Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    11N60C3 Search Results

    SF Impression Pixel

    11N60C3 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG SPB11N60C3

    MOSFETs N-Ch 600V 11A D2PAK-2 CoolMOS C3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SPB11N60C3 991
    • 1 $4.31
    • 10 $2.37
    • 100 $2.16
    • 1000 $1.74
    • 10000 $1.74
    		Buy Now

    11N60C3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    11N60C3

    Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3
    Contextual Info: Preliminary data 11N60C3, 11N60C3 11N60C3, 11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated


    Original     		spp11n60c3spb11n60c3spi11n60c3spa11n60c3+10p-to220-3-31p-to262-3-1p-to263-3-2p-to220-3-111n60c3transistor 11n60c311n60c11n60q67040-s4395q67040-s4396 PDF

    Contextual Info: 11N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated ID 11 A •=High peak current capability


    Original     		spw11n60c3p-to247q67040-s441811n60c3 PDF

    11n60c3

    Abstract: 11N60 SDP06S60 SPW11N60C3 06161L 11N60C
    Contextual Info: 11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.38 Ω


    Original     		spw11n60c3p-to247q67040-s441811n60c3+411n60sdp06s6006161l11n60c PDF

    11n60c3

    Abstract: transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 E8185
    Contextual Info: 11N60C3 11N60C3, 11N60C3, 11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220


    Original     		spp11n60c3spi11n60c3spa11n60c3e8185+8p-to220-3-31pg-to220fppg-to262pg-to220pg-to-220-3-3111n60c3transistor 11n60c3spa11n60c3e8185 PDF

    Contextual Info: 11N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability


    Original     		spw11n60c3p-to247q67040-s441811n60c3 PDF

    Contextual Info: Preliminary data 11N60C3, 11N60C3 11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature New revolutionary high voltage technology Product Summary  Worldwide best R DS on in TO 220 VDS @ Tjmax 650 V  Ultra low gate charge


    Original     		spp11n60c3spb11n60c3spi11n60c3p-to262-3-1+2p-to263-3-2p-to220-3-1 PDF

    SPD06S60

    Abstract: 11N60C3 transistor 11n60c3
    Contextual Info: 11N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • High peak current capability


    Original     		spw11n60c3p-to247q67040-s441811n60c3+2spd06s60transistor 11n60c3 PDF

    11n60c3

    Abstract: 11N60C SPA11N60C3 equivalent SPA11N60C3E8185 11N60 E8185 SPP11N60C3 SPA11N60C3 SPD06S60 transistor 11n60c3
    Contextual Info: 11N60C3 11N60C3, 11N60C3, 11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220


    Original     		spp11n60c3spi11n60c3spa11n60c3e8185+12pg-to220fppg-to262pg-to220p-to220-3-31pg-to-220-3-3111n60c311n60cspa11n60c3 equivalentspa11n60c3e818511n60spd06s60transistor 11n60c3 PDF

    11n60c3

    Abstract: SPA11N60C3E8185 11N60C SPA11N60C3 equivalent SPA11N60C3 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3
    Contextual Info: 11N60C3 11N60C3, 11N60C3, 11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220


    Original     		spp11n60c3spi11n60c3spa11n60c3e8185+12pg-to220fppg-to262pg-to220p-to220-3-31pg-to-220-3-3111n60c3spa11n60c3e818511n60cspa11n60c3 equivalent11n60transistor 11n60c3q67040-s4395 PDF

    Contextual Info: Preliminary data 11N60C3, 11N60C3 11N60C3, 11N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.38 Ω •=Periodic avalanche rated ID


    Original     		spp11n60c3spb11n60c3spi11n60c3spa11n60c3+4p-to220-3-31p-to262-3-1p-to263-3-2p-to220-3-1 PDF

    11N60C3

    Abstract: 11N60C SPW11N60C3 AR1010
    Contextual Info: 11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated


    Original     		spw11n60c3p-to247q67040-s441811n60c3+211n60car1010 PDF

    Q67040-S4408

    Abstract: 11N60C AR1010
    Contextual Info: 11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated


    Original     		spa11n60c3p-to220-3-3111n60c3q67040-s4408+211n60car1010 PDF

    11N60C3

    Abstract: transistor 11n60c3
    Contextual Info: 11N60C3, 11N60C3 11N60C3, 11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2


    Original     		spp11n60c3spb11n60c3spi11n60c3spa11n60c3+7p-to220-3-31p-to262-3-1p-to263-3-2p-to220-3-1p-to-220-3-3111n60c3transistor 11n60c3 PDF

    11N60C3

    Abstract: transistor 11n60c3
    Contextual Info: Preliminary data 11N60C3, 11N60C3 11N60C3, 11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated


    Original     		spp11n60c3spb11n60c3spi11n60c3spa11n60c3+6p-to220-3-31p-to262-3-1p-to263-3-2p-to220-3-111n60c3transistor 11n60c3 PDF

    SP000216312

    Abstract: 11N6
    Contextual Info: 11N60C3 11N60C3, 11N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated


    Original     		spp11n60c3spi11n60c3spa11n60c3p-to220-3-31+6pg-to220-3-31pg-to262-3pg-to220pg-to-220-3-31sp00021631211n6 PDF

    transistor 11n60c3

    Abstract: SPP11N60C3 Q67040-S4408 11N60C3 11N60C
    Contextual Info: 11N60C3 11N60C3, 11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		spp11n60c3spi11n60c3spa11n60c3p-to220-3-31+8pg-to220-3-31pg-to262-3-1pg-to220-3-1pg-to-220-3-31transistor 11n60c3q67040-s440811n60c311n60c PDF

    Contextual Info: 11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • High peak current capability


    Original     		spb11n60c3pg-to263q67040-s439611n60c3 PDF

    11n60c3

    Abstract: 11N60C SPB11N60C3 Q67040-S4396 SPD06S60 SPP11N60C3 4016A 11N60
    Contextual Info: 11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • High peak current capability


    Original     		spb11n60c3pg-to263q67040-s439611n60c3+611gerous11n60cspd06s60spp11n60c34016a11n60 PDF

    11N60C3

    Abstract: 11N60C 11N60 SPP11N60C3 Q67042-S4403 TRANSISTOR SMD MARKING CODE 7A Q67040-S4395 Q67040-S4396 SPB11N60C3 SPI11N60C3
    Contextual Info: Preliminary data 11N60C3, 11N60C3 11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax


    Original     		spp11n60c3spb11n60c3spi11n60c3p-to262-3-1+9p-to263-3-2p-to220-3-1q67040-s439511n60c311n60c11n60q67042-s4403transistor smd marking code 7aq67040-s4396 PDF

    Contextual Info: 11N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • High peak current capability


    Original     		spw11n60c3p-to247q67040-s441811n60c3 PDF

    Contextual Info: 11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 • Extreme dv/dt rated • High peak current capability


    Original     		spb11n60c3p-to263-3-2q67040-s439611n60c3 PDF

    Contextual Info: 11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • High peak current capability


    Original     		spb11n60c3pg-to263q67040-s439611n60c3 PDF

    11n60c3

    Abstract: transistor 11n60c3 11N60C SPB11N60C3 SPP11N60C3 Q67040-S4395 SPA11N60C3 SPI11N60C3 11N60
    Contextual Info: 11N60C3, 11N60C3 11N60C3, 11N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		spp11n60c3spb11n60c3spi11n60c3spa11n60c3+10p-to220-3-31p-to262-3-1p-to263-3-2p-to220-3-1p-to-220-3-3111n60c3transistor 11n60c311n60cq67040-s439511n60 PDF

    11n60c3

    Contextual Info: 11N60C3 11N60C3, 11N60C3, 11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO220FP • Periodic avalanche rated PG-TO262 PG-TO220


    Original     		spp11n60c3spi11n60c3spa11n60c3e8185+6pg-to220fppg-to262pg-to220p-to220-3-31pg-to-220-3-3111n60c3 PDF