20MA2 Search Results

20m10

Abstract: 15MLS250 20M40 20M60 20MLA120 15MA400 20MH120 20MLA60 15FC11 15FD11
Contextual Info: - 40 - m ffi 15FCU 15FD11 15MA300 16MA400 15MLA160 15MLA180 15MLA200 15MLS160 15MLS200 15MLS250 20E1 20E2 20E4 20E6 20E8 20E10 20M10 20M15 20M20 20M30 20M40 20M50 20M60 20M80 20M100 20MA10 20MA20 2 OMA3 0 20MA40 2 OMA6 0 20MA80 20MA100 2 OMA120 20MA140 20MA160

20M20

Abstract: 20MA80 20M60 20m10 20M80 20M40 15MA400 20MA60 20MA160 20MH120
Contextual Info: - 40 - m ffi 15FCU 15FD11 15MA300 16MA400 15MLA160 15MLA180 15MLA200 15MLS160 15MLS200 15MLS250 20E1 20E2 20E4 20E6 20E8 20E10 20M10 20M15 20M20 20M30 20M40 20M50 20M60 20M80 20M100 20MA10 20MA20 2 OMA3 0 20MA40 2 OMA6 0 20MA80 20MA100 2 OMA120 20MA140 20MA160

20M60

Abstract: 20MA160 15MA400 20M30 20MA20 20MLA120 15MLS160 15MLS200 20M100 15MLS250
Contextual Info: - 40 - m ffi 15FCU 15FD11 15MA300 16MA400 15MLA160 15MLA180 15MLA200 15MLS160 15MLS200 15MLS250 20E1 20E2 20E4 20E6 20E8 20E10 20M10 20M15 20M20 20M30 20M40 20M50 20M60 20M80 20M100 20MA10 20MA20 2 OMA3 0 20MA40 2 OMA6 0 20MA80 20MA100 2 OMA120 20MA140 20MA160

20MA30

Abstract: 15MLS250 15MA400 20M40 20MA160 15FC11 15FD11 15MA300 20MA80 15MLA180
Contextual Info: - 40 - m ffi 15FCU 15FD11 15MA300 16MA400 15MLA160 15MLA180 15MLA200 15MLS160 15MLS200 15MLS250 20E1 20E2 20E4 20E6 20E8 20E10 20M10 20M15 20M20 20M30 20M40 20M50 20M60 20M80 20M100 20MA10 20MA20 2 OMA3 0 20MA40 2 OMA6 0 20MA80 20MA100 2 OMA120 20MA140 20MA160

20MLA120

Abstract: 20MA40 20M10 20M40 15MLS250 15MA400 20M20 20MA80 15FC11 15MA300
Contextual Info: - 40 - m ffi 15FCU 15FD11 15MA300 16MA400 15MLA160 15MLA180 15MLA200 15MLS160 15MLS200 15MLS250 20E1 20E2 20E4 20E6 20E8 20E10 20M10 20M15 20M20 20M30 20M40 20M50 20M60 20M80 20M100 20MA10 20MA20 2 OMA3 0 20MA40 2 OMA6 0 20MA80 20MA100 2 OMA120 20MA140 20MA160

welding

Contextual Info: Untitled Document 页码，1/2 Back Use and Features : full full stainless welding seal adjust adjust to bad environment high high stability 1. Capacity Series 2. Total Precision 3. Repeatability 4. Nonlinear Hysteresis

Contextual Info: nrtolex FEATURES AND SPECIFICATIONS 2.50m m .0 9 8 " Pitch W ire -to -W ire Crimp Terminal Features and Benefits Electrical m 50038 male terminal fo r use with 52116 Voltage: 250V H 50039 female terminal for use with 52117 Current: 3.0A Contact Resistance: 1OmCi max.

str 450A

Contextual Info: m o l e x 2.50m m .0 9 8 " Pitch SPOX W ire-to-Board 26 28 . Crimp Terminal 2.0 1.5 FEATURES AND SPECIFICATIONS Features and Benefits Electrical • Very low profile ■ Anti-fishhooking design ■ Box protects pin contact area from contamination during

Contextual Info: FEATURES AND SPECIFICATIONS Features and Benefits Electrical m Rigid contact Voltage: 250V Current: Reference Information Packaging: Chain or loose Tooling Information: See pages J-i 99 and J-200 AW G 22 24 A m pe res 3.0 2.5 m o l e x 2.50m m .0 9 8 " Pitch

Contextual Info: /" ~ V m o l e x 2.54m m .1 0 0 " Pitch KK Crimp Terminal FEATURES AND SPECIFICATIONS Features and Benefits Electrical f l Multiple contacting points Voltage: 250V B Patented triple cantilever with box shroud B Suitable fo r high vibration requirements

Contextual Info: m o l e x 2.50m m .0 9 8 " Pitch W ire-to-Board Crimp Terminal FEATURES AND SPECIFICATIONS Features and Benefits Electrical • 4 points of contact ■ Very low profile Voltage: 250V Current: Reference Inform ation Product Specification: PS-35074 Packaging: Reel

Contextual Info: PCS5I961P November 2006 rev 0.3 Low Voltage Zero Delay Buffer Features reference clock while the PCS5I961P offers an LVPECL reference clock. • Fully Integrated PLL • Up to 200MHz I/O Frequency When pulled high the OE pin will force all of the outputs •

Contextual Info: IDH05SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 6 nC • Temperature independent switching behavior IF; TC< 130 °C

smd diode marking f4

Abstract: idd04
Contextual Info: IDD04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features VDC 600 • Switching behavior benchmark Qc 8 nC • No reverse recovery/ No forward recovery IF 4 A • Revolutionary semiconductor material - Silicon Carbide V • No temperature influence on the switching behavior

SMD diode f9

Abstract: D09G60C IDD09SG60C JESD22 SMD F9
Contextual Info: IDD09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior

Contextual Info: IDT08S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark QC 19 nC • No reverse recovery/ No forward recovery I F @ T C < 140 °C 8 A • Temperature independent switching behavior I F @ T C < 100 °C

IDH09SG60C

Abstract: JESD22 D09G60C
Contextual Info: IDH09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior

D10G60C

Abstract: IDH10SG60C D10G60 JESD22
Contextual Info: IDH10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior

Contextual Info: ASM5I961P July 2005 rev 0.2 Low Voltage Zero Delay Buffer Features reference clock while the ASM5I961P offers an LVPECL ƒ Fully Integrated PLL reference clock. ƒ Up to 200MHz I/O Frequency When pulled high the OE pin will force all of the outputs ƒ LVCMOS Outputs

Contextual Info: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior

D08G60C

Contextual Info: IDH08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior

Contextual Info: IDD12SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior

Contextual Info: IDD05SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior

IDT06S60C

Abstract: D06S60C
Contextual Info: IDT06S60C 2nd generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V Qc 15 nC • No reverse recovery/ No forward recovery I F @ T C < 140°C 6 A • Temperature independent switching behavior I F @ T C < 100°C 9 A • Revolutionary semiconductor material - Silicon Carbide