and LLC region with Smaller and Thinner Transformer synchronous rectification to achieve high efficiency. Its
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