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    STMicroelectronics STD11N65M2

    - Product that comes on tape, but is not reeled (Alt: 40Y2594)
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    Avnet Americas () STD11N65M2 Ammo Pack 1
    • 1 $2.32
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    STD11N65M2 Tape & Reel 36 Weeks 2,500
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    Newark () STD11N65M2 Cut Tape 1,490 1
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    STD11N65M2 Tape & Reel 1,490 100
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    TME STD11N65M2 47,500 2,500
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    Avnet Silica STD11N65M2 27 Weeks 2,500
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    EBV Elektronik STD11N65M2 47,500 27 Weeks 2,500
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    STMicroelectronics STF11N65M5

    - Bulk (Alt: 45AC7554)
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    Avnet Americas () STF11N65M5 Bulk 1
    • 1 $2.72
    • 10 $1.87
    • 100 $1.38
    • 1000 $1.16
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    STF11N65M5 Tube 24 Weeks 1,000
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    Newark STF11N65M5 Bulk 224 1
    • 1 $2.72
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    • 100 $1.38
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    Bristol Electronics STF11N65M5 1,890 1
    • 1 $2.04
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    TME STF11N65M5 20 1
    • 1 $2.10
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    Avnet Silica STF11N65M5 2,900 25 Weeks 50
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    EBV Elektronik STF11N65M5 25 Weeks 50
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    Vyrian STF11N65M5 8,630
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    Vishay Intertechnologies SIHH11N65E-T1-GE3

    - Tape and Reel (Alt: SIHH11N65E-T1-GE3)
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    Avnet Americas SIHH11N65E-T1-GE3 Tape & Reel 31 Weeks 3,000
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    Newark () SIHH11N65E-T1-GE3 Cut Tape 1
    • 1 $6.84
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    • 100 $3.79
    • 1000 $3.21
    • 10000 $3.08
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    SIHH11N65E-T1-GE3 Tape & Reel 100
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    SIHH11N65E-T1-GE3 Tape & Reel 3,000
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    TTI SIHH11N65E-T1-GE3 Reel 3,000
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    Component Electronics, Inc SIHH11N65E-T1-GE3 307
    • 1 $3.85
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    • 100 $2.88
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    EBV Elektronik SIHH11N65E-T1-GE3 39 Weeks 3,000
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    Infineon Technologies AG SPA11N65C3XKSA1

    Trans MOSFET N-CH 650V 11A 3-Pin TO-220FP Tube - Rail/Tube (Alt: SPA11N65C3XKSA1)
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    Avnet Americas SPA11N65C3XKSA1 Tube 11 Weeks 500
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    Newark SPA11N65C3XKSA1 Bulk 84 1
    • 1 $3.42
    • 10 $2.22
    • 100 $1.54
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    EBV Elektronik SPA11N65C3XKSA1 12 Weeks 500
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    Vyrian SPA11N65C3XKSA1 11,968
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    STMicroelectronics STL11N65M5

    - Tape and Reel (Alt: STL11N65M5)
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    Avnet Americas STL11N65M5 Tape & Reel 36 Weeks 3,000
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    TME STL11N65M5 1
    • 1 $2.65
    • 10 $1.76
    • 100 $1.35
    • 1000 $1.29
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    Avnet Silica STL11N65M5 3,000 25 Weeks 3,000
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    EBV Elektronik STL11N65M5 25 Weeks 3,000
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    11N65 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    11N65M5

    Abstract: 11n65 STB11N65M5
    Contextual Info: 11N65M5, 11N65M5, 11N65M5, 11N65M5, 11N65M5 N-channel 650 V, 0.43 Ω typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB TAB Order codes VDSS @ TJmax RDS on max 2


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    stb11n65m5std11n65m5stf11n65m5stp11n65m5+5stu11n65m5o-220fpo-22011n65m511n65 PDF

    ntc 5d-9

    Abstract: analog delay line schematic 11n65c3 AP3101 pc817c APPLICATION CIRCUITS FR107 SMD pq32 24v Advanced Analog Circuits B20100On AZ431
    Contextual Info: BCD Semi Ltd Co. AP3101 Demo Board Part Number: DB-AP3101-120W Seriers Number: V1.0-001 Content: 1. Description 2. Specifications 3. Schematics of the PCB 4. PCB Layout 5. PCB Dimensions 6. Photo View of the Demo Board 7. BOM 8. Test Result PROPRIETARY & CONFIDENTIAL


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    ap3101db-ap3101-120w5v-265v200mv+9ntc 5d-9analog delay line schematic11n65c3pc817c application circuitsfr107 smdpq32 24vadvanced analog circuitsb20100onaz431 PDF

    11N65M5

    Abstract: STB11N65M5 STF11N65M5 stf11n65 11n65 STP11N65M5 STD11N65M5 STMicroelectronics marking code date diode
    Contextual Info: 11N65M5, 11N65M5 11N65M5, 11N65M5 N-channel 650 V, 0.43 Ω, 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220 packages Preliminary data Features TAB TAB Order code VDSS @ TJmax RDS on max 710 V < 0.48 Ω 2 ID 11N65M5 DPAK D2PAK


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    stb11n65m5std11n65m5stf11n65m5stp11n65m5+6o-220fpo-22011n65m5stf11n6511n65stmicroelectronics marking code date diode PDF

    90W ac adapter schematic

    Abstract: npn 13001 90w flyback 90W laptop adapter 90W ac power adapter schematic TRIAC 13001 1W ZENER DIODE 90V AP1661 AP4310 AP3101 AP1661 WT210
    Contextual Info: BCD Semi Ltd Co. 90W AP3101+AP1661 Demo Board Manual Content: 1. Description 2. Specifications 3. Schematics of the PCB 4. PCB Layout 5. Photo View of the Demo Board 6. PCB Dimensions 7. BOM 8. Test Result PROPRIETARY & CONFIDENTIAL ADVANCED ANALOG CIRCUITS CORPORATION


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    ap3101ap1661100mv300mv+1090w ac adapter schematicnpn 1300190w flyback90w laptop adapter90w ac power adapter schematictriac 130011w zener diode 90vap1661 ap4310ap3101 ap1661wt210 PDF

    11N65C3

    Abstract: 11N65C 11n65 SPA11N65C3 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 7A SP000216318 SPP11N65C3 SPI11N65C3 11n6
    Contextual Info: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated


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    spp11n65c3spa11n65c3spi11n65c3pg-to262+10pg-to220fppg-to220q67040-s455711n65c311n65c11n65transistor smd marking codetransistor smd marking code 7asp00021631811n6 PDF

    11N65C3

    Contextual Info: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated


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    spp11n65c3spa11n65c3spi11n65c3pg-to262+4pg-to220fppg-to220q67040-s455711n65c3 PDF

    11N65C3

    Abstract: 11n65 11N65C SPP11N65C3 Q67040-S4554 MIL-STD-750-1038 Q67040-S4561 AN-TO220-3-31-01 TRANSISTOR SMD MARKING CODE 7A SPA11N65C3
    Contextual Info: 11N65C3, 11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 650 V RDS on 0.38 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO262-3-1 P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated


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    spp11n65c3spa11n65c3spi11n65c3p-to262-3-1+11p-to220-3-31p-to220-3-1q67040-s455711n65c311n6511n65cq67040-s4554mil-std-750-1038q67040-s4561an-to220-3-31-01transistor smd marking code 7a PDF

    11n65

    Contextual Info: Preliminary Datasheet POWER FACTOR CORRECTION CONTROLLER General Description Features The AP1661 is an active power factor control IC which is designed mainly for use as pre-converter in electronic ballast, AC-DC adapters and off-line SMPS applications. •


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    ap1661600ma800ma11n65 PDF

    Contextual Info: 11N65C3, 11N65C3 11N65C3 Preliminary data Cool MOS Power Transistor Feature VDS @ Tjmax 820 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO262-3-1 P-TO220-3-31


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    spp11n65c3spa11n65c3spi11n65c3p-to262-3-1+4p-to220-3-31p-to220-3-1q67040-s455711n65c3 PDF

    11n65

    Abstract: Q67040-S4554 Q67040-S4557 11N65C3 SPP11N65C3
    Contextual Info: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature VDS @ Tjmax 820 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262-3-1 PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated


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    spp11n65c3spa11n65c3spi11n65c3pg-to262-3-1+6pg-to220-3-31pg-to220-3-111n65c311n65q67040-s4554q67040-s4557 PDF

    11N65C3

    Abstract: 11n65
    Contextual Info: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature VDS @ Tjmax 820 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262-3-1 PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated


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    spp11n65c3spa11n65c3spi11n65c3pg-to262-3-1+4pg-to220-3-31pg-to220-3-111n65c311n65 PDF

    Contextual Info: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO262 • Periodic avalanche rated V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated


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    spp11n65c3spa11n65c3spi11n65c3pg-to262+4pg-to220fppg-to220q67040-s455711n65c3 PDF

    ap1661p

    Abstract: 1661M-G1 11n65 11n65c3 AP1661 AP1661M-G1 11N65C 1661m AP1661M-E1 AP1661P-G1
    Contextual Info: Data Sheet POWER FACTOR CORRECTION CONTROLLER General Description Features The AP1661 is an active power factor control IC which is designed mainly for use as pre-converter in electronic ballast, AC-DC adapters and off-line SMPS applications. • · · · The AP1661 includes an internal start-up timer for


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    ap1661600ma800maap1661p+81661m-g111n6511n65c3ap1661m-g111n65c1661map1661m-e1ap1661p-g1 PDF

    1N6528

    Abstract: M25UFG RA641 58A2 1N6535 RA644 11n65 RM109 M50FG RM117
    Contextual Info: T " 0 3 - 0 9 T ' O S - f t I INCH-PQUND I MI L -S-19500/577 5 Ap r i l 1989 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE TYPES 1N6528 THROUGH 1N6535 JANTX, JANTXV, AND JANS This specification is approved for use by all Depart­


    OCR Scan
    mil-s-19500/5771n65281n6535mil-s-19500+14ra642ra645rm121rm131m60fgm60ufgm25ufgra64158a2ra64411n65rm109m50fgrm117 PDF

    11N65M5

    Contextual Info: STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N N-channel 650 V, 0.425 Ω typ., 11 A MDmesh II Power MOSFET in DPAK, TO-220FP, I²PAKFP and TO-220 packages Datasheet — production data Features TAB Order codes RDS on max VDSS @ TJmax 3 ID 1 11N65M5


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    std11nm65nstf11nm65nstfi11nm65nstp11nm65n+6o-220fpo-220stf11n65m5stfi11n65m5std11n65m511n65m5 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


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    b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819 PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


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    b192-h6780-g9-x-7600d-81669vdsl5100i-evdsl6100i-e+10bcm 43362a0565c23352a280zc1740 bipolar transistortransistor a1267a1273 transistorc2335 r2b05652b265 PDF

    AP1661

    Abstract: 11N65C3 cs 9110 d2 power factor correction boost topology 11N65C mosfet power totem pole CIRCUIT 1N4148 MUR460 mosfet triggering circuit power mosfet triggering circuit
    Contextual Info: Application Note 1006 Design of Power Factor Correction Circuit Using AP1661 Prepared by Zhu Shihai System Engineering Department 1. Introduction 2. Product Features The AP1661 is an active power factor control IC which is designed mainly for use as a pre-converter in


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    ap1661600ma800ma11n65c3+8cs 9110 d2power factor correction boost topology11n65cmosfet power totem pole circuit1n4148mur460mosfet triggering circuitpower mosfet triggering circuit PDF

    AP1661

    Abstract: AP1661MTR-E1 AP1661M-E1 11N65C3 1661m 1661M-G1 schematic SMPS 24V 2.5a ap1661p 11n65 8 dip 6200 smps ic
    Contextual Info: Data Sheet POWER FACTOR CORRECTION CONTROLLER General Description Features The AP1661 is an active power factor control IC which is designed mainly for use as pre-converter in electronic ballast, AC-DC adapters and off-line SMPS applications. • · · · The AP1661 includes an internal start-up timer for


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    ap1661600ma800maap1661mtr-e1+8ap1661m-e111n65c31661m1661m-g1schematic smps 24v 2.5aap1661p11n658 dip 6200 smps ic PDF

    11N65C3

    Abstract: 11N65C SPI11N65C3 SPP11N65C3 SP000216318 11n65
    Contextual Info: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated


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    spp11n65c3spa11n65c3spi11n65c3pg-to262+6pg-to220-3-31pg-to22011n65c311n65csp00021631811n65 PDF

    11n65

    Abstract: 11N65C3 11N65C SPA11N65C3
    Contextual Info: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262-3 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated


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    spp11n65c3spa11n65c3spi11n65c3pg-to262-3+5pg-to220-3-31pg-to220-3-111n65c311n6511n65c PDF

    11N65C3

    Abstract: SPP11N65C3 11n65 A O TRANSISTOR SMD MARKING CODE SPA11N65C3 11N65C Q67040-S4561
    Contextual Info: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262-3-1 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated


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    spp11n65c3spa11n65c3spi11n65c3pg-to262-3-1+7pg-to220-3-31pg-to220-3-111n65c311n65a o transistor smd marking code11n65cq67040-s4561 PDF

    11N65C3

    Abstract: SPA11N65C3 SPI11N65C3 SPP11N65C3
    Contextual Info: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated


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    spp11n65c3spa11n65c3spi11n65c3pg-to262+4pg-to220fppg-to220q67040-s455711n65c3 PDF

    11N65K3

    Abstract: 11n65 STF11N65K3
    Contextual Info: 11N65K3 N-channel 650 V, 0.765 Ω, 11 A, TO-220FP SuperMESH3 Power MOSFET Features Type VDSS RDS on max ID Ptot 11N65K3 650 V < 0.85 Ω 11 A 35 W • 100% avalanche tested ■ Extremely high dv/dt capability 3 1 ■ Gate charge minimized ■ Very low intrinsic capacitances


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    stf11n65k3o-220fp11n65k311n65 PDF