d06s60
Abstract: T-1228 to220 pcb footprint SDB06S60 SDP06S60 SDT06S60
Contextual Info: SDP06S60, SDB06S60 SDT06S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery
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sdp06s60sdb06s60sdt06s60p-to220-2-2+6p-to220-3p-to220-3-1q67040-s4371d06s60t-1228to220 pcb footprint
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d06s60
Abstract: D06S60C smd diode marking code UJ T-1228 SDB06S60 SDP06S60 SDT06S60 d 132 smd diode diode smd marking code 435
Contextual Info: SDP06S60, SDB06S60 SDT06S60 Preliminary data Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Product Summary V VRRM 600 Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark Qc 21 nC No reverse recovery
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sdp06s60sdb06s60sdt06s60p-to220-2-2+9p-to220-3p-to220-3-1q67040-s4371d06s60d06s60csmd diode marking code ujt-1228d 132 smd diodediode smd marking code 435
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SDP06S60
Contextual Info: SDP06S60 SDT06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery
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sdp06s60sdt06s60pg-to220-2-2p-to220+3p-to220-3q67040-s4371q67040-s4446
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d06s60
Abstract: D06S60C to220 pcb footprint smd diode marking code UJ T-1228 s4371 SDT06S60 SDB06S60 SDP06S60 AG Qc smd
Contextual Info: SDP06S60, SDB06S60 SDT06S60 Preliminary data Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Product Summary Revolutionary semiconductor V 600 VRRM material - Silicon Carbide Switching behavior benchmark Qc 21 nC No reverse recovery
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sdp06s60sdb06s60sdt06s60p-to220-2-21+10p-to220-3p-to220-3-1q67040-s4371d06s60d06s60cto220 pcb footprintsmd diode marking code ujt-1228s4371ag qc smd
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d06s60
Abstract: D06S60C SDT06S60 SDP06S60 Schottky diode TO220 T-1228 diode schottky 600v Q67040-S4446 600 V power Schottky silicon carbide diode PG-TO220-2-2
Contextual Info: SDP06S60 SDT06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery
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sdp06s60sdt06s60pg-to220-2-2p-to220+9p-to220-3q67040-s4371d06s60d06s60cschottky diode to220t-1228diode schottky 600vq67040-s4446600 v power schottky silicon carbide diode
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Q67040-S4371
Abstract: D06S60 P-TO220-3 SDT06S60 Q67040-S4446
Contextual Info: SDP06S60 SDT06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery
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sdp06s60sdt06s60pg-to220-2-2p-to220-3+3q67040-s4371q67040-s4446d06s60
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d06s60
Contextual Info: SDP06S60 SDT06S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery
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sdp06s60sdt06s60pg-to220-2-2pg-to220-3-1+3q67040-s4371q67040-s4446d06s60
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Q67040-S4370
Contextual Info: SDP06S60 SDB06S60 Preliminary data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery IF
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sdp06s60sdb06s60p-to220-3p-to220-3-1+3q67040-s4371d06s60q67040-s4370
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SIPC69N60C3
Abstract: SPW20N60S5 equivalent sipc01n80c2 P-Channel Depletion Mosfets SKP15N60 BUZ78 equivalent SPNA2N80C2 BUP314 SIPC26N80C3 TDA16822
Contextual Info: File name Products Silicon Carbide Diodes thinQ 300V / 600V SDP06S60 SDP04S60 SDB10S30 SiC_Pspice.zip Smart High Side Switches High-Current PROFET BTS555 BTS550P BTS650P PROFET_Pspice.exe Smart Low Side Switches TEMPFET / Speed TEMPFET HITFET BTS114A BSP78
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sdp06s60sdp04s60sdb10s30bts555+16bts550pbts650pbts114absp78bts115abts134dsipc69n60c3spw20n60s5 equivalentsipc01n80c2p-channel depletion mosfetsskp15n60buz78 equivalentspna2n80c2bup314sipc26n80c3tda16822
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03N60C3
Abstract: SPD03N60C3
Contextual Info: SPD03N60C3 SPU03N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 1.4 Ω • Extreme dv/dt rated ID 3.2
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spd03n60c3spu03n60c3p-to251p-to252+2q67040-s442103n60c3
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04N60C3
Abstract: 04N60C 04N60 SPU04N60C3 P-TO252 SDP06S60 SPD04N60C3
Contextual Info: SPD04N60C3 SPU04N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • High peak current capability
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spd04n60c3spu04n60c3p-to251p-to252+5q67040-s441204n60c304n60c04n60sdp06s60
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D06S60
Abstract: Q67040-S4370 P-TO263-3-2 T-1228 SDB06S60 SDP06S60 smd schottky diode marking 6a
Contextual Info: SDB06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery
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sdb06s60q67040-s4370d06s60p-to263-3-2+3t-1228sdp06s60smd schottky diode marking 6a
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07N60
Abstract: 07N60C3
Contextual Info: Final data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated • Extreme dv/dt rated
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spp07n60c3spb07n60c3spi07n60c3spa07n60c3+6p-to220-3-31p-to262-3-1p-to263-3-2p-to220-3-107n6007n60c3
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SPW47N60C3
Abstract: 47n60c3
Contextual Info: SPW47N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A • Ultra low effective capacitances
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07n60c2
Abstract: TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent P-TO252 SDP06S60 SPD07N60C2
Contextual Info: SPD07N60C2 SPU07N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Product Summary VDS 600 V Ultra low gate charge R DS(on)
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spd07n60c2spu07n60c2o-251o-252+11p-to251p-to252q67040-s431207n60c2transistor smd marking code 12wsmd transistor marking 12wtransistor smd 12wsmd transistor 12w 98smd transistor code 12w07n60c2 equivalentsdp06s60
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SPA11N60C2
Abstract: AN-TO220-3-31-01 11N60C2 11N60C GPT09301 SDP06S60
Contextual Info: Preliminary data SPA11N60C2 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated
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spa11n60c2p-to220-3-31q67040-s433211n60c2+4an-to220-3-31-0111n60cgpt09301sdp06s60
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07N60C2
Abstract: s4309 SPA07N60C2 SPB07N60C2 SPP07N60C2 Q67040-S4310 TRANSISTOR SMD MARKING CODE GFs 07n60c
Contextual Info: Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.6 Ω • Periodic avalanche rated ID 7.3 A • Extreme dv/dt rated
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spp07n60c2spb07n60c2spa07n60c2p-to220-3-31+8p-to263-3-2p-to220-3-1q67040-s430907n60c2s4309q67040-s4310transistor smd marking code gfs07n60c
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20n60c2
Abstract: 2002-08-12 spp20n60 SPA20N60C2 SPB20N60C2 SPP20N60C2
Contextual Info: Final data SPP20N60C2, SPB20N60C2 SPA20N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Worldwide best R DS on in TO 220 • Ultra low gate charge R DS(on) 0.19 Ω 20 A ID • Periodic avalanche rated
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spp20n60c2spb20n60c2spa20n60c2p-to220-3-31+6p-to263-3-2p-to220-3-1q67040-s432020n60c22002-08-12spp20n60
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04n60c3
Abstract: 04N60C3 equivalent SPA04N60C3 04N60C GPT09301 SDP06S60 AN-TO220-3-31-01
Contextual Info: SPA04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.95 Ω
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spa04n60c3p-to220-3-31q67040-s441304n60c3+504n60c3 equivalent04n60cgpt09301sdp06s60an-to220-3-31-01
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04n60c3
Abstract: 04N60C3 equivalent SPP04N60C3 04N60C SDP06S60 SPB04N60C3
Contextual Info: SPP04N60C3 SPB04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)
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spp04n60c3spb04n60c3p-to263-3-2p-to220-3-1+5q67040-s436604n60c304n60c3 equivalent04n60csdp06s60
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04N60C3 equivalent
Abstract: 04n60c3 04N60C 04n60 IT 239 P-TO252 SDP06S60 SPD04N60C3 SPU04N60C3
Contextual Info: SPD04N60C3 SPU04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)
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spd04n60c3spu04n60c3p-to251p-to252+7q67040-s441204n60c304n60c3 equivalent04n60c04n60it 239sdp06s60
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07n65c3
Abstract: PG-TO220-3 SPP07N65C3 SPA07N65C3 PG-TO262-3 PG-TO-220-3 SPI07N65C3 smd diode 46A
Contextual Info: SPP07N65C3, SPI07N65C3 SPA07N65C3 CoolMOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3 V DS 650 V RDS on 0.6 Ω ID 7.3 A PG-TO262-3-1 PG-TO220 • Extreme dv/dt rated
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spp07n65c3spi07n65c3spa07n65c3pg-to220-3+8pg-to262-3-1pg-to220p-to220-3-31p-to220-3-1pg-to-220-307n65c3pg-to262-3smd diode 46a
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07N60C3
Contextual Info: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on
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spp07n60c3spb07n60c3spi07n60c3p-to262-3-1+4p-to263-3-2p-to220-3-1q67040-s442207n60c3
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smd diode marking G12
Abstract: SPA07N60C3
Contextual Info: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated
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spp07n60c3spi07n60c3spa07n60c3p-to220-3-31+6pg-to220-3-31pg-to262-3pg-to220p-to220-3-1pg-to-220-3-31smd diode marking g12
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