11N6 Search Results

11N6 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
11N60S5		Infineon Technologies	Cool MOS Power Transistor	Original	PDF	338.19KB	12
SL11N65CF		SLKOR		Original	PDF

11N6 Price and Stock

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Novacap ES2211N681K502NTM CAP CER 680PF 250VAC C0G 2211
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ES2211N681K502NTM	Reel	93,000		750	1 - 10 - 100 - 1000 $1.04 10000 $1.00	Buy Now
Master Electronics	ES2211N681K502NTM		1,500			1 - 10 $5.76 100 $5.59 1000 $2.63 10000 $2.63	Buy Now
Micro Commercial Components MSJPF11N65A-BP N-CHANNEL MOSFET,TO-220F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MSJPF11N65A-BP	Tube	4,822		1	1 $2.56 10 $2.56 100 $1.15 1000 $0.92 10000 $0.92	Buy Now
Goford Semiconductor GC11N65D5 N650V, 11A,RD<360M@10V,VTH2.5V~4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	GC11N65D5	Digi-Reel	4,732		1	1 $2.47 10 $1.59 100 $1.08 1000 $0.86 10000 $0.86	Buy Now
	GC11N65D5	Cut Tape	4,732		1	1 $2.47 10 $1.59 100 $1.08 1000 $0.86 10000 $0.86	Buy Now
STMicroelectronics STP11N65M2 MOSFET N-CH 650V 7A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STP11N65M2	Tube	1,763		1	1 $2.38 10 $2.38 100 $1.05 1000 $0.77 10000 $0.67	Buy Now
Avnet Americas	STP11N65M2	Tube		14 Weeks	1,000	1 - 10 - 100 - 1000 $0.76 10000 $0.67	Buy Now
Mouser Electronics	STP11N65M2		889			1 $2.38 10 $1.27 100 $1.05 1000 $0.77 10000 $0.67	Buy Now
STMicroelectronics	STP11N65M2		889		1	1 $2.33 10 $1.25 100 $1.03 1000 $0.82 10000 $0.82	Buy Now
Bristol Electronics	STP11N65M2		990		3	1 - 10 $1.85 100 $0.70 1000 $0.48 10000 $0.48	Buy Now

ComSIT USA	STP11N65M2		2,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	STP11N65M2		2,900	15 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STP11N65M2			16 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi FCB11N60TM MOSFET N-CH 600V 11A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	FCB11N60TM	Digi-Reel	1,017		1	1 $4.40 10 $2.90 100 $2.05 1000 $2.05 10000 $2.05	Buy Now
	FCB11N60TM	Cut Tape	1,017		1	1 $4.40 10 $2.90 100 $2.05 1000 $2.05 10000 $2.05	Buy Now
	FCB11N60TM	Reel	800		800	1 - 10 - 100 - 1000 $1.61 10000 $1.54	Buy Now
Avnet Americas	FCB11N60TM	Reel		14 Weeks	800	1 - 10 - 100 - 1000 $1.76 10000 $1.54	Buy Now
Rochester Electronics	FCB11N60TM		281,326		1	1 - 10 - 100 $1.53 1000 $1.37 10000 $1.29	Buy Now
Richardson RFPD	FCB11N60TM				800	1 - 10 - 100 - 1000 $1.54 10000 $1.54	Buy Now
Avnet Silica	FCB11N60TM			15 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Chip One Stop	FCB11N60TM	Cut Tape	770	0 Weeks, 1 Days	1	1 $3.80 10 $2.84 100 $2.01 1000 $1.61 10000 $1.60	Buy Now
Chip Stock	FCB11N60TM		316			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	FCB11N60TM			16 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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11N6 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary 11N60K-MT Power MOSFET 11A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance,	Original	11N60K-MT 11N60K-MT QW-R502-A99	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary 11N60K-MT Power MOSFET 11A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance,	Original	11N60K-MT 11N60K-MT O-220F2 QW-R502-A99	PDF
11N60CFD Abstract: SPW11N60CFD 11N60C Contextual Info: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability	Original	SPW11N60CFD P-TO247 Q67040-S4619 11N60CFD 11N60CFD SPW11N60CFD 11N60C	PDF
11N60C3 Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3 Contextual Info: Preliminary data 11N60C3, 11N60C3 11N60C3, 11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3	PDF
11N65M5 Abstract: 11n65 STB11N65M5 Contextual Info: 11N65M5, 11N65M5, 11N65M5, 11N65M5, 11N65M5 N-channel 650 V, 0.43 Ω typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB TAB Order codes VDSS @ TJmax RDS on max 2	Original	STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 O-220FP, O-220 STB11N65M5 STD11N65M5 STF11N65M5 11N65M5 11n65	PDF
3c90 ferrite Abstract: 5D-9 ntc 230V AC to 3V DC ic 11N60 RTH 5D-9 AP1661 F1 11N60 1N4148 3C90 MUR460 Contextual Info: BCD Semi Ltd Co. AP1661 Demo Board Manual AP1661 Demo Board Manual Content: 1. Description 2. Specifications 3. Design procedure 4. Schematics of the Demo Board 5. PCB Layout 6. Photo View of the Demo Board 7. BOM 8. Test Result for Typical Performance and Characteristics	Original	AP1661 3c90 ferrite 5D-9 ntc 230V AC to 3V DC ic 11N60 RTH 5D-9 F1 11N60 1N4148 3C90 MUR460	PDF
ntc 5d-9 Abstract: analog delay line schematic 11n65c3 AP3101 pc817c APPLICATION CIRCUITS FR107 SMD pq32 24v Advanced Analog Circuits B20100On AZ431 Contextual Info: BCD Semi Ltd Co. AP3101 Demo Board Part Number: DB-AP3101-120W Seriers Number: V1.0-001 Content: 1. Description 2. Specifications 3. Schematics of the PCB 4. PCB Layout 5. PCB Dimensions 6. Photo View of the Demo Board 7. BOM 8. Test Result PROPRIETARY & CONFIDENTIAL	Original	AP3101 DB-AP3101-120W 5V-265V 200mV ntc 5d-9 analog delay line schematic 11n65c3 pc817c APPLICATION CIRCUITS FR107 SMD pq32 24v Advanced Analog Circuits B20100On AZ431	PDF
11N60S5 Abstract: SPI11N60S5 Contextual Info: 11N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation: G,1	Original	SPI11N60S5 SPPx2N60S5 P-TO262 11N60S5 Q67040-S4250 11N60S5 SPI11N60S5	PDF
11N60S5 equivalent Abstract: 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760 Contextual Info: 11N60S5, 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge P-TO262 • Periodic avalanche rated VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated	Original	SPP11N60S5, SPB11N60S5 SPI11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP11N60S5 Q67040-S4198 11N60S5 equivalent 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760	PDF
Contextual Info: 11N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated ID 11 A •=High peak current capability	Original	SPW11N60C3 P-TO247 Q67040-S4418 11N60C3	PDF
SPW11N60S5 Abstract: 06161L 11N60S5 equivalent 11N60S5 Contextual Info: 11N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38	Original	SPW11N60S5 P-TO247 SPWx2N60S5 Q67040-S4239 11N60S5 SPW11N60S5 06161L 11N60S5 equivalent 11N60S5	PDF
11n60c3 Abstract: 11N60 SDP06S60 SPW11N60C3 06161L 11N60C Contextual Info: 11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.38 Ω	Original	SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 11n60c3 11N60 SDP06S60 SPW11N60C3 06161L 11N60C	PDF
11N60CFD Abstract: SPI11N60CFD SPP11N60CFD Contextual Info: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 • Extreme dv/dt rated • High peak current capability	Original	SPI11N60CFD PG-TO262 11N60CFD PG-TO-262-3-1 11N60CFD SPI11N60CFD SPP11N60CFD	PDF
11n60cfd Abstract: SPW11N60CFD 11N6 Contextual Info: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability	Original	SPW11N60CFD PG-TO247 Q67040-S4619 11N60CFD 11n60cfd SPW11N60CFD 11N6	PDF

11N60S5 Abstract: SPW11N60S5 Contextual Info: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 11N60S5 SPW11N60S5	PDF
STR 6750 Abstract: 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout Contextual Info: Version 1.1 , July 2000 Application Note AN-CoolMOS-06 200W SMPS Demonstration Board Author: Marko Scherf, Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g 200W SMPS Demonstration Board	Original	AN-CoolMOS-06 TDA16888, Room14J1 Room1101 STR 6750 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout	PDF
11n60c3 Abstract: transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 E8185 Contextual Info: 11N60C3 11N60C3, 11N60C3, 11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220	Original	SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 P-TO220-3-31 PG-TO220FP PG-TO262 PG-TO220 PG-TO-220-3-31 11n60c3 transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3	PDF
11n60cfd Contextual Info: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability	Original	SPW11N60CFD PG-TO247 SPW11N60CFD Q67040-S4619 11N60CFD 11n60cfd	PDF
Contextual Info: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability	Original	SPP11N60CFD PG-TO220-3-1 SPP11N60CFD 11N60CFD PG-TO220-3-1 Q67040-S4618	PDF
Contextual Info: 11N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability	Original	SPW11N60C3 P-TO247 Q67040-S4418 11N60C3	PDF
AR1010 Contextual Info: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 AR1010	PDF
Contextual Info: Preliminary data 11N60C3, 11N60C3 11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature New revolutionary high voltage technology Product Summary Worldwide best R DS on in TO 220 VDS @ Tjmax 650 V Ultra low gate charge	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 P-TO220-3-1	PDF
SPD06S60 Abstract: 11N60C3 transistor 11n60c3 Contextual Info: 11N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • High peak current capability	Original	SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 SPD06S60 11N60C3 transistor 11n60c3	PDF
Contextual Info: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW11N60S5 P-TO247 Q67040-S4239 11N60S5	PDF

11N6 Search Results

11N6 Datasheets (2)

11N6 Price and Stock

Novacap ES2211N681K502NTM

Micro Commercial Components MSJPF11N65A-BP

Goford Semiconductor GC11N65D5

STMicroelectronics STP11N65M2

onsemi FCB11N60TM

11N6 Datasheets Context Search

11N60CFD

11N60C3

11N65M5

3c90 ferrite

ntc 5d-9

11N60S5

11N60S5 equivalent

SPW11N60S5

11n60c3

11N60CFD

11n60cfd

11N60S5

STR 6750

11n60c3

11n60cfd

AR1010

SPD06S60