GPT09301 Search Results

GPT09301 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
20n60c3 Abstract: 20N60C3 equivalent sp*20n60c3 20n60c Q67040-S4397 diode smd marking code 621 20n60 SPB20N60C3 S4410 spp20n60 Contextual Info: Preliminary data SPP20N60C3, SPB20N60C3 SPA20N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Worldwide best RDS on in TO 220 RDS(on) 0.19 Ω ID 20.7 A • Ultra low gate charge	Original	spp20n60c3 spb20n60c3 spa20n60c3 p-to220-3-31 +12p-to263-3-2 p-to220-3-1 q67040-s4398 20n60c3 20n60c3 equivalent sp*20n60c3 20n60c q67040-s4397 diode smd marking code 621 20n60 s4410 spp20n60	PDF
11N60C3 Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3 Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated	Original	spp11n60c3 spb11n60c3 spi11n60c3 spa11n60c3 +10p-to220-3-31 p-to262-3-1 p-to263-3-2 p-to220-3-1 11n60c3 transistor 11n60c3 11n60c 11n60 q67040-s4395 q67040-s4396	PDF
SPA11N60C2 Abstract: AN-TO220-3-31-01 11N60C2 11N60C GPT09301 SDP06S60 Contextual Info: Preliminary data SPA11N60C2 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated	Original	spa11n60c2 p-to220-3-31 q67040-s4332 11n60c2 +4an-to220-3-31-01 11n60c gpt09301 sdp06s60	PDF
04n60c3 Abstract: 04N60C3 equivalent SPA04N60C3 04N60C GPT09301 SDP06S60 AN-TO220-3-31-01 Contextual Info: SPA04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.95 Ω	Original	spa04n60c3 p-to220-3-31 q67040-s4413 04n60c3 +504n60c3 equivalent 04n60c gpt09301 sdp06s60 an-to220-3-31-01	PDF
SPA04N80C3 Contextual Info: SPA04N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 1.3 Ω • Extreme dv/dt rated	Original	spa04n80c3 p-to220-3-31 04n80c3 q67040-s4434	PDF
diode 71A Abstract: SPA06N80C3 Contextual Info: SPA06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.9 Ω • Extreme dv/dt rated	Original	spa06n80c3 p-to220-3-31 06n80c3 q67040-s4435 +1diode 71a	PDF
Contextual Info: SPA04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.95 Ω • Extreme dv/dt rated	Original	spa04n60c3 p-to220-3-31 04n60c3 q67040-s4413	PDF
SPA07N60C3 Contextual Info: SPA07N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.6 Ω • Extreme dv/dt rated	Original	spa07n60c3 p-to220-3-31 07n60c3 q67040-s4409	PDF
SPA11N80C3 Contextual Info: SPA11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated	Original	spa11n80c3 p-to220-3-31 11n80c3 q67040-s4439	PDF
04n60c3 Contextual Info: Preliminary data SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax - V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A •=Periodic avalanche rated • Extreme dv/dt rated	Original	spp04n60c3 spb04n60c3 spa04n60c3 p-to220-3-31 +4p-to263-3-2 p-to220-3-1 q67040-s4366 04n60c3	PDF
Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.38 Ω •=Periodic avalanche rated ID	Original	spp11n60c3 spb11n60c3 spi11n60c3 spa11n60c3 +4p-to220-3-31 p-to262-3-1 p-to263-3-2 p-to220-3-1	PDF
20N60C3 Abstract: 20N60C3 equivalent SPA20N60C3 s4410 AN-TO220-3-31-01 GPT09301 SDP06S60 transistor 20N60c3 Contextual Info: SPA20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.19 Ω	Original	spa20n60c3 p-to220-3-31 q67040-s4410 20n60c3 +620n60c3 equivalent s4410 an-to220-3-31-01 gpt09301 sdp06s60 transistor 20n60c3	PDF
Q67040-S4408 Abstract: 11N60C AR1010 Contextual Info: SPA11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated	Original	spa11n60c3 p-to220-3-31 11n60c3 q67040-s4408 +211n60c ar1010	PDF
07N60C3 Abstract: 07N60 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3 Contextual Info: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated	Original	spp07n60c3 spb07n60c3 spi07n60c3 spa07n60c3 +7p-to220-3-31 p-to262-3-1 p-to263-3-2 p-to220-3-1 07n60c3 07n60 07n60c	PDF

04n60c2 Abstract: UA716 SPA04N60C2 04N60C 04n60 AN-TO220-3-31-01 GPT09301 SDP06S60 Contextual Info: Preliminary data SPA04N60C2 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated RDS on 0.95 Ω • Extreme dv/dt rated	Original	spa04n60c2 p-to220-3-31 q67040-s4330 04n60c2 +6ua716 04n60c 04n60 an-to220-3-31-01 gpt09301 sdp06s60	PDF
Contextual Info: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.6 Ω •=Periodic avalanche rated ID	Original	spp07n60c3 spb07n60c3 spi07n60c3 spa07n60c3 +4p-to220-3-31 p-to262-3-1 p-to263-3-2 p-to220-3-1	PDF
04n60c3 Abstract: 04N60C 04N60 04N60C3 equivalent SPB04N60C3 SPA04N60C3 SPP04N60C3 Contextual Info: Preliminary data SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A • Periodic avalanche rated • Extreme dv/dt rated	Original	spp04n60c3 spb04n60c3 spa04n60c3 p-to220-3-31 +7p-to263-3-2 p-to220-3-1 q67040-s4366 04n60c3 04n60c 04n60 04n60c3 equivalent	PDF
20n60c3 Abstract: SPA20N60C3 transistor 20N60c3 Q67040-S4410 Contextual Info: SPA20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.19 Ω	Original	spa20n60c3 p-to220-3-31 20n60c3 q67040-s4410 +1transistor 20n60c3	PDF
spa17n80c3 Abstract: 17n80c3 Contextual Info: SPA17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 800 V RDS(on) 0.29 Ω •=Periodic avalanche rated	Original	spa17n80c3 p-to220-3-31 17n80c3 q67040-s4441	PDF
08N80C3 Abstract: SPA08N80C3 Contextual Info: SPA08N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.65 Ω • Extreme dv/dt rated	Original	spa08n80c3 p-to220-3-31 08n80c3 q67040-s4437	PDF
SPA11N60C3 Abstract: SPA11N60C3 application note Q67040-S4408 11N60C3 AN-TO220-3-31-01 GPT09301 SDP06S60 Contextual Info: SPA11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.38 Ω	Original	spa11n60c3 p-to220-3-31 q67040-s4408 11n60c3 +4spa11n60c3 application note an-to220-3-31-01 gpt09301 sdp06s60	PDF
SPA07N60C3 Abstract: Q67040-S4409 07n60c3 AN-TO220-3-31-01 GPT09301 SDP06S60 Contextual Info: SPA07N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.6 Ω •=Periodic avalanche rated	Original	spa07n60c3 p-to220-3-31 q67040-s4409 07n60c3 +3an-to220-3-31-01 gpt09301 sdp06s60	PDF
07N60C2 Abstract: SPA07N60C2 2-S10 AN-TO220-3-31-01 GPT09301 SDP06S60 Q67040-S4331 Contextual Info: Preliminary data SPA07N60C2 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated RDS on 0.6 Ω • Extreme dv/dt rated	Original	spa07n60c2 p-to220-3-31 q67040-s4331 07n60c2 +42-s10 an-to220-3-31-01 gpt09301 sdp06s60	PDF
20n60c3 Contextual Info: Preliminary data SPP20N60C3, SPB20N60C3 SPA20N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Worldwide best R DS on in TO 220 • Ultra low gate charge R DS(on) 0.19 Ω ID 20.7	Original	spp20n60c3 spb20n60c3 spa20n60c3 p-to220-3-31 +4p-to263-3-2 p-to220-3-1 q67040-s4398 20n60c3	PDF

GPT09301 Search Results

GPT09301 Datasheets Context Search

20n60c3

11N60C3

SPA11N60C2

04n60c3

SPA04N80C3

diode 71A

SPA07N60C3

SPA11N80C3

04n60c3

20N60C3

Q67040-S4408

07N60C3

04n60c2

04n60c3

20n60c3

spa17n80c3

08N80C3

SPA11N60C3

SPA07N60C3

07N60C2

20n60c3