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    04N60C Search Results

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    Infineon Technologies AG SPD04N60C3ATMA1

    Transistor: N-MOSFET; unipolar; 650V; 2.8A; Idm: 13.5A; 50W
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    TME SPD04N60C3ATMA1 2,500
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    Avnet Americas SPD04N60C3ATMA1 Tape & Reel 17,500 2,500
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    Mouser Electronics SPD04N60C3ATMA1 2,771
    • 1 $2.38
    • 10 $1.54
    • 100 $1.05
    • 1000 $0.81
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    Newark SPD04N60C3ATMA1 Bulk 362 1
    • 1 $2.19
    • 10 $1.41
    • 100 $0.96
    • 1000 $0.77
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    Rochester Electronics SPD04N60C3ATMA1 3,652 1
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    EBV Elektronik SPD04N60C3ATMA1 15 Weeks 2,500
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    Win Source Electronics SPD04N60C3ATMA1 50,490
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    • 1000 $0.77
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    Cyg Wayon Circuit Protection Co Ltd WMF04N60C2

    Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 4.6W; SOT223
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    TME WMF04N60C2 1
    • 1 $0.42
    • 10 $0.32
    • 100 $0.26
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    Richardson RFPD WMF04N60C2 2,500
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    Cyg Wayon Circuit Protection Co Ltd WMH04N60C2

    Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 29W; TO251S2
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    TME WMH04N60C2 1
    • 1 $0.53
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    Richardson RFPD WMH04N60C2 504
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    Cyg Wayon Circuit Protection Co Ltd WMP04N60C2

    Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 29W; TO251
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    TME WMP04N60C2 1
    • 1 $0.32
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    Richardson RFPD WMP04N60C2 480
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    Infineon Technologies AG SPP04N60C3HKSA1

    Trans MOSFET N-CH 650V 4.5A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: SPP04N60C3HKSA1)
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    Avnet Americas SPP04N60C3HKSA1 Tube 25 Weeks, 4 Days
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    Vyrian SPP04N60C3HKSA1 6,896
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    04N60C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    04N60C3

    Abstract: 04N60C 04N60 SPU04N60C3 P-TO252 SDP06S60 SPD04N60C3
    Contextual Info: 04N60C3 04N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • High peak current capability


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    spd04n60c3spu04n60c3p-to251p-to252+5q67040-s441204n60c304n60c04n60sdp06s60 PDF

    TEA1713

    Abstract: 6NK60 04N60C3 equivalent bs170 replacement 04n60c3 04n60c3 replacement TEA1523 diode zd201 KD366 k3934
    Contextual Info: AN10881 TEA1713 resonant power supply control IC with PFC Rev. 01 — 22 March 2010 Application note Document information Info Content Keywords TEA1713, PFC, burst mode, adapter, LCD TV, Plasma TV, resonant, converter. Abstract The TEA1713 integrates a controller for Power Factor Correction PFC


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    an10881tea17136nk6004n60c3 equivalent+7bs170 replacement04n60c304n60c3 replacementtea1523diode zd201kd366k3934 PDF

    04n60c3

    Abstract: 04N60C3 equivalent SPA04N60C3 04N60C GPT09301 SDP06S60 AN-TO220-3-31-01
    Contextual Info: 04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.95 Ω


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    spa04n60c3p-to220-3-31q67040-s441304n60c3+504n60c3 equivalent04n60cgpt09301sdp06s60an-to220-3-31-01 PDF

    04n60c3

    Abstract: 04N60C3 equivalent SPP04N60C3 04N60C SDP06S60 SPB04N60C3
    Contextual Info: 04N60C3 04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


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    spp04n60c3spb04n60c3p-to263-3-2p-to220-3-1+5q67040-s436604n60c304n60c3 equivalent04n60csdp06s60 PDF

    04N60C3 equivalent

    Abstract: 04n60c3 04N60C 04n60 IT 239 P-TO252 SDP06S60 SPD04N60C3 SPU04N60C3
    Contextual Info: 04N60C3 04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


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    spd04n60c3spu04n60c3p-to251p-to252+7q67040-s441204n60c304n60c3 equivalent04n60c04n60it 239sdp06s60 PDF

    04n60c2

    Abstract: 04N60C SPU04N60C2 Q67040-S4307 SPD04N60C2
    Contextual Info: 04N60C2 04N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V • Periodic avalanche rated RDS on 0.95 Ω • Extreme dv/dt rated ID 4.5 A • Ultra low effective capacitances


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    spd04n60c2spu04n60c2p-to251p-to252+4q67040-s4307q67040-s430604n60c204n60c PDF

    Contextual Info: 04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.95 Ω • Extreme dv/dt rated


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    spa04n60c3p-to220-3-3104n60c3q67040-s4413 PDF

    04n60c2

    Abstract: spp04n60c2 04N60C
    Contextual Info: Final data 04N60C2, 04N60C2 04N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A • Periodic avalanche rated • Extreme dv/dt rated


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    spp04n60c2spb04n60c2spa04n60c2p-to220-3-31+4p-to263-3-2p-to220-3-104n60c204n60c PDF

    04n60c3

    Abstract: 04N60C 04N60C3 equivalent 04N60 Q67040-S4407 SPA04N60C3 Q67040-S4366 SPB04N60C3 SPP04N60C3 SPB04N60C3 SMD
    Contextual Info: Final data 04N60C3, 04N60C3 04N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


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    spp04n60c3spb04n60c3spa04n60c3p-to220-3-31+10p-to263-3-2p-to220-3-1p-to-220-3-3104n60c304n60c04n60c3 equivalent04n60q67040-s4407q67040-s4366spb04n60c3 smd PDF

    04N60C3

    Abstract: smd transistor G18 04N60C3 equivalent 4V-20V 5304 marking code SPA04N60C3 SPB04N60C3 SPP04N60C3 04N60C
    Contextual Info: 04N60C3, 04N60C3 04N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


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    spp04n60c3spb04n60c3spa04n60c3p-to220-3-31+9p-to263-3-2p-to220-3-1p-to-220-3-3104n60c3smd transistor g1804n60c3 equivalent4v-20v5304 marking code04n60c PDF

    Contextual Info: AN10881 TEA1713 resonant power supply control IC with PFC Rev. 2 — 26 September 2011 Application note Document information Info Content Keywords TEA1713, adapter, LCD TV, Plasma TV, resonant, converter, PFC, Burst mode Abstract The TEA1713 integrates a controller for Power Factor Correction PFC


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    an10881tea1713 PDF

    TEA1613

    Abstract: TEA1713 04n60c3 LTV817B-S AN10907 TEA1623P ICE1PCS02 TEA1613T 04N60C3 equivalent mv silicon c320
    Contextual Info: AN10907 TEA1613T resonant power supply control IC Rev. 1 — 28 December 2010 Application note Document information Info Content Keywords TEA1613T, burst mode, adapter, LCD TV, plasma TV, resonant, converter. Abstract This application note discusses the TEA1613T application functions.


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    an10907tea1613ttea1613tea1713+604n60c3ltv817b-stea1623pice1pcs0204n60c3 equivalentmv silicon c320 PDF

    04n60c3

    Contextual Info: Preliminary data 04N60C3, 04N60C3 04N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax - V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A •=Periodic avalanche rated • Extreme dv/dt rated


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    spp04n60c3spb04n60c3spa04n60c3p-to220-3-31+4p-to263-3-2p-to220-3-1q67040-s436604n60c3 PDF

    04n60c2

    Abstract: Q67040-S4308 SPN04N60C2 VPS05163 720 TRANSISTOR smd sot-223 s4308 UA716 04n60
    Contextual Info: 04N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in SOT 223 VDS 600 V • Ultra low gate charge RDS(on) 0.95 Ω • Extreme dv/dt rated ID 0.8 A • Ultra low effective capacitances


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    spn04n60c2ot-223q67040-s4308vps05163+504n60c2720 transistor smd sot-223s4308ua71604n60 PDF

    04n60c3

    Abstract: 04N60C DSA0031699
    Contextual Info: 04N60C3 04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.95 Ω


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    spp04n60c3spb04n60c3p-to263-3-2p-to220-3-1+5q67040-s4366q67040-s440704n60c304n60cdsa0031699 PDF

    04n60c3

    Abstract: 04N60C3 equivalent Q67040-S4412 SPU04N60C3 FS - K - 1 - 0.95 - A - 40 04N60 P-TO252 SDP06S60 SPD04N60C3
    Contextual Info: 04N60C3 04N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge P-TO251 • Periodic avalanche rated P-TO252 • Extreme dv/dt rated • High peak current capability


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    spd04n60c3spu04n60c3p-to251p-to252+6q67040-s441204n60c304n60c3 equivalentfs - k - 1 - 0.95 - a - 4004n60sdp06s60 PDF

    04n60c2

    Abstract: UA716 SPA04N60C2 04N60C 04n60 AN-TO220-3-31-01 GPT09301 SDP06S60
    Contextual Info: Preliminary data 04N60C2 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated RDS on 0.95 Ω • Extreme dv/dt rated


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    spa04n60c2p-to220-3-31q67040-s433004n60c2+6ua71604n60c04n60an-to220-3-31-01gpt09301sdp06s60 PDF

    04N60C

    Contextual Info: 04N60C3 04N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.95 Ω • Extreme dv/dt rated ID 4.5 A • High peak current capability


    Original
    spd04n60c3spu04n60c3p-to251p-to252+3q67040-s441204n60c304n60c PDF

    SPD04N60C3

    Abstract: 04n60c3
    Contextual Info: 04N60C3 04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.95 Ω


    Original
    spd04n60c3spu04n60c3p-to251p-to252+2q67040-s441204n60c3 PDF

    04n60c3

    Contextual Info: 04N60C3 04N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO251 • Periodic avalanche rated PG-TO252 • Extreme dv/dt rated • High peak current capability


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    spd04n60c3spu04n60c3pg-to251pg-to252+2q67040-s441204n60c3 PDF

    04n60c3

    Abstract: 04N60C3 equivalent smd transistor G18 04n60 04N60C SPB04N60C3 SPA04N60C3 SPP04N60C3 transistor C 331
    Contextual Info: 04N60C3, 04N60C3 04N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


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    spp04n60c3spb04n60c3spa04n60c3p-to220-3-31+9p-to263-3-2p-to220-3-1p-to-220-3-3104n60c304n60c3 equivalentsmd transistor g1804n6004n60ctransistor c 331 PDF

    tea1716t

    Contextual Info: AN11179 TEA1716 resonant power supply control IC with PFC Rev. 1 — 9 January 2013 Application note Document information Info Content Keywords TEA1716, Power Factor Corrector PFC , LLC, burst mode operation, resonant, power converter Abstract The TEA1716 integrates a power factor corrector controller and a


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    an11179tea1716tea1716t PDF

    LP2920

    Contextual Info: AN11227 SSL4120 resonant power supply control IC with PFC Rev. 1 — 27 November 2012 Application note Document information Info Content Keywords SSL4120, converter, LED driver, lighting, resonant, converter, PFC, burst mode Abstract The SSL4120 integrates a controller for Power Factor Correction PFC


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    an11227ssl4120lp2920 PDF

    04n60c3

    Abstract: 04N60C 04N60 04N60C3 equivalent SPB04N60C3 SPA04N60C3 SPP04N60C3
    Contextual Info: Preliminary data 04N60C3, 04N60C3 04N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A • Periodic avalanche rated • Extreme dv/dt rated


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    spp04n60c3spb04n60c3spa04n60c3p-to220-3-31+7p-to263-3-2p-to220-3-1q67040-s436604n60c304n60c04n6004n60c3 equivalent PDF