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    D06S60 Search Results

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    D06S60 Price and Stock

    Samtec Inc

    Samtec Inc TCSD-06-S-60.00-01

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    Avnet Americas TCSD-06-S-60.00-01 Bulk 1 Weeks, 6 Days 1
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    Master Electronics TCSD-06-S-60.00-01
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    Samtec Inc FFSD-06-S-60.00-01-N

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    Master Electronics FFSD-06-S-60.00-01-N
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    Samtec Inc IDSD-06-S-60.00

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    Newark IDSD-06-S-60.00 Bulk 1
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    Master Electronics IDSD-06-S-60.00
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    Samtec Inc IDSD-06-S-60.00-ST8

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    Newark IDSD-06-S-60.00-ST8 Bulk 1
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    Master Electronics IDSD-06-S-60.00-ST8
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    Samtec Inc IDSD-06-S-60.46

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    D06S60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    D06S60C

    Abstract: IDV06S60C Schottky diode TO220 JESD22 d06s60
    Contextual Info: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV06S60C Data Sheet Rev. 2.0, 2010-01-14 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV06S60C Description


    Original
    idv06s60cidvxxs60co220fullpakd06s60c+3schottky diode to220jesd22d06s60 PDF

    D06S60

    Abstract: Q67040-S4370 P-TO263-3-2 T-1228 SDB06S60 SDP06S60 smd schottky diode marking 6a
    Contextual Info: SDB06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original
    sdb06s60q67040-s4370d06s60p-to263-3-2+3t-1228sdp06s60smd schottky diode marking 6a PDF

    d06s60

    Abstract: T-1228 to220 pcb footprint SDB06S60 SDP06S60 SDT06S60
    Contextual Info: SDP06S60, SDB06S60 SDT06S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original
    sdp06s60sdb06s60sdt06s60p-to220-2-2+6p-to220-3p-to220-3-1q67040-s4371d06s60t-1228to220 pcb footprint PDF

    D06S60C

    Contextual Info: IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original
    idt06s60cpg-to220-2-2d06s60c PDF

    IDT06S60C

    Abstract: D06S60C
    Contextual Info: IDT06S60C 2nd generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V Qc 15 nC • No reverse recovery/ No forward recovery I F @ T C < 140°C 6 A • Temperature independent switching behavior I F @ T C < 100°C 9 A • Revolutionary semiconductor material - Silicon Carbide


    Original
    idt06s60cpg-to220-2-220ma2d06s60c PDF

    D06S60C

    Contextual Info: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 15 nC IF 6 A • No temperature influence on the switching behavior


    Original
    idb06s60cpg-to263-3-2d06s60c PDF

    D06S60C

    Contextual Info: IDH06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original
    idh06s60cpg-to220-2d06s60c PDF

    d06s60

    Abstract: D06S60C smd diode marking code UJ T-1228 SDB06S60 SDP06S60 SDT06S60 d 132 smd diode diode smd marking code 435
    Contextual Info: SDP06S60, SDB06S60 SDT06S60 Preliminary data Silicon Carbide Schottky Diode  Worlds first 600V Schottky diode Product Summary V VRRM 600  Revolutionary semiconductor material - Silicon Carbide  Switching behavior benchmark Qc 21 nC  No reverse recovery


    Original
    sdp06s60sdb06s60sdt06s60p-to220-2-2+9p-to220-3p-to220-3-1q67040-s4371d06s60d06s60csmd diode marking code ujt-1228d 132 smd diodediode smd marking code 435 PDF

    D06S60C

    Abstract: IDT06S60C JESD22 d06s60
    Contextual Info: IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original
    idt06s60cpg-to220-2-2d06s60cjesd22+1d06s60 PDF

    SDP06S60

    Contextual Info: SDP06S60 SDT06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original
    sdp06s60sdt06s60pg-to220-2-2p-to220+3p-to220-3q67040-s4371q67040-s4446 PDF

    d06s60

    Abstract: diode schottky 600v T-1228 SDB06S60 SDP06S60 smd diode marking code UJ
    Contextual Info: SDB06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original
    sdb06s60p-to220-3q67040-s4370d06s60+4diode schottky 600vt-1228sdp06s60smd diode marking code uj PDF

    d06s60

    Abstract: D06S60C to220 pcb footprint smd diode marking code UJ T-1228 s4371 SDT06S60 SDB06S60 SDP06S60 AG Qc smd
    Contextual Info: SDP06S60, SDB06S60 SDT06S60 Preliminary data Silicon Carbide Schottky Diode  Worlds first 600V Schottky diode Product Summary  Revolutionary semiconductor V 600 VRRM material - Silicon Carbide  Switching behavior benchmark Qc 21 nC  No reverse recovery


    Original
    sdp06s60sdb06s60sdt06s60p-to220-2-21+10p-to220-3p-to220-3-1q67040-s4371d06s60d06s60cto220 pcb footprintsmd diode marking code ujt-1228s4371ag qc smd PDF

    d06s60

    Abstract: D06S60C SDT06S60 SDP06S60 Schottky diode TO220 T-1228 diode schottky 600v Q67040-S4446 600 V power Schottky silicon carbide diode PG-TO220-2-2
    Contextual Info: SDP06S60 SDT06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original
    sdp06s60sdt06s60pg-to220-2-2p-to220+9p-to220-3q67040-s4371d06s60d06s60cschottky diode to220t-1228diode schottky 600vq67040-s4446600 v power schottky silicon carbide diode PDF

    D06S60C

    Abstract: IDH06S60C JESD22 60-06A D06S60
    Contextual Info: IDH06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original
    idh06s60cpg-to220-2d06s60cjesd22+260-06ad06s60 PDF

    Contextual Info: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV06S60C Data Sheet Rev. 2.0, 2010-01-14 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV06S60C Description


    Original
    idv06s60cidvxxs60co220fullpak PDF

    D06S60C

    Abstract: IDB06S60C JESD22 smd diode MARKING F6 SMD F6 DIODE Diode smd f6
    Contextual Info: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original
    idb06s60cd06s60cjesd22smd diode marking f6+2smd f6 diodediode smd f6 PDF

    Q67040-S4371

    Abstract: D06S60 P-TO220-3 SDT06S60 Q67040-S4446
    Contextual Info: SDP06S60 SDT06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original
    sdp06s60sdt06s60pg-to220-2-2p-to220-3+3q67040-s4371q67040-s4446d06s60 PDF

    D06S60C

    Abstract: Diode smd f6 schottky IDB06S60C JESD22 smd diode F6 Diode smd f6 SMD F6 DIODE smd diode MARKING F6
    Contextual Info: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original
    idb06s60cpg-to220-3-45d06s60cdiode smd f6 schottky+5jesd22smd diode f6diode smd f6smd f6 diodesmd diode marking f6 PDF

    d06s60

    Contextual Info: SDP06S60 SDT06S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original
    sdp06s60sdt06s60pg-to220-2-2pg-to220-3-1+3q67040-s4371q67040-s4446d06s60 PDF

    Q67040-S4370

    Contextual Info: SDP06S60 SDB06S60 Preliminary data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery IF


    Original
    sdp06s60sdb06s60p-to220-3p-to220-3-1+3q67040-s4371d06s60q67040-s4370 PDF

    D06S60C

    Abstract: d06s60 IDT06S60C JESD22 diode c25
    Contextual Info: IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original
    idt06s60cpg-to220-2-2d06s60cd06s60+2jesd22diode c25 PDF

    D06S60C

    Contextual Info: IDH06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original
    idh06s60cpg-to220-2d06s60c PDF

    Contextual Info: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original
    idb06s60cpg-to220-3-45d06s60c PDF

    smd diode MARKING F6

    Abstract: Diode smd f6 schottky d06s60 SMD F6 DIODE D06S60C smd diode F6
    Contextual Info: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original
    idb06s60cpg-to220-3-45d06s60csmd diode marking f6+4diode smd f6 schottkyd06s60smd f6 diodesmd diode f6 PDF