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    D08G60C Search Results

    D08G60C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior


    Original
    idd08sg60c20ma2 PDF

    D08G60C

    Contextual Info: IDH08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior


    Original
    idh08sg60c20ma2pg-to220-2d08g60c PDF

    D08G60C

    Abstract: IDH08SG60C JESD22
    Contextual Info: IDH08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior


    Original
    idh08sg60c20ma2d08g60cjesd22 PDF

    D08G60C

    Contextual Info: IDH08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 12 nC • Temperature independent switching behavior IF; TC< 130 °C


    Original
    idh08sg60c20ma2pg-to220-2d08g60c PDF

    Contextual Info: IDH08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 12 nC • Temperature independent switching behavior IF; TC< 130 °C


    Original
    idh08sg60c20ma2 PDF

    D08G60C

    Abstract: IDD08SG60C JESD22 8 pin SMD
    Contextual Info: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior


    Original
    idd08sg60c20ma2d08g60cjesd22+18 pin smd PDF

    D08G60C

    Contextual Info: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior


    Original
    idd08sg60c20ma2pg-to252-3d08g60c PDF

    Contextual Info: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 12 nC • Temperature independent switching behavior IF; TC< 130 °C


    Original
    idd08sg60c20ma2 PDF

    D08G60C

    Contextual Info: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 12 nC • Temperature independent switching behavior IF; TC< 130 °C


    Original
    idd08sg60c20ma2pg-to252-3d08g60c PDF

    D08G60C

    Abstract: IDD08SG60C smd diode marking UJ JESD22
    Contextual Info: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior


    Original
    idd08sg60c20ma2d08g60csmd diode marking uj+1jesd22 PDF