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    17N80C Search Results

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    17N80C Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG SPW17N80C3FKSA1

    Trans MOSFET N-CH 800V 17A 3-Pin TO-247 Tube - Rail/Tube (Alt: SPW17N80C3FKSA1)
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    Infineon Technologies AG SPP17N80C3XKSA1

    Trans MOSFET N-CH 800V 17A 3-Pin TO-220 Tube - Rail/Tube (Alt: SPP17N80C3XKSA1)
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    Infineon Technologies AG SPA17N80C3XKSA1

    - Rail/Tube (Alt: SPA17N80C3XKSA1)
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    Infineon Technologies AG SPB17N80C3ATMA1

    Mosfet, N, To-263; |Infineon Technologies SPB17N80C3ATMA1
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    SPB17N80C3ATMA1 Cut Tape 1,739 1
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    Infineon Technologies AG SPB17N80C3ATMA1.

    Pwr Mosfet, N Channel, 800V, 17A; |Infineon Technologies SPB17N80C3ATMA1.
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    17N80C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    17N80C3

    Abstract: 17n80c 17n80 SPP17N80C3 SPB17N80C3
    Contextual Info: 17N80C3 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature New revolutionary high voltage technology Product Summary  Worldwide best R DS on in TO 220 VDS 800 V  Ultra low gate charge RDS(on) 290 m Periodic avalanche rated


    Original
    spp17n80c3spb17n80c3p-to263-3-2p-to220-3-1+4q67040-s435317n80c317n80c17n80 PDF

    17n80c3

    Abstract: SPA17 17n80
    Contextual Info: 17N80C3 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220-3-1 • Periodic avalanche rated


    Original
    spp17n80c3spa17n80c3pg-to-220-3-31p-to220-3-31+5pg-to220-3-31pg-to220-3-117n80c3spa1717n80 PDF

    17n80c3

    Abstract: 17n80 spa17n80c3 17N80C SPB17N80C3 UJ14 Q67040-S4441
    Contextual Info: Final data 17N80C3, 17N80C3 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 • Ultra low gate charge P-TO220-3-31 VDS 800 V RDS(on) 0.29 Ω ID 17 A P-TO263-3-2 P-TO220-3-1


    Original
    spp17n80c3spb17n80c3spa17n80c3p-to-220-3-31+8p-to220-3-1p-to263-3-2q67040-s435317n80c317n8017n80cuj14q67040-s4441 PDF

    MOSFET 17N80c3

    Abstract: 17n80
    Contextual Info: 17N80C3 CoolMOS Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original
    spp17n80c3pg-to220-317n80c3mosfet 17n80c3+117n80 PDF

    MOSFET 17N80c3

    Abstract: smd transistor marking d10 17n80c3 17N80C3 mosfet SPB17N80C3 640 smd transistor marking smd G47
    Contextual Info: 17N80C3 CoolMOS Power Transistor Product Summary Features • new revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 91 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original
    spb17n80c3pg-to26317n80c3mosfet 17n80c3+4smd transistor marking d1017n80c3 mosfet640 smd transistor markingsmd g47 PDF

    Contextual Info: 17N80C3 CoolMOS Power Transistor Product Summary Features • new revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 91 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original
    spb17n80c3pg-to26317n80c3 PDF

    17n80

    Abstract: 17n80c3 Q67040-S4359 to247 f SPW17N80C3 17n80c
    Contextual Info: 17N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original
    spw17n80c3p-to247q67040-s435917n80c3+317n80to247 f17n80c PDF

    17N80C3

    Abstract: SPP17N80C3 17n80 17n80c SPB17N80C3
    Contextual Info: 17N80C3 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 800 V RDS(on) 290 mΩ


    Original
    spp17n80c3spb17n80c3p-to263-3-2p-to220-3-1+4q67040-s435317n80c317n8017n80c PDF

    17n80

    Abstract: 17n80c SPW17N80C3A 17N80C3
    Contextual Info: 17N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original
    spw17n80c3p-to247q67040-s435917n80c3+317n8017n80cspw17n80c3a PDF

    17n80c3

    Abstract: 17n80 Q67040-s4354 17n80c Q67040-S4441 Q67040-S4353 spa17n80c3
    Contextual Info: Preliminary data 17N80C3, 17N80C3 17N80C3 Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge ID • Periodic avalanche rated


    Original
    spp17n80c3spb17n80c3spa17n80c3p-to220-3-31+8p-to263-3-2p-to220-3-117n80c317n80q67040-s435417n80cq67040-s4441q67040-s4353 PDF

    Contextual Info: 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original
    spb17n80c3pg-to263q67040-s435417n80c3 PDF

    17N80C3

    Contextual Info: 17N80C3 17N80C3 Cool MOS Power Transistor Feature VDS 800 V RDS on 0.29 Ω ID 17 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 PG-TO220-3-31 PG-TO220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original
    spp17n80c3spa17n80c3pg-to220-3-31pg-to220+4p-to220-3-31pg-to-220-3-31q67040-s435317n80c3 PDF

    17n80c3

    Contextual Info: 17N80C3 CoolMOS Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original
    spp17n80c3pg-to220-317n80c3 PDF

    17n80c3

    Abstract: UJ14
    Contextual Info: 17N80C3 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated


    Original
    spp17n80c3spa17n80c3pg-to-220-3-31p-to220-3-31+5pg-to220-3-31pg-to220q67040-s435317n80c3uj14 PDF

    SPW17N80C3 INFINEON

    Abstract: SPW17N80C3 17n80c
    Contextual Info: 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 247 • Ultra low gate charge VDS 800 V RDS(on) 0.29 Ω •=Periodic avalanche rated


    Original
    spw17n80c3p-to247q67040-s435917n80c3+2spw17n80c3 infineon17n80c PDF

    17n80

    Contextual Info: 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type


    Original
    spw17n80c3pg-to247q67040-s435917n80c3+117n80 PDF

    MOSFET 17N80c3

    Abstract: 17n80c3 17n80c 17n80 JESD22 SPW17N80C3
    Contextual Info: 17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original
    spw17n80c3pg-to247-317n80c3mosfet 17n80c3+317n80c17n80jesd22 PDF

    17n80c3

    Contextual Info: Final data 17N80C3, 17N80C3 17N80C3 Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge ID • Periodic avalanche rated


    Original
    spp17n80c3spb17n80c3spa17n80c3p-to220-3-31+4p-to263-3-2p-to220-3-1q67040-s435317n80c3 PDF

    MOSFET 17N80c3

    Abstract: Diode S17 DS800 PG-TO-247-3 SPW17N80C3 17n80c
    Contextual Info: 17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original
    spw17n80c3pg-to247-317n80c3mosfet 17n80c3+4diode s17ds800pg-to-247-317n80c PDF

    17n80c3

    Abstract: 17n80 SPA17N80C3 17n80c diode 400V 4A TO220 HEATSINK DATASHEET PG-TO220 SMD BR 17 PG-TO220-3-31 SPP17N80C3
    Contextual Info: 17N80C3 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated


    Original
    spp17n80c3spa17n80c3pg-to220-3-31pg-to220+9p-to220-3-31pg-to-220-3-31q67040-s435317n80c317n8017n80cdiode 400v 4ato220 heatsink datasheetsmd br 17 PDF

    MOSFET 17N80c3

    Abstract: 17n80 17n80c3 17n80c MOSFET 17N80c3 Data sheet JESD22 SPW17N80C3 spw17n80 PG-TO247-3
    Contextual Info: 17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original
    spw17n80c3pg-to247-317n80c3009-134-a+7o-247mosfet 17n80c317n8017n80cmosfet 17n80c3 data sheetjesd22spw17n80 PDF

    spa17n80c3

    Abstract: 17n80c3
    Contextual Info: 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 800 V RDS(on) 0.29 Ω •=Periodic avalanche rated


    Original
    spa17n80c3p-to220-3-3117n80c3q67040-s4441 PDF

    17n80c3

    Contextual Info: 17N80C3 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 800 V RDS(on) 0.29 Ω


    Original
    spp17n80c3spb17n80c3p-to263-3-2p-to220-3-1+3q67040-s4353q67040-s435417n80c3 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original
    b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819 PDF