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    SPD07N60 Search Results

    SPD07N60 Datasheets (12)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SPD07N60C2
    Infineon Technologies Cool MOS Power Transistor Original PDF 141.08KB 11
    SPD07N60C2
    Infineon Technologies CoolMOS Power MOSFET, 600V, DPAK, RDSon=0.60 ?, 7.3A Original PDF 169.57KB 12
    SPD07N60C3
    Infineon Technologies CoolMOS Power MOSFET, 600V, DPAK, RDSon=0.60 ?, 7.3A Original PDF 172.67KB 13
    SPD07N60C3
    Infineon Technologies Cool MOS Power Transistor Original PDF 290.33KB 12
    SPD07N60C3ATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY Original PDF 928.86KB
    SPD07N60C3BTMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 7.3A DPAK Original PDF 928.86KB
    SPD07N60C3T
    Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 7.3A DPAK Original PDF 13
    SPD07N60S5
    Infineon Technologies Cool MOS Power Transistor Original PDF 267.42KB 11
    SPD07N60S5
    Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO252-3; VDS (max): 600.0 V; Package: DPAK (TO-252); RDS(ON) @ TJ=25°C VGS=10: 600.0 mOhm; ID(max) @ TC=25°C: 7.3 A; IDpuls (max): 14.6 A; Original PDF 736.63KB 12
    SPD07N60S5
    Infineon Technologies CoolMOS Power MOSFET, 600V, DPAK, RDSon=0.60 ?, 7.3A Original PDF 120.46KB 9
    SPD07N60S5
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    SPD07N60S5T
    Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 7.3A DPAK Original PDF 12
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    SPD07N60 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG SPD07N60C3BTMA1

    SPD07N60C3BTMA1 Infineon Technologies AG Transistors MOSFETs N-CH 600V 7.3A 3-Pin(2+Tab) DPAK T/R - Arrow.com
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    Verical SPD07N60C3BTMA1 8,679 172
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    Quest Components SPD07N60C3BTMA1 80
    • 1 $3.36
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    • 100 $1.26
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    Rochester Electronics SPD07N60C3BTMA1 8,679 1
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    • 100 $1.75
    • 1000 $1.56
    • 10000 $1.47
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    Infineon Technologies AG SPD07N60C3ATMA1

    Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) DPAK T/R
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    Verical () SPD07N60C3ATMA1 7,500 233
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    SPD07N60C3ATMA1 2,500 2,500
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    SPD07N60C3ATMA1 2,500 2,500
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    SPD07N60C3ATMA1 2,500 233
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    SPD07N60C3ATMA1 758 233
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    Avnet Americas SPD07N60C3ATMA1 Tape & Reel 2,500
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    Arrow Electronics () SPD07N60C3ATMA1 2,500 8 Weeks 2,500
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    SPD07N60C3ATMA1 2,500 42 Weeks 2,500
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    Newark () SPD07N60C3ATMA1 Tape & Reel 792 100
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    SPD07N60C3ATMA1 Cut Tape 792 1
    • 1 $3.09
    • 10 $3.09
    • 100 $1.39
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    Rochester Electronics SPD07N60C3ATMA1 10,758 1
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    TME SPD07N60C3ATMA1 2,500
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    EBV Elektronik SPD07N60C3ATMA1 9 Weeks 2,500
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    Infineon Technologies AG SPD07N60C2

    7.3 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SPD07N60C2 761
    • 1 $1.64
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    • 100 $1.64
    • 1000 $0.75
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    Infineon Technologies AG SPD07N60S5BTMA1

    MOSFET N-Channel 600V 7.3A (Tc) TO-252-3 T/R
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    Rochester Electronics SPD07N60S5BTMA1 336 1
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    EBV Elektronik SPD07N60S5BTMA1 21 Weeks 1
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    Vyrian SPD07N60S5BTMA1 12,111
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    Infineon Technologies AG SPD07N60S5A

    COOL MOS POWER TRANSISTOR Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SPD07N60S5A 45,500
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    SPD07N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    07N60S5

    Abstract: P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5
    Contextual Info: SPU07N60S5 SPD07N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity


    Original
    spu07n60s5spd07n60s5o-251o-252+5spux3n60s5/spdx3n60s5p-to251-3-107n60s5q67040-s4196p-to252 PDF

    07n60c2

    Abstract: TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent P-TO252 SDP06S60 SPD07N60C2
    Contextual Info: SPD07N60C2 SPU07N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Product Summary VDS 600 V Ultra low gate charge R DS(on)


    Original
    spd07n60c2spu07n60c2o-251o-252+11p-to251p-to252q67040-s431207n60c2transistor smd marking code 12wsmd transistor marking 12wtransistor smd 12wsmd transistor 12w 98smd transistor code 12w07n60c2 equivalentsdp06s60 PDF

    Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252. • Ultra low gate charge • Periodic avalanche rated PG-TO251.


    Original
    spu07n60s5spd07n60s5o-251o-252+2pg-to252pg-to251 PDF

    07N60S5

    Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251


    Original
    spu07n60s5spd07n60s5o-251o-252+3pg-to252pg-to25107n60s5 PDF

    07n60s5

    Abstract: P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5 transistor 07n60s5
    Contextual Info: SPU07N60S5 SPD07N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO252 • Ultra low gate charge P-TO251-3-1 • Periodic avalanche rated


    Original
    spu07n60s5spd07n60s5o-251o-252+5p-to252p-to251-3-1q67040-s419607n60s5transistor 07n60s5 PDF

    Contextual Info: SIEMENS SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • W orldw ide best Ros on in TO-251 and TO -252 • Ultra low gate charge • Periodic avalanche proved • Extrem e d v/d t rated • O ptim ized capacitances


    OCR Scan
    spu07n60s5spd07n60s5o-251p-t0251+307n60s5q67040-s4196p-t0252 PDF

    Q67040-S4423

    Abstract: 07N60 07N60C3 380v SPD07N60C3 SPD07N60 P-TO251-3-1 SDP06S60 SPU07N60C3
    Contextual Info: SPD07N60C3 SPU07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 P-TO251-3-1 • Ultra low gate charge P-TO252-3-1


    Original
    spd07n60c3spu07n60c3o-251o-252+8p-to251-3-1p-to252-3-1q67040-s442307n60c307n60380vspd07n60sdp06s60 PDF

    07N60C3

    Abstract: Q67040-S4423 SPD07N60C3 P-TO251-3-1 SDP06S60 SPU07N60C3
    Contextual Info: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original
    spd07n60c3spu07n60c3p-to251-3-1p-to252-3-1+3q67040-s442307n60c3sdp06s60 PDF

    Q67040-S4186

    Contextual Info: SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS Power Semiconductors • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated


    Original
    spu07n60s5spd07n60s5o-251o-252+5spux3n60s5/spdx3n60s5p-to251-3-1p-to25207n60s5q67040-s4186 PDF

    Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO252. • Ultra low gate charge • Periodic avalanche rated P-TO251.


    Original
    spu07n60s5spd07n60s5o-251o-252+2p-to252p-to251 PDF

    AR4100

    Abstract: Q67040-S4423
    Contextual Info: SPD07N60C3 SPU07N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated


    Original
    spd07n60c3spu07n60c3o-251o-252+4p-to251-3-1p-to252-3-1ar4100q67040-s4423 PDF

    Contextual Info: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated


    Original
    spd07n60c3spu07n60c3o-251o-252+2p-to251-3-1p-to252-3-1 PDF

    07n60c3

    Abstract: 07n60c AR4100
    Contextual Info: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated


    Original
    spd07n60c3spu07n60c3o-251o-252+5p-to251-3-1p-to252-3-107n60c307n60car4100 PDF

    infineon 07n60s5

    Abstract: 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5
    Contextual Info: SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated


    Original
    spu07n60s5spd07n60s5o-251o-252+6p-to252p-to251-3-1spux3n60s5/spdx3n60s5q67040-s4196infineon 07n60s507n60s5 PDF

    07N60C2

    Abstract: 07N60 P-TO252 SDP06S60 SPD07N60C2 SPU07N60C2 Q67040-S4311 smd transistor code 622
    Contextual Info: SPD07N60C2 SPU07N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO-251 and TO-252 • Ultra low gate charge VDS 600 V RDS(on) 0.6 Ω • Periodic avalanche rated


    Original
    spd07n60c2spu07n60c2o-251o-252+8p-to251p-to252q67040-s431207n60c207n60sdp06s60q67040-s4311smd transistor code 622 PDF

    07n60s5

    Abstract: SPD07N60S5 SPU07N60S5 Q67040-S4186
    Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251


    Original
    spu07n60s5spd07n60s5o-251o-252+5pg-to252pg-to251q67040-s419607n60s5q67040-s4186 PDF

    07n60s5

    Abstract: TO-251 footprint TO252-3 rthjc SPD07N60S5 SPU07N60S5
    Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251


    Original
    spu07n60s5spd07n60s5o-251o-252+6pg-to252pg-to251q67040-s419607n60s5to-251 footprintto252-3 rthjc PDF

    SPU07N60S5

    Abstract: Q67040-S4186 07n60s5 infineon 07n60s5
    Contextual Info: SPU07N60S5 SPD07N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS(on) 0.6


    Original
    spu07n60s5spd07n60s5o-251o-252+5p-to252p-to251-3-1q67040-s418607n60s5infineon 07n60s5 PDF

    07N60C2

    Abstract: Q67040-S4311 A2206
    Contextual Info: SPD07N60C2 SPU07N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO-251 and TO-252 • Ultra low gate charge VDS 600 V RDS(on) 0.6 Ω • Periodic avalanche rated


    Original
    spd07n60c2spu07n60c2o-251o-252+5p-to251p-to25207n60c2q67040-s4311a2206 PDF

    07N60

    Abstract: 07N60S5
    Contextual Info: SPU07N60S5 SPD07N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 • Ultra low gate charge VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO252 P-TO251-3-1 • Periodic avalanche rated


    Original
    spu07n60s5spd07n60s5p-to252o-251+4o-252p-to251-3-107n6007n60s5 PDF

    07N60C3

    Abstract: Q67040-S4423
    Contextual Info: SPD07N60C3 SPU07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 P-TO251-3-1 • Ultra low gate charge P-TO252-3-1


    Original
    spd07n60c3spu07n60c3p-to251-3-1o-251+4o-252p-to252-3-107n60c3q67040-s4423 PDF

    Contextual Info: SPD07N60C3 SPU07N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 • Ultra low gate charge P-TO251-3-1 P-TO252-3-1


    Original
    spd07n60c3spu07n60c3p-to251-3-1o-251+2o-252p-to252-3-1 PDF

    07N60C3

    Contextual Info: SPD07N60C3 SPU07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 P-TO251-3-1 • Ultra low gate charge P-TO252-3-1


    Original
    spd07n60c3spu07n60c3p-to251-3-1o-251+3o-252p-to252-3-107n60c3 PDF

    07n60c3

    Abstract: 07N60
    Contextual Info: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary •=Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge


    Original
    spd07n60c3spu07n60c3o-251o-252+4p-to251-3-1p-to252-3-107n60c307n60 PDF