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    SPB07N60C3 Search Results

    SPB07N60C3 Datasheets (6)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SPB07N60C3
    Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO263-3; VDS (max): 600.0 V; Package: D2PAK (TO-263); RDS(ON) @ TJ=25°C VGS=10: 600.0 mOhm; ID(max) @ TC=25°C: 7.3 A; IDpuls (max): 21.9 A; Original PDF 439.85KB 13
    SPB07N60C3
    Infineon Technologies Cool MOS Power Transistor Original PDF 313.89KB 14
    SPB07N60C3
    Infineon Technologies Cool MOS Power Transistor Original PDF 377.58KB 14
    SPB07N60C3
    Infineon Technologies Cool MOS Power Transistor Original PDF 152.96KB 15
    SPB07N60C3ATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 7.3A D2PAK Original PDF 433.21KB
    SPB07N60C3 SMD
    Infineon Technologies CoolMOS Power MOSFET, 600V, D2PAK, RDSon=0.60 ?, 7.3A Original PDF 192.12KB 14
    SF Impression Pixel

    SPB07N60C3 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG SPB07N60C3ATMA1

    Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) D2PAK T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical SPB07N60C3ATMA1 5,400 264
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    • 10000 $1.05
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    Rochester Electronics SPB07N60C3ATMA1 5,400 1
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    • 100 $1.14
    • 1000 $0.95
    • 10000 $0.84
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    Vyrian SPB07N60C3ATMA1 12,459
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    Infineon Technologies AG SPB07N60C3

    Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) D2PAK T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SPB07N60C3 255
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    SPB07N60C3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    07N60

    Abstract: 07N60C3
    Contextual Info: Final data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated • Extreme dv/dt rated


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    spp07n60c3spb07n60c3spi07n60c3spa07n60c3+6p-to220-3-31p-to262-3-1p-to263-3-2p-to220-3-107n6007n60c3 PDF

    07N60C3

    Contextual Info: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on


    Original
    spp07n60c3spb07n60c3spi07n60c3p-to262-3-1+4p-to263-3-2p-to220-3-1q67040-s442207n60c3 PDF

    smd marking g12

    Contextual Info: SPB07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 • Extreme dv/dt rated • High peak current capability


    Original
    spb07n60c3p-to263-3-207n60c3q67040-s4394+1smd marking g12 PDF

    07N60C3

    Abstract: 07n60c
    Contextual Info: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original
    spp07n60c3spb07n60c3spi07n60c3spa07n60c3+7p-to220-3-31p-to262-3-1p-to263-3-2p-to220-3-1p-to-220-3-3107n60c307n60c PDF

    07N60C3

    Contextual Info: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2


    Original
    spp07n60c3spb07n60c3spi07n60c3spa07n60c3+5p-to220-3-31p-to262-3-1p-to263-3-2p-to220-3-107n60c3 PDF

    07n60c3

    Abstract: 07N60C3 SMD
    Contextual Info: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated


    Original
    spp07n60c3spb07n60c3spi07n60c3spa07n60c3+6p-to220-3-31p-to262-3-1p-to263-3-2p-to220-3-107n60c307n60c3 smd PDF

    07N60C3

    Abstract: 07n60c 07n60
    Contextual Info: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on


    Original
    spp07n60c3spb07n60c3spi07n60c3p-to262-3-1+5p-to263-3-2p-to220-3-107n60c307n60c07n60 PDF

    Contextual Info: SPB07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability


    Original
    spb07n60c3pg-to263q67040-s439407n60c3 PDF

    07N60C3

    Abstract: SPB07N60C3 07n60c transistor 07n60c3 SPA07N60C3 SPI07N60C3 SPP07N60C3
    Contextual Info: Final data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original
    spp07n60c3spb07n60c3spi07n60c3spa07n60c3+8p-to220-3-31p-to262-3-1p-to263-3-2p-to220-3-1p-to-220-3-3107n60c307n60ctransistor 07n60c3 PDF

    07n60c3

    Abstract: 07n60c SPB07N60C3 SPA07N60C3 SPI07N60C3 SPP07N60C3 smd transistor marking G12
    Contextual Info: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original
    spp07n60c3spb07n60c3spi07n60c3spa07n60c3+8p-to220-3-31p-to262-3-1p-to263-3-2p-to220-3-1p-to-220-3-3107n60c307n60csmd transistor marking g12 PDF

    07N60C3

    Abstract: 07N60 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
    Contextual Info: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated


    Original
    spp07n60c3spb07n60c3spi07n60c3spa07n60c3+7p-to220-3-31p-to262-3-1p-to263-3-2p-to220-3-107n60c307n6007n60c PDF

    07N60C3 equivalent

    Abstract: 07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
    Contextual Info: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax


    Original
    spp07n60c3spb07n60c3spi07n60c3p-to262-3-1+5p-to263-3-2p-to220-3-1q67040-s442207n60c307n60c3 equivalent PDF

    Contextual Info: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.6 Ω •=Periodic avalanche rated ID


    Original
    spp07n60c3spb07n60c3spi07n60c3spa07n60c3+4p-to220-3-31p-to262-3-1p-to263-3-2p-to220-3-1 PDF

    07n60c3

    Abstract: 07N60C3 equivalent PG-TO263-3-2 SDP06S60 SPB07N60C3 SPP07N60C3
    Contextual Info: SPB07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • High peak current capability


    Original
    spb07n60c3pg-to263q67040-s439407n60c3+407n60c3 equivalentpg-to263-3-2sdp06s60spp07n60c3 PDF

    07N60C3

    Abstract: AN-TO220-3-31-01
    Contextual Info: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original
    spp07n60c3spb07n60c3spi07n60c3spa07n60c3+7p-to220-3-31p-to262-3-1p-to263-3-2p-to220-3-1p-to-220-3-3107n60c3an-to220-3-31-01 PDF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


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    2002-sepstr-g6551str-f6654g6551+7tda16822str-f6653strg6551igbt cross referenceka5m0565rtop224y equivalentbup 312 PDF

    smd TRANSISTOR sot-23 a7

    Abstract: 07N60 200w power amplifier PCB layout 230 AC to 5V smps ic 3525 bc817 optocoupler TDA 6275 TDA 200W 07n60 mosfet circuit diagrams TDA 4100 tda168886
    Contextual Info: Version 1.0 , September 2004 Application Note AN-CoolMOS-09 200W SMPS Demonstration Board II Author: Marko Scherf, Wolfgang Frank Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g 200W SMPS Demonstration Board II


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    an-coolmos-09tda168881x20/90ismd transistor sot-23 a7+907n60200w power amplifier pcb layout230 ac to 5v smps ic 3525bc817 optocouplertda 6275tda 200w07n60 mosfet circuit diagramstda 4100tda168886 PDF

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


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    igbt welding machine schemeikw40n120h3aircon l1smd diode schottky code marking sj+6transistor marking code 12w sot-2324v application with ice3ar0680jzinduction cooker fault findingipw65r041igw40n60h3spw55n80c3 PDF

    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


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    infineo866-95b152-h8926-g2-x-7600nb08-10693bs02+92bs0108p06ptda 16888ice2pcs02tda16846ice3b1565jmosfet 18p06ptda4605ice3b0365j PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    gp-20fsq510 equivalentbta12 6008bta16 6008+7zigbee interface with avr atmega16precision triac control thermostatthyristor t 558 f eupecgw 5819 diodetransistor a564a564 transistorbsm25gp120 b2 PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    ao4405ao4407ao4408ao4409+16ao4410ao4411ao4413ao4415ao4422ao4700irf1830girf1830transistor irf1830gapm2054n equivalentapm2054nap85l02hap70n03s2sk3683ap70l02h2sk2696 PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


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    lead519b152-h9345-g2-x-7600px3544px7510+8px3560ice2as01 equivalentpx3540primarion px3540ice3br0665jprimarion px3560ice3br4765ice3br1765j PDF

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Contextual Info: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


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    b192-h6780-g11-x-7600sp000008186vdsl6100i-e600v igbt dc to dc buck converter+9transistor smd code package sot89bts 2140 1b data sheettransistor smd code package sot23psb 6970 hl v1.3pef 24628 e v1.2-ginfineon psb 6970pef 4265 t v2.1ht 1200-4slb 9635 PDF

    ICE3B0365J

    Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
    Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)


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    spp21n50c3spa21n50c3spi21n50c3spp16n50c3+16spa16n50c3spi16n50c3spw21n50c3spp12n50c3spa12n50c3spi12n50c3ice3b0365jice3br4765jtda16888ice2a765p2ice2pcs01gice1pcs02gice2b0565ice1pcs02ice2pcs02ipi60r099cp PDF