IDD08SG60C Search Results
IDD08SG60C Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IDD08SG60C | Infineon Technologies | Silicon Carbide Schottky Diodes - NEW 3G now available!; Package: PG-TO252-3; Technology: thinQ! 3G; V: 600.0 V; IF (typ): 8.0 A; QC (typ): 12.0 nC; Package: DPAK (TO-252) | Original | 269.28KB | 7 | ||
| IDD08SG60CXTMA1 | Infineon Technologies | Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 600V 8A TO252-3 | Original | 725.29KB | |||
| IDD08SG60CXTMA2 | Infineon Technologies | Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 600V 8A TO252-3 | Original | 725.29KB |
IDD08SG60C Price and Stock
Infineon Technologies AG IDD08SG60CXTMA2Diode Schottky SiC 600V 8A 3-Pin(2+Tab) DPAK T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IDD08SG60CXTMA2 | 1,948 | 1 |
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IDD08SG60CXTMA2 | Tape & Reel | 52 Weeks | 2,500 |
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IDD08SG60CXTMA2 | Cut Strips | 1,948 | 52 Weeks | 1 |
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IDD08SG60CXTMA2 | Tape & Reel | 100 |
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| IDD08SG60CXTMA2 | Cut Tape | 1 |
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IDD08SG60CXTMA2 | 2,500 |
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Get Quote | |||||||
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IDD08SG60CXTMA2 | 2,500 | 53 Weeks | 2,500 |
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Buy Now | |||||
Infineon Technologies AG IDD08SG60CXTMA1Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon Carbide, TO-252 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IDD08SG60CXTMA1 | 4,754 |
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Get Quote | |||||||
IDD08SG60C Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior |
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idd08sg60c20ma2 | |
D08G60C
Abstract: IDD08SG60C JESD22 8 pin SMD
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idd08sg60c20ma2d08g60cjesd22+1 | |
D08G60CContextual Info: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior |
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idd08sg60c20ma2pg-to252-3d08g60c | |
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Contextual Info: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 12 nC • Temperature independent switching behavior IF; TC< 130 °C |
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idd08sg60c20ma2 | |
D08G60CContextual Info: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 12 nC • Temperature independent switching behavior IF; TC< 130 °C |
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idd08sg60c20ma2pg-to252-3d08g60c | |
D08G60C
Abstract: IDD08SG60C smd diode marking UJ JESD22
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idd08sg60c20ma2d08g60csmd diode marking uj+1 | |
igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
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igbt welding machine schemeikw40n120h3aircon l1smd diode schottky code marking sj+6 | |
PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
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lead519b152-h9345-g2-x-7600px3544px7510+8 | |
TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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tle4957csle66r35e7sak-xc2060m-104f80l aaesd204+6 | |
Infineon diffusion solder
Abstract: Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v
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600/650vsdb06s60idd02sg60cidd03sg60c+16 |