D08G60C Search Results
D08G60C Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior |
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idd08sg60c20ma2 | |
D08G60CContextual Info: IDH08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior |
Original |
idh08sg60c20ma2pg-to220-2d08g60c | |
D08G60C
Abstract: IDH08SG60C JESD22
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Original |
idh08sg60c20ma2d08g60cjesd22 | |
D08G60CContextual Info: IDH08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 12 nC • Temperature independent switching behavior IF; TC< 130 °C |
Original |
idh08sg60c20ma2pg-to220-2d08g60c | |
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Contextual Info: IDH08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 12 nC • Temperature independent switching behavior IF; TC< 130 °C |
Original |
idh08sg60c20ma2 | |
D08G60C
Abstract: IDD08SG60C JESD22 8 pin SMD
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Original |
idd08sg60c20ma2d08g60cjesd22+1 | |
D08G60CContextual Info: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior |
Original |
idd08sg60c20ma2pg-to252-3d08g60c | |
|
Contextual Info: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 12 nC • Temperature independent switching behavior IF; TC< 130 °C |
Original |
idd08sg60c20ma2 | |
D08G60CContextual Info: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 12 nC • Temperature independent switching behavior IF; TC< 130 °C |
Original |
idd08sg60c20ma2pg-to252-3d08g60c | |
D08G60C
Abstract: IDD08SG60C smd diode marking UJ JESD22
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Original |
idd08sg60c20ma2d08g60csmd diode marking uj+1 |