11N6 Search Results
11N6 Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 11N60S5 |
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Cool MOS Power Transistor | Original | 338.19KB | 12 | ||
CWS11N65AX
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Wuhan Xinyuan Semiconductor Co Ltd | 650V N-Channel Super Junction MOSFET with 360 mOhm RDS(on) and 11A continuous drain current, available in TO-252, TO-220, TO-220F, and TO-263-2L packages for high-efficiency power applications. | Original | ||||
CWS11N65AC
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Wuhan Xinyuan Semiconductor Co Ltd | 650V N-Channel Super Junction MOSFET with 360 mOhm RDS(on) and 11A continuous drain current, available in TO-252, TO-220, TO-220F, and TO-263-2L packages for high-efficiency power applications. | Original | ||||
SL11N65CF
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SLKOR | Original | |||||
CWS11N65AF
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Wuhan Xinyuan Semiconductor Co Ltd | 650V N-Channel Super Junction MOSFET with 360 mOhm RDS(on) and 11A continuous drain current, available in TO-252, TO-220, TO-220F, and TO-263-2L packages for high-efficiency power applications. | Original |
11N6 Price and Stock
STMicroelectronics STL11N65M5MOSFET N-CH 650V 8.5A POWERFLAT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STL11N65M5 | Digi-Reel | 3,855 | 1 |
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STL11N65M5 | Tape & Reel | 15,000 | 14 Weeks | 3,000 |
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STL11N65M5 | 2,084 |
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STL11N65M5 | Tape & Reel | 15,000 | 3,000 |
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STL11N65M5 | 2,084 | 1 |
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STL11N65M5 | 3,000 | 15 Weeks | 3,000 |
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STL11N65M5 | 15 Weeks | 3,000 |
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Infineon Technologies AG SPB11N60C3ATMA1MOSFET N-CH 650V 11A TO263-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SPB11N60C3ATMA1 | Cut Tape | 1,957 | 1 |
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SPB11N60C3ATMA1 | Bulk | 458 | 1 |
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SPB11N60C3ATMA1 | 8,350 |
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Get Quote | |||||||
STMicroelectronics STD11N60DM2MOSFET N-CH 650V 10A DPAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STD11N60DM2 | Cut Tape | 1,288 | 1 |
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STD11N60DM2 | 2,205 |
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STD11N60DM2 | 2,205 | 1 |
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STD11N60DM2 | 32,500 | 17 Weeks | 2,500 |
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STD11N60DM2 | 17 Weeks | 2,500 |
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STMicroelectronics STF11N60M2-EPMOSFET N-CH 600V 7.5A TO220FP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STF11N60M2-EP | Tube | 978 | 1 |
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STF11N60M2-EP | 889 | 1 |
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STF11N60M2-EP | 1 |
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STF11N60M2-EP | 2,000 | 15 Weeks | 50 |
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STF11N60M2-EP | 15 Weeks | 50 |
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onsemi FCPF11N60FMOSFET N-CH 600V 11A TO220F |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FCPF11N60F | Tube | 948 | 1 |
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FCPF11N60F | 849 |
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FCPF11N60F | 257 | 1 |
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FCPF11N60F | 1,000 |
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FCPF11N60F | 950 | 17 Weeks | 50 |
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FCPF11N60F | 21,922 |
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FCPF11N60F | 18 Weeks | 50 |
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FCPF11N60F | 7,000 |
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11N6 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary 11N60K-MT Power MOSFET 11A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, |
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11N60K-MT 11N60K-MT QW-R502-A99 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary 11N60K-MT Power MOSFET 11A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, |
Original |
11N60K-MT 11N60K-MT O-220F2 QW-R502-A99 | |
11N60CFD
Abstract: SPW11N60CFD 11N60C
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Original |
SPW11N60CFD P-TO247 Q67040-S4619 11N60CFD 11N60CFD SPW11N60CFD 11N60C | |
11N60C3
Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3
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SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3 | |
11N65M5
Abstract: 11n65 STB11N65M5
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STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 O-220FP, O-220 STB11N65M5 STD11N65M5 STF11N65M5 11N65M5 11n65 | |
3c90 ferrite
Abstract: 5D-9 ntc 230V AC to 3V DC ic 11N60 RTH 5D-9 AP1661 F1 11N60 1N4148 3C90 MUR460
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AP1661 3c90 ferrite 5D-9 ntc 230V AC to 3V DC ic 11N60 RTH 5D-9 F1 11N60 1N4148 3C90 MUR460 | |
ntc 5d-9
Abstract: analog delay line schematic 11n65c3 AP3101 pc817c APPLICATION CIRCUITS FR107 SMD pq32 24v Advanced Analog Circuits B20100On AZ431
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AP3101 DB-AP3101-120W 5V-265V 200mV ntc 5d-9 analog delay line schematic 11n65c3 pc817c APPLICATION CIRCUITS FR107 SMD pq32 24v Advanced Analog Circuits B20100On AZ431 | |
11N60S5
Abstract: SPI11N60S5
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SPI11N60S5 SPPx2N60S5 P-TO262 11N60S5 Q67040-S4250 11N60S5 SPI11N60S5 | |
11N60S5 equivalent
Abstract: 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760
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SPP11N60S5, SPB11N60S5 SPI11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP11N60S5 Q67040-S4198 11N60S5 equivalent 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760 | |
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Contextual Info: 11N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated ID 11 A •=High peak current capability |
Original |
SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 | |
SPW11N60S5
Abstract: 06161L 11N60S5 equivalent 11N60S5
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Original |
SPW11N60S5 P-TO247 SPWx2N60S5 Q67040-S4239 11N60S5 SPW11N60S5 06161L 11N60S5 equivalent 11N60S5 | |
11n60c3
Abstract: 11N60 SDP06S60 SPW11N60C3 06161L 11N60C
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SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 11n60c3 11N60 SDP06S60 SPW11N60C3 06161L 11N60C | |
11N60CFD
Abstract: SPI11N60CFD SPP11N60CFD
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SPI11N60CFD PG-TO262 11N60CFD PG-TO-262-3-1 11N60CFD SPI11N60CFD SPP11N60CFD | |
11n60cfd
Abstract: SPW11N60CFD 11N6
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SPW11N60CFD PG-TO247 Q67040-S4619 11N60CFD 11n60cfd SPW11N60CFD 11N6 | |
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11N60S5
Abstract: SPW11N60S5
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SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 11N60S5 SPW11N60S5 | |
STR 6750
Abstract: 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout
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AN-CoolMOS-06 TDA16888, Room14J1 Room1101 STR 6750 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout | |
11n60c3
Abstract: transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 E8185
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SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 P-TO220-3-31 PG-TO220FP PG-TO262 PG-TO220 PG-TO-220-3-31 11n60c3 transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 | |
11n60cfdContextual Info: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability |
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SPW11N60CFD PG-TO247 SPW11N60CFD Q67040-S4619 11N60CFD 11n60cfd | |
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Contextual Info: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability |
Original |
SPP11N60CFD PG-TO220-3-1 SPP11N60CFD 11N60CFD PG-TO220-3-1 Q67040-S4618 | |
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Contextual Info: 11N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability |
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SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 | |
AR1010Contextual Info: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances |
Original |
SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 AR1010 | |
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Contextual Info: Preliminary data 11N60C3, 11N60C3 11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature New revolutionary high voltage technology Product Summary Worldwide best R DS on in TO 220 VDS @ Tjmax 650 V Ultra low gate charge |
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SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 P-TO220-3-1 | |
SPD06S60
Abstract: 11N60C3 transistor 11n60c3
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SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 SPD06S60 11N60C3 transistor 11n60c3 | |
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Contextual Info: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances |
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SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 | |