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Infineon Technologies AG


Infineon Technologies AG SPB17N80C3ATMA1 MOSFET N-CH 800V 17A TO263-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SPB17N80C3ATMA1	Tape & Reel	7,951		1,000	1 - 10 - 100 - 1000 $1.99 10000 $1.99	Buy Now
	SPB17N80C3ATMA1	Digi-Reel	7,951		1	1 $5.09 10 $3.37 100 $2.40 1000 $2.10 10000 $2.10	Buy Now
	SPB17N80C3ATMA1	Cut Tape	7,951		1	1 $5.09 10 $3.37 100 $2.40 1000 $2.10 10000 $2.10	Buy Now
Avnet Americas	SPB17N80C3ATMA1	Tape & Reel	17,000	10 Weeks	1,000	1 - 10 - 100 - 1000 $1.72 10000 $1.66	Buy Now
Mouser Electronics ()	SPB17N80C3ATMA1		1,113			1 $5.09 10 $3.37 100 $2.46 1000 $1.92 10000 $1.90	Buy Now
	SPB17N80C3ATMA1		863			1 $5.16 10 $3.43 100 $2.57 1000 $2.00 10000 $1.87	Buy Now
Newark ()	SPB17N80C3ATMA1	Tape & Reel	2,121		100	1 - 10 - 100 $2.83 1000 $2.83 10000 $2.83	Buy Now
	SPB17N80C3ATMA1	Cut Tape	2,121		1	1 $5.20 10 $3.43 100 $2.83 1000 $2.83 10000 $2.83	Buy Now
	SPB17N80C3ATMA1	Tape & Reel			1,000	1 - 10 - 100 - 1000 $2.16 10000 $2.16	Buy Now
Bristol Electronics	SPB17N80C3ATMA1		38			1 - 10 - 100 - 1000 - 10000 -	Get Quote

TME	SPB17N80C3ATMA1				1,000	1 - 10 - 100 - 1000 $2.19 10000 $2.19	Get Quote
EBV Elektronik	SPB17N80C3ATMA1		8,000	11 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SPA17N80C3XKSA1 MOSFET N-CH 800V 17A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPA17N80C3XKSA1	Tube	998		1	1 $5.39 10 $5.39 100 $2.55 1000 $1.97 10000 $1.85	Buy Now
Avnet Americas	SPA17N80C3XKSA1	Tube		13 Weeks	500	1 - 10 - 100 - 1000 $1.70 10000 $1.62	Buy Now
Mouser Electronics ()	SPA17N80C3XKSA1		472			1 $5.32 10 $3.16 100 $2.61 1000 $2.05 10000 $2.05	Buy Now
	SPA17N80C3XKSA1		470			1 $5.40 10 $3.28 100 $2.74 1000 $2.05 10000 $2.00	Buy Now
Newark	SPA17N80C3XKSA1	Bulk	422		1	1 $5.33 10 $2.96 100 $2.69 1000 $2.22 10000 $2.22	Buy Now
Rochester Electronics	SPA17N80C3XKSA1		2,508		1	1 - 10 - 100 $1.85 1000 $1.66 10000 $1.56	Buy Now

TME	SPA17N80C3XKSA1				50	1 - 10 - 100 $2.21 1000 $2.21 10000 $2.21	Get Quote
Rutronik	SPA17N80C3XKSA1	Tube	450		1	1 - 10 - 100 - 1000 $2.10 10000 $1.71	Buy Now
EBV Elektronik	SPA17N80C3XKSA1		3,000	14 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	SPA17N80C3XKSA1		9,606			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPA17N80C3XKSA1		18,500			1 - 10 - 100 $2.42 1000 $2.10 10000 $2.10	Buy Now
Infineon Technologies AG SPP17N80C3XKSA1 MOSFET N-CH 800V 17A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP17N80C3XKSA1	Tube	671		1	1 $5.60 10 $5.60 100 $2.66 1000 $2.06 10000 $1.95	Buy Now
Avnet Americas	SPP17N80C3XKSA1	Tube		21 Weeks	50	1 - 10 - 100 $1.12 1000 $1.08 10000 $1.08	Buy Now
Mouser Electronics ()	SPP17N80C3XKSA1		292			1 $5.72 10 $3.30 100 $2.62 1000 $2.15 10000 $2.15	Buy Now
	SPP17N80C3XKSA1		287			1 $5.87 10 $3.85 100 $2.84 1000 $2.25 10000 $2.25	Buy Now
Newark	SPP17N80C3XKSA1	Bulk	687		1	1 $4.75 10 $3.71 100 $3.00 1000 $2.66 10000 $2.66	Buy Now
Bristol Electronics	SPP17N80C3XKSA1		13			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Rochester Electronics	SPP17N80C3XKSA1		1,771		1	1 - 10 - 100 $1.95 1000 $1.74 10000 $1.64	Buy Now
TME	SPP17N80C3XKSA1				50	1 - 10 - 100 $1.35 1000 $1.35 10000 $1.35	Get Quote
EBV Elektronik	SPP17N80C3XKSA1			22 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Maritex	SPP17N80C3XKSA1		140		1	1 $3.09 10 $2.51 100 $1.86 1000 $1.57 10000 $1.57	Buy Now
Win Source Electronics	SPP17N80C3XKSA1		20,000			1 - 10 $9.34 100 $7.27 1000 $7.27 10000 $7.27	Buy Now
Infineon Technologies AG SPW17N80C3A MOSFET N-CH 800V 17A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPW17N80C3A	Tube			240	1 - 10 - 100 - 1000 $3.22 10000 $3.22	Buy Now
Vyrian	SPW17N80C3A		3,965			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPW17N80C3FKSA1 Trans MOSFET N-CH 800V 17A 3-Pin TO-247 Tube - Rail/Tube (Alt: SPW17N80C3FKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SPW17N80C3FKSA1	Tube	210	8 Weeks	1	1 $1.77 10 $1.70 100 $1.68 1000 $1.68 10000 $1.68	Buy Now
Mouser Electronics ()	SPW17N80C3FKSA1		54			1 $5.73 10 $3.38 100 $2.79 1000 $2.61 10000 $2.51	Buy Now
	SPW17N80C3FKSA1		44			1 $6.83 10 $4.48 100 $3.30 1000 $2.92 10000 $2.62	Buy Now
Newark ()	SPW17N80C3FKSA1	Bulk	108		1	1 $6.52 10 $3.59 100 $2.97 1000 $2.71 10000 $2.71	Buy Now
	SPW17N80C3FKSA1	Bulk			1	1 $5.22 10 $5.12 100 $2.50 1000 $2.48 10000 $2.48	Buy Now
Rochester Electronics	SPW17N80C3FKSA1		6,328		1	1 - 10 - 100 $2.27 1000 $2.03 10000 $1.91	Buy Now
TME	SPW17N80C3FKSA1				30	1 - 10 - 100 $2.56 1000 $2.56 10000 $2.56	Get Quote

Rutronik	SPW17N80C3FKSA1	Tube	3,240		240	1 - 10 - 100 - 1000 $2.08 10000 $2.00	Buy Now
EBV Elektronik	SPW17N80C3FKSA1			9 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPW17N80C3FKSA1		30,000			1 - 10 - 100 $1.89 1000 $1.58 10000 $1.58	Buy Now

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17N80C3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
17N80C3 Abstract: 17n80c 17n80 SPP17N80C3 SPB17N80C3 Contextual Info: 17N80C3 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature New revolutionary high voltage technology Product Summary Worldwide best R DS on in TO 220 VDS 800 V Ultra low gate charge RDS(on) 290 m Periodic avalanche rated	Original	SPP17N80C3 SPB17N80C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4353 17N80C3 17N80C3 17n80c 17n80 SPP17N80C3 SPB17N80C3	PDF
17n80c3 Abstract: SPA17 17n80 Contextual Info: 17N80C3 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220-3-1 • Periodic avalanche rated	Original	SPP17N80C3 SPA17N80C3 PG-TO-220-3-31: P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 SPA17N80C3 17N80C3 17N80C3 SPA17 17n80	PDF
17n80c3 Abstract: 17n80 spa17n80c3 17N80C SPB17N80C3 UJ14 Q67040-S4441 Contextual Info: Final data 17N80C3, 17N80C3 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 • Ultra low gate charge P-TO220-3-31 VDS 800 V RDS(on) 0.29 Ω ID 17 A P-TO263-3-2 P-TO220-3-1	Original	SPP17N80C3, SPB17N80C3 SPA17N80C3 P-TO-220-3-31: SPP17N80C3 SPA17N80C3 P-TO220-3-1 P-TO263-3-2 Q67040-S4353 17n80c3 17n80 17N80C UJ14 Q67040-S4441	PDF
MOSFET 17N80c3 Abstract: 17n80 Contextual Info: 17N80C3 CoolMOS Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPP17N80C3 PG-TO220-3 17N80C3 MOSFET 17N80c3 17n80	PDF
MOSFET 17N80c3 Abstract: smd transistor marking d10 17n80c3 17N80C3 mosfet SPB17N80C3 640 smd transistor marking smd G47 Contextual Info: 17N80C3 CoolMOS Power Transistor Product Summary Features • new revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 91 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPB17N80C3 PG-TO263 17N80C3 MOSFET 17N80c3 smd transistor marking d10 17n80c3 17N80C3 mosfet SPB17N80C3 640 smd transistor marking smd G47	PDF
Contextual Info: 17N80C3 CoolMOS Power Transistor Product Summary Features • new revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 91 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPB17N80C3 PG-TO263 17N80C3	PDF
17n80 Abstract: 17n80c3 Q67040-S4359 to247 f SPW17N80C3 17n80c Contextual Info: 17N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated	Original	SPW17N80C3 P-TO247 Q67040-S4359 17N80C3 17n80 17n80c3 Q67040-S4359 to247 f SPW17N80C3 17n80c	PDF
17N80C3 Abstract: SPP17N80C3 17n80 17n80c SPB17N80C3 Contextual Info: 17N80C3 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 800 V RDS(on) 290 mΩ	Original	SPP17N80C3 SPB17N80C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4353 17N80C3 17N80C3 SPP17N80C3 17n80 17n80c SPB17N80C3	PDF
17n80 Abstract: 17n80c SPW17N80C3A 17N80C3 Contextual Info: 17N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPW17N80C3 P-TO247 Q67040-S4359 17N80C3 17n80 17n80c SPW17N80C3A 17N80C3	PDF
17n80c3 Abstract: 17n80 Q67040-s4354 17n80c Q67040-S4441 Q67040-S4353 spa17n80c3 Contextual Info: Preliminary data 17N80C3, 17N80C3 17N80C3 Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge ID • Periodic avalanche rated	Original	SPP17N80C3, SPB17N80C3 SPA17N80C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP17N80C3 17n80c3 17n80 Q67040-s4354 17n80c Q67040-S4441 Q67040-S4353 spa17n80c3	PDF
Contextual Info: 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance	Original	SPB17N80C3 PG-TO263 SPB17N80C3 Q67040-S4354 17N80C3	PDF
17N80C3 Contextual Info: 17N80C3 17N80C3 Cool MOS Power Transistor Feature VDS 800 V RDS on 0.29 Ω ID 17 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 PG-TO220-3-31 PG-TO220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPP17N80C3 SPA17N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4353 17N80C3 17N80C3	PDF
17n80c3 Contextual Info: 17N80C3 CoolMOS Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPP17N80C3 PG-TO220-3 17N80C3 17n80c3	PDF
17n80c3 Abstract: UJ14 Contextual Info: 17N80C3 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated	Original	SPP17N80C3 SPA17N80C3 PG-TO-220-3-31: P-TO220-3-31 PG-TO220-3-31 PG-TO220 SPA17N80C3 Q67040-S4353 17n80c3 UJ14	PDF

SPW17N80C3 INFINEON Abstract: SPW17N80C3 17n80c Contextual Info: 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 247 • Ultra low gate charge VDS 800 V RDS(on) 0.29 Ω •=Periodic avalanche rated	Original	SPW17N80C3 P-TO247 Q67040-S4359 17N80C3 SPW17N80C3 INFINEON SPW17N80C3 17n80c	PDF
17n80 Contextual Info: 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type	Original	SPW17N80C3 PG-TO247 SPW17N80C3 Q67040-S4359 17N80C3 17n80	PDF
MOSFET 17N80c3 Abstract: 17n80c3 17n80c 17n80 JESD22 SPW17N80C3 Contextual Info: 17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPW17N80C3 PG-TO247-3 17N80C3 MOSFET 17N80c3 17n80c3 17n80c 17n80 JESD22 SPW17N80C3	PDF
17n80c3 Contextual Info: Final data 17N80C3, 17N80C3 17N80C3 Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge ID • Periodic avalanche rated	Original	SPP17N80C3, SPB17N80C3 SPA17N80C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP17N80C3 Q67040-S4353 17n80c3	PDF
MOSFET 17N80c3 Abstract: Diode S17 DS800 PG-TO-247-3 SPW17N80C3 17n80c Contextual Info: 17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPW17N80C3 PG-TO247-3 17N80C3 MOSFET 17N80c3 Diode S17 DS800 PG-TO-247-3 SPW17N80C3 17n80c	PDF
17n80c3 Abstract: 17n80 SPA17N80C3 17n80c diode 400V 4A TO220 HEATSINK DATASHEET PG-TO220 SMD BR 17 PG-TO220-3-31 SPP17N80C3 Contextual Info: 17N80C3 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated	Original	SPP17N80C3 SPA17N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4353 17N80C3 17n80c3 17n80 SPA17N80C3 17n80c diode 400V 4A TO220 HEATSINK DATASHEET PG-TO220 SMD BR 17 SPP17N80C3	PDF
MOSFET 17N80c3 Abstract: 17n80 17n80c3 17n80c MOSFET 17N80c3 Data sheet JESD22 SPW17N80C3 spw17n80 PG-TO247-3 Contextual Info: 17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPW17N80C3 PG-TO247-3 17N80C3 009-134-A O-247 PG-TO247-3 MOSFET 17N80c3 17n80 17n80c3 17n80c MOSFET 17N80c3 Data sheet JESD22 SPW17N80C3 spw17n80	PDF
spa17n80c3 Abstract: 17n80c3 Contextual Info: 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 800 V RDS(on) 0.29 Ω •=Periodic avalanche rated	Original	SPA17N80C3 P-TO220-3-31 17N80C3 P-TO220-3-31 Q67040-S4441 spa17n80c3 17n80c3	PDF
17n80c3 Contextual Info: 17N80C3 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 800 V RDS(on) 0.29 Ω	Original	SPP17N80C3 SPB17N80C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4353 Q67040-S4354 17n80c3	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819	PDF

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17N80C3 Price and Stock

Infineon Technologies AG SPB17N80C3ATMA1

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