07N60 Search Results

07N60S5

Abstract: P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5
Contextual Info: 07N60S5 07N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06

07n60c3

Abstract: 07N60C3 equivalent s4409 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
Contextual Info: 07N60C3, 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2

SPI07N60S5

Abstract: 07N60S5 SPPX3N60S5
Contextual Info: 07N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation: G,1

SPA07N60C3

Abstract: Q67040-S4409 07n60c3 AN-TO220-3-31-01 GPT09301 SDP06S60
Contextual Info: 07N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.6 Ω •=Periodic avalanche rated

07N60C2

Abstract: SPA07N60C2 2-S10 AN-TO220-3-31-01 GPT09301 SDP06S60 Q67040-S4331
Contextual Info: Preliminary data 07N60C2 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated RDS on 0.6 Ω • Extreme dv/dt rated

07n60s5

Abstract: SPI07N60S5 SPP07N60S5 Q67040-S4328
Contextual Info: 07N60S5 07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO262 • Ultra low gate charge PG-TO220 • Periodic avalanche rated 2 • Extreme dv/dt rated

07N60C3

Abstract: Q67040-S4423
Contextual Info: 07N60C3 07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 P-TO251-3-1 • Ultra low gate charge P-TO252-3-1

transistor 07n60s5

Abstract: 07n60s5 infineon 07n60s5
Contextual Info: 07N60S5, 07N60S5 07N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS on in TO 220 • Ultra low gate charge P-TO262 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO263-3-2 P-TO220-3-1

Contextual Info: 07N60C3 07N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 • Ultra low gate charge P-TO251-3-1 P-TO252-3-1

07N60CFD

Abstract: p9080 SPW07N60CFD 83 diode
Contextual Info: 07N60CFD CoolMOSTM Power Transistor Product Summary Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge V DS @Tjmax 650 V R DS on ,max 0.7 Ω ID 6.6 A • Ultra low gate charge • Extreme dv /dt rated PG-TO247 • High peak current capability

07N60C3

Contextual Info: 07N60C3 07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 P-TO251-3-1 • Ultra low gate charge P-TO252-3-1

07N60C3

Abstract: AN-TO220-3-31-01
Contextual Info: 07N60C3, 07N60C3 07N60C3, 07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1

07n60c3

Abstract: 07N60
Contextual Info: 07N60C3 07N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary •=Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge

Contextual Info: 07N60CFD CoolMOSTM Power Transistor Product Summary Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge V DS @Tjmax 650 V R DS on ,max 0.7 Ω ID 6.6 A • Ultra low gate charge • Extreme dv /dt rated PG-TO220FP • High peak current capability

07n60c3

Abstract: 07N60C3 equivalent to220 pcb footprint SPA07N60C3 07N60 SPI07N60C3 PG-TO220 PG-TO220-3 smd transistor marking br SPP07N60C3
Contextual Info: 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated

Contextual Info: 07N60S5 07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO262 • Ultra low gate charge PG-TO220 • Periodic avalanche rated 2 • Extreme dv/dt rated

07N60S5

Abstract: infineon 07n60s5 SPB07N60S5 SPP07N60S5
Contextual Info: 07N60S5 07N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:

07N60CFD

Abstract: 07N60C 07N60 JESD22 SPW07N60CFD spw07n
Contextual Info: 07N60CFD CoolMOSTM Power Transistor Product Summary Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge V DS @Tjmax 650 V R DS on ,max 0.7 Ω ID 6.6 A • Ultra low gate charge • Extreme dv /dt rated PG-TO247 • High peak current capability