D06S60 Search Results
D06S60 Price and Stock
Samtec Inc TCSD-06-S-60.00-01- Bulk (Alt: TCSD-06-S-60.00-01) |
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Samtec Inc FFSD-06-S-60.00-01-N- Bulk (Alt: FFSD-06-S-60.00-01-N) |
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FFSD-06-S-60.00-01-N | Bulk | 1 Weeks, 5 Days | 1 |
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Samtec Inc IDSD-06-S-60.00- Bulk (Alt: IDSD-06-S-60.00) |
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IDSD-06-S-60.00 | Bulk | 1 Weeks, 5 Days | 1 |
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Samtec Inc IDSD-06-S-60.00-ST8- Bulk (Alt: IDSD-06-S-60.00-ST8) |
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IDSD-06-S-60.00-ST8 | Bulk | 2 Weeks | 1 |
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Samtec Inc IDSD-06-S-60.46 |
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D06S60 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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D06S60C
Abstract: IDV06S60C Schottky diode TO220 JESD22 d06s60
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idv06s60cidvxxs60co220fullpakd06s60c+3 | |
D06S60
Abstract: Q67040-S4370 P-TO263-3-2 T-1228 SDB06S60 SDP06S60 smd schottky diode marking 6a
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sdb06s60q67040-s4370d06s60p-to263-3-2+3 | |
d06s60
Abstract: T-1228 to220 pcb footprint SDB06S60 SDP06S60 SDT06S60
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sdp06s60sdb06s60sdt06s60p-to220-2-2+6 | |
D06S60CContextual Info: IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
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idt06s60cpg-to220-2-2d06s60c | |
IDT06S60C
Abstract: D06S60C
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idt06s60cpg-to220-2-220ma2d06s60c | |
D06S60CContextual Info: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 15 nC IF 6 A • No temperature influence on the switching behavior |
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idb06s60cpg-to263-3-2d06s60c | |
D06S60CContextual Info: IDH06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
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idh06s60cpg-to220-2d06s60c | |
d06s60
Abstract: D06S60C smd diode marking code UJ T-1228 SDB06S60 SDP06S60 SDT06S60 d 132 smd diode diode smd marking code 435
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sdp06s60sdb06s60sdt06s60p-to220-2-2+9 | |
D06S60C
Abstract: IDT06S60C JESD22 d06s60
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idt06s60cpg-to220-2-2d06s60cjesd22+1 | |
SDP06S60Contextual Info: SDP06S60 SDT06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery |
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sdp06s60sdt06s60pg-to220-2-2p-to220+3 | |
d06s60
Abstract: diode schottky 600v T-1228 SDB06S60 SDP06S60 smd diode marking code UJ
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sdb06s60p-to220-3q67040-s4370d06s60+4 | |
d06s60
Abstract: D06S60C to220 pcb footprint smd diode marking code UJ T-1228 s4371 SDT06S60 SDB06S60 SDP06S60 AG Qc smd
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sdp06s60sdb06s60sdt06s60p-to220-2-21+10 | |
d06s60
Abstract: D06S60C SDT06S60 SDP06S60 Schottky diode TO220 T-1228 diode schottky 600v Q67040-S4446 600 V power Schottky silicon carbide diode PG-TO220-2-2
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sdp06s60sdt06s60pg-to220-2-2p-to220+9 | |
D06S60C
Abstract: IDH06S60C JESD22 60-06A D06S60
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idh06s60cpg-to220-2d06s60cjesd22+2 | |
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Contextual Info: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV06S60C Data Sheet Rev. 2.0, 2010-01-14 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV06S60C Description |
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idv06s60cidvxxs60co220fullpak | |
D06S60C
Abstract: IDB06S60C JESD22 smd diode MARKING F6 SMD F6 DIODE Diode smd f6
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idb06s60cd06s60cjesd22smd diode marking f6+2 | |
Q67040-S4371
Abstract: D06S60 P-TO220-3 SDT06S60 Q67040-S4446
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sdp06s60sdt06s60pg-to220-2-2p-to220-3+3 | |
D06S60C
Abstract: Diode smd f6 schottky IDB06S60C JESD22 smd diode F6 Diode smd f6 SMD F6 DIODE smd diode MARKING F6
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idb06s60cpg-to220-3-45d06s60cdiode smd f6 schottky+5 | |
d06s60Contextual Info: SDP06S60 SDT06S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery |
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sdp06s60sdt06s60pg-to220-2-2pg-to220-3-1+3 | |
Q67040-S4370Contextual Info: SDP06S60 SDB06S60 Preliminary data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery IF |
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sdp06s60sdb06s60p-to220-3p-to220-3-1+3 | |
D06S60C
Abstract: d06s60 IDT06S60C JESD22 diode c25
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idt06s60cpg-to220-2-2d06s60cd06s60+2 | |
D06S60CContextual Info: IDH06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
Original |
idh06s60cpg-to220-2d06s60c | |
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Contextual Info: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
Original |
idb06s60cpg-to220-3-45d06s60c | |
smd diode MARKING F6
Abstract: Diode smd f6 schottky d06s60 SMD F6 DIODE D06S60C smd diode F6
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idb06s60cpg-to220-3-45d06s60csmd diode marking f6+4 | |