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Infineon Technologies AG


Infineon Technologies AG SPP11N60C3XKSA1 - Rail/Tube (Alt: SPP11N60C3XKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SPP11N60C3XKSA1	Tube	450		500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	SPP11N60C3XKSA1	Bulk	228		1	1 $4.00 10 $2.26 100 $2.09 1000 $1.85 10000 $1.75	Buy Now
Rochester Electronics	SPP11N60C3XKSA1		240		1	1 - 10 - 100 $1.55 1000 $1.29 10000 $1.15	Buy Now
TME	SPP11N60C3XKSA1				1	1 $3.23 10 $1.90 100 $1.51 1000 $1.28 10000 $1.22	Get Quote
Ameya Holding Limited	SPP11N60C3XKSA1		7,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

EBV Elektronik	SPP11N60C3XKSA1			51 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	SPP11N60C3XKSA1		7,672			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPB11N60C3ATMA1 - Bulk (Alt: 47W3752)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	SPB11N60C3ATMA1	Bulk			1	1 $4.62 10 $3.05 100 $2.15 1000 $1.84 10000 $1.84	Get Quote
	SPB11N60C3ATMA1	Tape & Reel		8 Weeks	1,000	1 - 10 - 100 - 1000 $0.77 10000 $0.76	Buy Now
Newark	SPB11N60C3ATMA1	Bulk	1,278		1	1 $4.62 10 $3.05 100 $2.15 1000 $1.84 10000 $1.84	Buy Now
Rochester Electronics	SPB11N60C3ATMA1		300		1	1 - 10 - 100 $1.50 1000 $1.34 10000 $1.26	Buy Now
TME	SPB11N60C3ATMA1				1,000	1 - 10 - 100 - 1000 $1.51 10000 $1.33	Get Quote
EBV Elektronik	SPB11N60C3ATMA1			9 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPI11N60C3HKSA1 Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: SPI11N60C3HKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SPI11N60C3HKSA1	Tube				1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPP11N60C3HKSA1 Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: SPP11N60C3HKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SPP11N60C3HKSA1	Tube				1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPA11N60C3XKSA1 Trans MOSFET N-CH 600V 11A 3-Pin TO-220FP Tube - Rail/Tube (Alt: SPA11N60C3XKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SPA11N60C3XKSA1	Tube			500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	SPA11N60C3XKSA1	Bulk	34		1	1 $3.73 10 $2.72 100 $1.71 1000 $1.49 10000 $1.43	Buy Now
Rochester Electronics	SPA11N60C3XKSA1		1,675		1	1 - 10 - 100 $1.24 1000 $1.11 10000 $1.04	Buy Now
TME	SPA11N60C3XKSA1				500	1 - 10 - 100 - 1000 $1.20 10000 $1.20	Get Quote
EBV Elektronik	SPA11N60C3XKSA1			44 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Vyrian	SPA11N60C3XKSA1		4,185			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPA11N60C3XKSA1		6,590			1 - 10 - 100 $1.31 1000 $1.09 10000 $1.09	Buy Now

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11N60C3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
11N60C3 Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3 Contextual Info: Preliminary data 11N60C3, 11N60C3 11N60C3, 11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated	Original	spp11n60c3 spb11n60c3 spi11n60c3 spa11n60c3 +10p-to220-3-31 p-to262-3-1 p-to263-3-2 p-to220-3-1 11n60c3 transistor 11n60c3 11n60c 11n60 q67040-s4395 q67040-s4396	PDF
Contextual Info: 11N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated ID 11 A •=High peak current capability	Original	spw11n60c3 p-to247 q67040-s4418 11n60c3	PDF
11n60c3 Abstract: 11N60 SDP06S60 SPW11N60C3 06161L 11N60C Contextual Info: 11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.38 Ω	Original	spw11n60c3 p-to247 q67040-s4418 11n60c3 +411n60 sdp06s60 06161l 11n60c	PDF
11n60c3 Abstract: transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 E8185 Contextual Info: 11N60C3 11N60C3, 11N60C3, 11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220	Original	spp11n60c3 spi11n60c3 spa11n60c3 e8185 +8p-to220-3-31 pg-to220fp pg-to262 pg-to220 pg-to-220-3-31 11n60c3 transistor 11n60c3 spa11n60c3e8185	PDF
Contextual Info: 11N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability	Original	spw11n60c3 p-to247 q67040-s4418 11n60c3	PDF
Contextual Info: Preliminary data 11N60C3, 11N60C3 11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature New revolutionary high voltage technology Product Summary Worldwide best R DS on in TO 220 VDS @ Tjmax 650 V Ultra low gate charge	Original	spp11n60c3 spb11n60c3 spi11n60c3 p-to262-3-1 +2p-to263-3-2 p-to220-3-1	PDF
SPD06S60 Abstract: 11N60C3 transistor 11n60c3 Contextual Info: 11N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • High peak current capability	Original	spw11n60c3 p-to247 q67040-s4418 11n60c3 +2spd06s60 transistor 11n60c3	PDF
11n60c3 Abstract: 11N60C SPA11N60C3 equivalent SPA11N60C3E8185 11N60 E8185 SPP11N60C3 SPA11N60C3 SPD06S60 transistor 11n60c3 Contextual Info: 11N60C3 11N60C3, 11N60C3, 11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220	Original	spp11n60c3 spi11n60c3 spa11n60c3 e8185 +12pg-to220fp pg-to262 pg-to220 p-to220-3-31 pg-to-220-3-31 11n60c3 11n60c spa11n60c3 equivalent spa11n60c3e8185 11n60 spd06s60 transistor 11n60c3	PDF
11n60c3 Abstract: SPA11N60C3E8185 11N60C SPA11N60C3 equivalent SPA11N60C3 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3 Contextual Info: 11N60C3 11N60C3, 11N60C3, 11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220	Original	spp11n60c3 spi11n60c3 spa11n60c3 e8185 +12pg-to220fp pg-to262 pg-to220 p-to220-3-31 pg-to-220-3-31 11n60c3 spa11n60c3e8185 11n60c spa11n60c3 equivalent 11n60 transistor 11n60c3 q67040-s4395	PDF
Contextual Info: Preliminary data 11N60C3, 11N60C3 11N60C3, 11N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.38 Ω •=Periodic avalanche rated ID	Original	spp11n60c3 spb11n60c3 spi11n60c3 spa11n60c3 +4p-to220-3-31 p-to262-3-1 p-to263-3-2 p-to220-3-1	PDF
11N60C3 Abstract: 11N60C SPW11N60C3 AR1010 Contextual Info: 11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated	Original	spw11n60c3 p-to247 q67040-s4418 11n60c3 +211n60c ar1010	PDF
Q67040-S4408 Abstract: 11N60C AR1010 Contextual Info: 11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated	Original	spa11n60c3 p-to220-3-31 11n60c3 q67040-s4408 +211n60c ar1010	PDF
11N60C3 Abstract: transistor 11n60c3 Contextual Info: 11N60C3, 11N60C3 11N60C3, 11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2	Original	spp11n60c3 spb11n60c3 spi11n60c3 spa11n60c3 +7p-to220-3-31 p-to262-3-1 p-to263-3-2 p-to220-3-1 p-to-220-3-31 11n60c3 transistor 11n60c3	PDF
11N60C3 Abstract: transistor 11n60c3 Contextual Info: Preliminary data 11N60C3, 11N60C3 11N60C3, 11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated	Original	spp11n60c3 spb11n60c3 spi11n60c3 spa11n60c3 +6p-to220-3-31 p-to262-3-1 p-to263-3-2 p-to220-3-1 11n60c3 transistor 11n60c3	PDF

SP000216312 Abstract: 11N6 Contextual Info: 11N60C3 11N60C3, 11N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated	Original	spp11n60c3 spi11n60c3 spa11n60c3 p-to220-3-31 +6pg-to220-3-31 pg-to262-3 pg-to220 pg-to-220-3-31 sp000216312 11n6	PDF
transistor 11n60c3 Abstract: SPP11N60C3 Q67040-S4408 11N60C3 11N60C Contextual Info: 11N60C3 11N60C3, 11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 • Extreme dv/dt rated	Original	spp11n60c3 spi11n60c3 spa11n60c3 p-to220-3-31 +8pg-to220-3-31 pg-to262-3-1 pg-to220-3-1 pg-to-220-3-31 transistor 11n60c3 q67040-s4408 11n60c3 11n60c	PDF
Contextual Info: 11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • High peak current capability	Original	spb11n60c3 pg-to263 q67040-s4396 11n60c3	PDF
11n60c3 Abstract: 11N60C SPB11N60C3 Q67040-S4396 SPD06S60 SPP11N60C3 4016A 11N60 Contextual Info: 11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • High peak current capability	Original	spb11n60c3 pg-to263 q67040-s4396 11n60c3 +611gerous 11n60c spd06s60 spp11n60c3 4016a 11n60	PDF
11N60C3 Abstract: 11N60C 11N60 SPP11N60C3 Q67042-S4403 TRANSISTOR SMD MARKING CODE 7A Q67040-S4395 Q67040-S4396 SPB11N60C3 SPI11N60C3 Contextual Info: Preliminary data 11N60C3, 11N60C3 11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax	Original	spp11n60c3 spb11n60c3 spi11n60c3 p-to262-3-1 +9p-to263-3-2 p-to220-3-1 q67040-s4395 11n60c3 11n60c 11n60 q67042-s4403 transistor smd marking code 7a q67040-s4396	PDF
Contextual Info: 11N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • High peak current capability	Original	spw11n60c3 p-to247 q67040-s4418 11n60c3	PDF
Contextual Info: 11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 • Extreme dv/dt rated • High peak current capability	Original	spb11n60c3 p-to263-3-2 q67040-s4396 11n60c3	PDF
Contextual Info: 11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • High peak current capability	Original	spb11n60c3 pg-to263 q67040-s4396 11n60c3	PDF
11n60c3 Abstract: transistor 11n60c3 11N60C SPB11N60C3 SPP11N60C3 Q67040-S4395 SPA11N60C3 SPI11N60C3 11N60 Contextual Info: 11N60C3, 11N60C3 11N60C3, 11N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1	Original	spp11n60c3 spb11n60c3 spi11n60c3 spa11n60c3 +10p-to220-3-31 p-to262-3-1 p-to263-3-2 p-to220-3-1 p-to-220-3-31 11n60c3 transistor 11n60c3 11n60c q67040-s4395 11n60	PDF
11n60c3 Contextual Info: 11N60C3 11N60C3, 11N60C3, 11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO220FP • Periodic avalanche rated PG-TO262 PG-TO220	Original	spp11n60c3 spi11n60c3 spa11n60c3 e8185 +6pg-to220fp pg-to262 pg-to220 p-to220-3-31 pg-to-220-3-31 11n60c3	PDF

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11N60C3 Price and Stock

Infineon Technologies AG SPP11N60C3XKSA1

Infineon Technologies AG SPB11N60C3ATMA1

Infineon Technologies AG SPI11N60C3HKSA1

Infineon Technologies AG SPP11N60C3HKSA1

Infineon Technologies AG SPA11N60C3XKSA1

11N60C3 Datasheets Context Search

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SPD06S60

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Q67040-S4408

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SP000216312

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