D06S60C Search Results

D06S60C

Abstract: IDV06S60C Schottky diode TO220 JESD22 d06s60
Contextual Info: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV06S60C Data Sheet Rev. 2.0, 2010-01-14 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV06S60C Description

D06S60C

Contextual Info: IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior

IDT06S60C

Abstract: D06S60C
Contextual Info: IDT06S60C 2nd generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V Qc 15 nC • No reverse recovery/ No forward recovery I F @ T C < 140°C 6 A • Temperature independent switching behavior I F @ T C < 100°C 9 A • Revolutionary semiconductor material - Silicon Carbide

D06S60C

Contextual Info: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 15 nC IF 6 A • No temperature influence on the switching behavior

D06S60C

Contextual Info: IDH06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior

D06S60C

Abstract: IDT06S60C JESD22 d06s60
Contextual Info: IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior

D06S60C

Abstract: IDH06S60C JESD22 60-06A D06S60
Contextual Info: IDH06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior

Contextual Info: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV06S60C Data Sheet Rev. 2.0, 2010-01-14 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV06S60C Description

D06S60C

Abstract: IDB06S60C JESD22 smd diode MARKING F6 SMD F6 DIODE Diode smd f6
Contextual Info: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior

D06S60C

Abstract: Diode smd f6 schottky IDB06S60C JESD22 smd diode F6 Diode smd f6 SMD F6 DIODE smd diode MARKING F6
Contextual Info: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior

D06S60C

Abstract: d06s60 IDT06S60C JESD22 diode c25
Contextual Info: IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior

D06S60C

Contextual Info: IDH06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior

Contextual Info: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior

smd diode MARKING F6

Abstract: Diode smd f6 schottky d06s60 SMD F6 DIODE D06S60C smd diode F6
Contextual Info: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior