11N60 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary 11N60K-MT Power MOSFET 11A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary 11N60K-MT Power MOSFET 11A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance,

11N60CFD

Abstract: SPW11N60CFD 11N60C
Contextual Info: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability

11N60C3

Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3
Contextual Info: Preliminary data 11N60C3, 11N60C3 11N60C3, 11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated

3c90 ferrite

Abstract: 5D-9 ntc 230V AC to 3V DC ic 11N60 RTH 5D-9 AP1661 F1 11N60 1N4148 3C90 MUR460
Contextual Info: BCD Semi Ltd Co. AP1661 Demo Board Manual AP1661 Demo Board Manual Content: 1. Description 2. Specifications 3. Design procedure 4. Schematics of the Demo Board 5. PCB Layout 6. Photo View of the Demo Board 7. BOM 8. Test Result for Typical Performance and Characteristics

11N60S5

Abstract: SPI11N60S5
Contextual Info: 11N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation: G,1

11N60S5 equivalent

Abstract: 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760
Contextual Info: 11N60S5, 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge P-TO262 • Periodic avalanche rated VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated

Contextual Info: 11N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated ID 11 A •=High peak current capability

SPW11N60S5

Abstract: 06161L 11N60S5 equivalent 11N60S5
Contextual Info: 11N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38

11n60c3

Abstract: 11N60 SDP06S60 SPW11N60C3 06161L 11N60C
Contextual Info: 11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.38 Ω

11N60CFD

Abstract: SPI11N60CFD SPP11N60CFD
Contextual Info: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 • Extreme dv/dt rated • High peak current capability

11n60cfd

Abstract: SPW11N60CFD 11N6
Contextual Info: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability

SPA11N60C2

Abstract: AN-TO220-3-31-01 11N60C2 11N60C GPT09301 SDP06S60
Contextual Info: Preliminary data 11N60C2 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated

11N60S5

Abstract: SPW11N60S5
Contextual Info: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

11n60c3

Abstract: transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 E8185
Contextual Info: 11N60C3 11N60C3, 11N60C3, 11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220

11n60cfd

Contextual Info: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability

Contextual Info: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability

Contextual Info: 11N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability

AR1010

Contextual Info: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances

Contextual Info: Preliminary data 11N60C3, 11N60C3 11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature
New revolutionary high voltage technology Product Summary
Worldwide best R DS on in TO 220 VDS @ Tjmax 650 V
Ultra low gate charge

SPD06S60

Abstract: 11N60C3 transistor 11n60c3
Contextual Info: 11N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • High peak current capability

Contextual Info: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

varistor 10K621

Contextual Info: Application Note 1096 High Voltage Green Mode PWM Controller AP3105NA/NV/NL/NR Prepared by Wu Qikun System Engineering Dept. 1. Introduction This application note includes detailed explanation of the IC’s major functions, some considerations about the PCB layout, and methods for reducing the

11n60c2 equivalent

Abstract: 11N60C 11N60C2 LMOS SPW11N60C2 SDP06S60
Contextual Info: 11N60C2 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated